Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach

Abstract Ge2Sb2Te5 (GST) is one of the most promising chalcogenide materials for phase-change memory devices, which are potential candidates for the future generation of non-volatile memories. The goal of this work was to investigate the inter-diffusion properties of the Ti–GST system upon annealing, by means of ToF-SIMS depth profile characterization. A double stack (Ti–GST–Ti) and a single stack (Ti–GST) have been considered, both as virgin samples (as-deposited) and post-annealed at 673 K for 10 s in pure N2 atmosphere. Two basic results have been found: (a) the annealed sample looked clearly affected by Ti diffusion throughout the whole GST layer; (b) the initial GST layer composition was dramatically altered as Te diffused as well as reacted with Ti, forming a Ti–Te compound (most likely as Te2Ti). As a consequence, pronounced inter-diffusion of Ti and Te has been observed, resulting in a substantial reduction of the Te content of the original GST layer.