Phosphorous doped Ru film for advanced Cu diffusion barriers
Source abstract
Abstract
Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and interfaces · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
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