A new crystallization technique of Si films on glass substrate using thermal plasma jet

We have proposed a new crystallization technique of Si films on glass substrates using thermal plasma jet, and studied the crystallization of hydrogenated amorphous Si (a-Si:H) films as functions of the input power to the plasma source and the scanning speed of the substrate. Within the proper conditions of the input power and the scanning speed for the crystallization of Si films, higher input power and slower scanning speed lead to higher crystallinity. This technique enables as to crystallize Si films uniformly in the thickness even for the films as thick as ∼1 μm.