Reliability improvement of Ge2Sb2Te5-based phase-change memory devices with increased post annealing time
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OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Liquid Crystal Research Advancements
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References (65)
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1. Phase change memory technology10.1116/1.3301579 ↗
2. Recent progress in phase-change memory technology10.1109/JETCAS.2016.2547718 ↗
3. An overview of phase-change memory device physics10.1088/1361-6463/ab7794 ↗
4. “A phase-change memory model for neuromorphic computing”10.1063/1.5042408 ↗
5. M. Suri et al., “Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction,” in 2011 International Electron Devices Meeting, 2011: IEEE, pp. 4.4. 1-4.4. 4.10.1109/IEDM.2011.6131488 ↗
6. Recent advances on neuromorphic devices based on chalcogenide phase‐change materials10.1002/adfm.202003419 ↗
7. G. W. Burr et al., “Access devices for 3D crosspoint memory,” Journal of Vacuum Science & Technology B, vol. 32, no. 4, 2014.10.1116/1.4889999 ↗
8. 3D cross-point phase-change memory for storage-class memory10.1088/1361-6463/ab39a0 ↗
9. Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance10.1021/acsnano.9b04233 ↗
10. Ovonic threshold switching selectors for three-dimensional stackable phase-change memory10.1557/mrs.2019.206 ↗
11. Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM10.1038/am.2015.49 ↗
12. In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te510.1039/D0NA00223B ↗
13. In situ thermal behavior of resistance drift in GeTe and Ge2Sb2Te5 nanowires via Raman thermometry10.1039/D0TC00781A ↗
14. Phase-change heterostructure enables ultralow noise and drift for memory operation10.1126/science.aay0291 ↗
15. The promise of phase-change materials10.1126/science.aaz1129 ↗
16. Crystallization properties of arsenic doped GST alloys10.1038/s41598-019-49168-z ↗
17. Interfacial phase-change memory10.1038/nnano.2011.96 ↗
18. Ni-doped GST materials for high speed phase change memory applications10.1016/j.materresbull.2015.01.016 ↗
19. The myth of “Metavalency” in phase‐change materials10.1002/adma.202300836 ↗
20. Switching to hidden metallic crystal phase in phase-change materials by photoenhanced metavalent bonding10.1021/acsnano.1c07100 ↗
21. Metavalent bonding in layered phase‐change memory materials10.1002/advs.202370094 ↗
22. Chen · 2006 · 97
23. GeTe phase change material and Ti based electrode: study of thermal stability and adhesion10.1016/j.mee.2010.07.032 ↗
24. D. Mandelli, S. Caravati, and M. Bernasconi, “Density functional study of the TiN/Ge2Sb2Te5 interface,” physica status solidi (b), vol. 249, no. 11, pp. 2140-2144, 2012.10.1002/pssb.201248290 ↗
25. Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory10.3390/mi10050281 ↗
26. Use of a Ti buffer layer to improve the mechanical properties of Ge2Sb2Te5 thin films for phase-change memory10.1007/s11837-020-04043-5 ↗
27. Cinkaya · 2020 · 1
28. An experimental study of Ge diffusion through Ge2Sb2Te510.1016/j.mssp.2022.107101 ↗
29. A comparison of Ge, Sb and Te thermal diffusion through Ge2Sb2Te510.1016/j.mssp.2023.107644 ↗
30. Temperature-dependent phase separation during annealing of Ge2Sb2Te5 thin films in vacuum10.1016/j.apsusc.2012.03.005 ↗
31. “Effects of carbon concentration on the local atomic structure of amorphous GST10.1063/5.0203532 ↗
32. Understanding phase-change behaviors of carbon-doped Ge2Sb2Te5 for phase-change memory application10.1021/am503502q ↗
33. Electronic mechanism for resistance drift in phase-change memory materials: link to persistent photoconductivity10.1088/1361-6463/ab795e ↗
34. “Fundamental drift of parameters in chalcogenide phase change memory”10.1063/1.2825650 ↗
35. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials10.1109/TED.2004.825805 ↗
36. Statistics of resistance drift due to structural relaxation in phase-change memory arrays10.1109/TED.2010.2058771 ↗
37. “A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5,”10.1063/1.3109063 ↗
38. Ielmini · 2007 · 939
39. Ielmini · 2008 · 597
40. Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part I: experimental study10.1109/TED.2009.2016397 ↗
41. “Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories10.1063/1.3664631 ↗
42. Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films10.1088/0256-307X/21/6/046 ↗
43. The crystallization behavior of amorphous Ge2Sb2Te5 films induced by a multi-pulsed nanosecond laser10.1088/1361-6641/aa7c4e ↗
44. J. Xu, C. Qi, L. Chen, L. Zheng, and Q. Xie, “The microstructural changes of Ge2Sb2Te5 thin film during crystallization process,” AIP Advances, vol. 8, no. 5, 2018.10.1063/1.5025204 ↗
45. Structural transitions in Ge2Sb2Te5 phase change memory thin films induced by nanosecond UV optical pulses10.3390/ma13092082 ↗
46. The relationship between electron transport and microstructure in Ge2Sb2Te5 alloy10.3390/nano13030582 ↗
47. Microstructure and crystallization kinetics of Ge2Sb2Te5–Sn phase change materials10.1007/s10854-018-9746-0 ↗
48. Operando electrical biasing TEM experiments of Ge-rich GST thin films with FIB sample preparation10.1016/j.jallcom.2024.175626 ↗
49. Oxygen incorporation into GST phase-change memory matrix10.1016/j.apsusc.2015.01.203 ↗
50. High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge2Sb2Te510.1063/1.2236216 ↗
51. S.-K. Kang et al., “X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas,” Applied Physics Letters, vol. 93, no. 4, 2008.10.1063/1.2967468 ↗
52. Tunable optical response based on Au@ GST core–shell hetero-nanostructures10.1021/acsanm.1c01708 ↗
53. M. Li et al., “PLD-derived Ge2Sb2Te5 phase-change films with extreme bending stability for flexible device applications,” Applied Physics Letters, vol. 116, no. 16, 2020.10.1063/5.0001348 ↗
54. A. Pathak, S. K. Pandey, and J. K. Behera, “Optical band-gap evolution and local structural change in Ge2Sb2Te5 phase change material,” in Journal of Physics: Conference Series, 2023, vol. 2426, no. 1: IOP Publishing, p. 012045.10.1088/1742-6596/2426/1/012045 ↗
55. XPS study of Ge-Se-Te surfaces functionalized with organosilanes10.1016/j.apsusc.2022.154921 ↗
56. Chemical bonding characteristics of Ge 2Sb 2Te 5 for thin films
57. Unraveling the crystallization kinetics of the Ge2Sb2Te5 phase change compound with a machine-learned interatomic potential10.1038/s41524-024-01217-6 ↗
58. J. Hegedus and S. Elliott, “Computer simulation of amorphous-crystal phase transformations of GST-225 memory material”, Materials Research Society Online Proceedings Library, Vol. 1072, No. 102, 2011.
59. K. Fuchs, “The conductivity of thin metallic films according to the electron theory of metals,” in Mathematical Proceedings of the Cambridge Philosophical Society, 1938, vol. 34, no. 1: Cambridge University Press, pp. 100-108.10.1017/S0305004100019952 ↗
60. D. Gall, “The search for the most conductive metal for narrow interconnect lines,” Journal of Applied Physics, vol. 127, no. 5, 2020.10.1063/1.5133671 ↗
61. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces10.1103/PhysRevB.1.1382 ↗
62. K. Shimakawa et al., “Effects of Grain Boundaries on THz Conductivity in the Crystalline States of Ge2Sb2Te5 Phase‐Change Materials: Correlation with DC Loss,” physica status solidi (RRL)–Rapid Research Letters, vol. 15, no. 3, p. 2000411, 2021.10.1002/pssr.202000411 ↗
63. Terahertz and direct current losses and the origin of non-Drude terahertz conductivity in the crystalline, states of phase change materials10.1063/1.4847395 ↗
64. Electrical properties of nanocrystalline media: optical conductivity and non-Drude behavior in the terahertz frequency range10.1139/cjp-2013-0553 ↗
65. The origin of non-Drude terahertz conductivity in nanomaterials10.1063/1.3697404 ↗