Patterning of amorphous and polycrystalline Ni78B14Si8 with a focused-ion-beam
Source abstract
Abstract
Abstract The machining response of amorphous and crystalline Ni 78 B 14 Si 8 was investigated when structuring substrates using focused-ion-beam (FIB) milling. In particular, the sputtering yield as a function of the scan speed, and the effects of ion fluence and scan speed on the milled depth were studied. The ion fluence dependent evolution of the cross-sectional profiles of trenches was examined by atomic force microscopy (AFM). When milling amorphous Ni 78 B 14 Si 8 , it was found that the sputtering yield first decreased with increasing the beam scan speed, then kept constant within the scan speed range, up to 710 nm/s, investigated in this work; it was also found that the milled depth was almost proportional to the ion beam fluence. The patterning of polycrystalline Ni 78 B 14 Si 8 resulted in anisotropic milling-rates due to the varying orientation of the grains in the material. The analysis of the profile evolution in both materials indicated that the surface finish of trenches was scan speed, ion beam fluence and scan strategy dependent. The study demonstrated that direct patterning by FIB could be used for producing masters in amorphous Ni-based alloys for injection moulding and hot embossing.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. Kundig · Microelectron. Eng. · 2003 · 67 · 40510.1016/S0167-9317(03)00096-0 ↗
2. Prakash · Tribol. Lett. · 2000 · 8 · 15310.1023/A:1019191303146 ↗
3. Taniguchi · 1996
4. Ektessab · Rev. Sci. Instrum. · 2000 · 71 · 101210.1063/1.1150375 ↗
5. Schubart · Model. Simul. Mater. Sci. Eng. · 1997 · 5 · 7910.1088/0965-0393/5/1/006 ↗
6. Chen · Jpn. J. Appl. Phys. · 2002 · 41 · 309910.1143/JJAP.41.3099 ↗
7. Ochiai · J. Vac. Sci. Technol. B · 2001 · 19 · 93310.1116/1.1349205 ↗
8. Lee · Opt. Eng. · 2002 · 41 · 74210.1117/1.1461833 ↗
9. Longo · Appl. Phys. Lett. · 2001 · 78 · 98110.1063/1.1348308 ↗
10. Langford · J. Vac. Sci. Technol. A · 2001 · 19 · 98210.1116/1.1368198 ↗
11. Li · Appl. Phys. Lett. · 2005 · 87 · 12311310.1063/1.2051798 ↗
12. Stanishevsky · J. Vac. Sci. Technol. B · 2003 · 21 · 306710.1116/1.1624253 ↗
13. Tarumi · Appl. Phys. Lett. · 2002 · 81 · 461010.1063/1.1526922 ↗
14. Oliviero · J. Appl. Phys. · 2001 · 90 · 171810.1063/1.1385576 ↗
15. Huang · Phys. Rev. B · 1999 · 59 · 386210.1103/PhysRevB.59.3862 ↗
16. Menzel · J. Appl. Phys. · 2000 · 88 · 565810.1063/1.1319168 ↗
17. Adams · J. Vac. Sci. Technol. B · 2006 · 24 · 176610.1116/1.2210000 ↗
18. Ivkov · J. Phys. : Condens. Matter · 1989 · 1 · 55110.1088/0953-8984/1/3/006 ↗
19. Steckl · J. Vac. Sci. Technol. B · 1999 · 17 · 36210.1116/1.590564 ↗
20. Driesel · Phys. Status Solidi A · 1994 · 146
21. Santamore · J. Vac. Sci. Technol. B · 1997 · 15
22. Muller · Proc. SPIE · 1990 · 1263
23. W. Li, G. Lalev, S. Dimov, H. Zhao, D. T. Pham, Appl. Surf. Sci. (2006) in press.
24. Platzgummer · Microelectron. Eng. · 2006 · 83 · 93610.1016/j.mee.2006.01.140 ↗
25. Flierl · MRS Internet J. Nitride Semiconduct. Res. · 1999 · 4S1 · G6.57
26. Lugstein · J. Appl. Phys. · 2002 · 92 · 403710.1063/1.1505685 ↗
27. Xiong · Appl. Phys. Lett. · 2001 · 79 · 346110.1063/1.1419032 ↗
28. Huey · Nanotechnology · 2003 · 14 · 40910.1088/0957-4484/14/3/310 ↗
29. Fu · Opt. Eng. · 2003 · 42 · 221410.1117/1.1588659 ↗
30. Fu · Int J. Adv. Manuf. Technol. · 2001 · 17 · 83510.1007/s001700170111 ↗
31. Xie · Nucl. Instrum. Mech. Phys. Res. B · 2003 · 211 · 36310.1016/S0168-583X(03)01412-5 ↗