A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film
Source abstract
Abstract
Abstract VO 2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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