journal article·2006-12

Sol–gel synthesis of sub-50 nm ZnO nanowires on pulse laser deposited ZnO thin films

Chang Hyun Bae, Seung Min Park, Seung-Eon Ahn, Dong-Jin Oh, Gyu Tae Kim, Jeong Sook Ha

Applied Surface Science· Volume 253· Issue 4
Publisher page

Abstract

A simple synthesis route to high-quality sub-50 nm ZnO nanowires is reported, utilizing ZnO thin films grown by pulse laser deposition (PLD) as seed layers. Depending upon the PLD growth conditions, the surface morphology of the ZnO nanowires on ZnO film was distinctively different whereas the diameters were almost the same. With the increase of the concentration of zinc nitrate/methenamine solution from 0.002 to 0.02 M, the average diameter of the ZnO nanowire increased but remained sub-50 nm. The grown ZnO nanowires showed a high crystallinity with a low defect density confirmed by a sharp photoluminescence spectrum.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. Huang · Adv. Mater. · 2001 · 13 · 11310.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H ↗
2. Saito · Adv. Mater. · 2002 · 14 · 41810.1002/1521-4095(20020318)14:6<418::AID-ADMA418>3.0.CO;2-K ↗
3. Rao · Sens. Actuators B · 1999 · 55 · 16610.1016/S0925-4005(99)00049-0 ↗
4. Minami · MRS Bull. · 2000 · 25 · 3810.1557/mrs2000.149 ↗
5. Sousa · Int. J. Inorg. Mater. · 1999 · 1 · 23510.1016/S1466-6049(99)00036-7 ↗
6. Agarwal · J. Electrochem. Soc. · 1998 · 145 · 292010.1149/1.1838737 ↗
7. Quaranta · J. Appl. Phys. · 1993 · 74 · 24410.1063/1.354152 ↗
9. Kong · Appl. Phys. Lett. · 2001 · 78 · 40710.1063/1.1342050 ↗
10. Huang · Science · 2001 · 292 · 189710.1126/science.1060367 ↗
11. Wu · J. Phys. Chem. B · 2002 · 106 · 954610.1021/jp025969j ↗
12. Park · Appl. Phys. Lett. · 2002 · 80 · 423210.1063/1.1482800 ↗
13. Vayssieres · J. Phys. Chem. B · 2001 · 105 · 335010.1021/jp010026s ↗
14. Vayssieres · Adv. Mater. · 2003 · 15 · 46410.1002/adma.200390108 ↗