Composition-dependent electrical characteristics of GeSeTe-based selector-only memory device
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OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · 2D Materials and Applications
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References (47)
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1. Cao, Qiang, et al. Nonvolatile multistates memories for high-density data storage. ACS Applied Materials & Interfaces 12.38 (2020): 42449-42471. Doi: 10.1021/acsami.0c10184.10.1021/acsami.0c10184 ↗
2. Vaithianathan M. Emerging Non-Volatile Memory Technologies and Their Impacton Computer Architecture. IJERET [Internet]. 2025 Jan. 28 [cited 2025 Mar. 23];6(1):36-43. Doi: 10.63282/3050-922X/ijeret.v1i1.11.10.63282/3050-922X.IJERET-V6I1P105 ↗
3. S. -K. Park, Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory, 2015 IEEE International Memory Workshop (IMW), Monterey, CA, USA, 2015, pp. 1-4, Doi: 10.1109/IMW.2015.7150307.10.1109/IMW.2015.7150307 ↗
4. Main memory Scaling: challenges and solution directions
5. K. Takeuchi, Scaling challenges of NAND flash memory and hybrid memory system with storage class memory & NAND flash memory, Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, San Jose, CA, USA, 2013, pp. 1-6, Doi: 10.1109/CICC.2013.6658450.10.1109/CICC.2013.6658450 ↗
6. An efficient in-memory computing architecture for image enhancement in AI applications10.1109/ACCESS.2022.3171799 ↗
7. Dynamic performance and power optimization with heterogeneous processing-in-memory for AI applications on edge devices10.3390/mi15101222 ↗
8. Advances in emerging memory technologies: from data storage to artificial intelligence10.3390/app112311254 ↗
9. Edge-computing architectures for internet of things applications: a survey10.3390/s20226441 ↗
10. I.M. Park et al., Enhanced Endurance Characteristics in High Performance 16 nm Selector Only Memory (SOM), 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4, Doi: 10.1109/IEDM45741.2023.10413748.10.1109/IEDM45741.2023.10413748 ↗
11. Enhancing selector-only memory reliability through multi-step write pulse10.1109/LED.2024.3483960 ↗
12. Memory selector devices and crossbar array design: a modeling-based assessment10.1007/s10825-017-1059-7 ↗
13. Phase-change memory by GeSbTe electrodeposition in crossbar arrays10.1021/acsaelm.1c00491 ↗
14. Cross-point memory design challenges and survey of selector device characteristics10.1007/s10825-017-1062-z ↗
15. T. Ravsher et al., Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory, 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. 7A.5-1-7A.5-9, Doi: 10.1109/IRPS48228.2024.10529450.10.1109/IRPS48228.2024.10529450 ↗
16. Chien, Wei-Chih, et al. A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2024. 10.1109/VLSITechnologyandCir46783.2024.10631520.10.1109/VLSITechnologyandCir46783.2024.10631520 ↗
17. Koo, Yunmo, Kyungjoon Baek, and Hyunsang Hwang. Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications. 2016 IEEE symposium on VLSI technology. IEEE, 2016.10.1109/VLSIT.2016.7573389 ↗
18. Seo, Hyun Kyu, June Hyuk Lee, and Min Kyu Yang. GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays. AIP Advances 15.2 (2025). Doi: 10.1063/5.0252225.10.1063/5.0252225 ↗
19. Chalcogenide ovonic threshold switching selector10.1007/s40820-023-01289-x ↗
20. J. Lee et al., Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (∼ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment Engineering, 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4, Doi: 10.1109/IEDM45741.2023.10413815.10.1109/IEDM45741.2023.10413815 ↗
21. S. Hong et al., Extremely high performance, high density 20 nm self-selecting cross-point memory for Compute Express Link, 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 18.6.1-18.6.4, Doi: 10.1109/IEDM45625.2022.10019415.10.1109/IEDM45625.2022.10019415 ↗
22. Improved electrical characteristics of field effect transistors with GeSeTe-based ovonic threshold switching devices10.3390/ma16124315 ↗
23. Leakage current stability analysis for subthreshold SRAM10.3390/electronics11081196 ↗
24. Impact of gate leakage considerations in tunnel field effect transistor design10.7567/JJAP.53.074201 ↗
25. Understanding switching mechanism of selector-only memory using Se-based ovonic threshold switch device10.1109/TED.2024.3378221 ↗
26. Ryu, Jin Joo, et al. Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching Performance. ACS Applied Materials & Interfaces 16.50 (2024): 69564-69575. Doi: 10.1021/acsami.4c15080.10.1021/acsami.4c15080 ↗
27. Electrical switching and topological thresholds in Ge-Te and Si-Te glasses10.1007/s00339-005-3221-5 ↗
28. Robert, Bruno, et al. XPS study of Ge-Se-Te surfaces functionalized with organosilanes. Applied Surface Science 607 (2023): 154921. Doi: 10.1016/j.apsusc.2022.154921Get rights and content.10.1016/j.apsusc.2022.154921 ↗
29. Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates10.1088/1361-6528/ab8668 ↗
30. Material and structural engineering of ovonic threshold switch for highly reliable performance
31. Z. Černošek, E. Černošková, M. Hejdová, J. Holubová, R. Todorov,The properties and structure of GeSeTe glasses and thin films, Journal of Non-Crystalline Solids,Volume 460, 2017, Pages 169-177, ISSN 0022-3093, Doi: 10.1016/j.jnoncrysol.2017.01.032.10.1016/j.jnoncrysol.2017.01.032 ↗
32. Experimental analysis and ANFIS modeling of optical properties and band gap engineering in Se–Te–Ge film composition and insights into its photonic applications10.1140/epjp/s13360-024-05531-2 ↗
33. In-doped GeSbSeTe thin films for increased memory window of selector-only-memory devices
34. A self-selecting memory element based on a method of interconnected ovonic threshold switching device10.1007/s11432-023-3907-x ↗
35. Kim, Jo-Eun, et al. Flexible parylene C-based RRAM array for neuromorphic applications. IEEE Access 10 (2022): 109760-109767. Doi: 10.1109/ACCESS.2022.3211956.10.1109/ACCESS.2022.3211956 ↗
36. Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators10.1038/s41467-023-44620-1 ↗
37. High-threshold-stability GeSe-based selector-only memory enabled by gallium doping10.1109/LED.2025.3598975 ↗
38. Write endurance enhanced and large memory window of GeSe-based selector-only memory with indium doping scheme
39. Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition10.1039/D2TC03656H ↗
40. Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
41. The effect of doping Sb on the electronic structure and the device characteristics of ovonic threshold switches based on Ge-Se10.1038/srep07099 ↗
42. T. Ravsher, D. Garbin, A. Fantini, R. Degraeve, S. Clima, G.L. Donadio, S. Kundu, H. Hody, W. Devulder, J. Van Houdt, Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition, physica status solidi (RRL)–Rapid Research Doi: 10.1002/pssr.202200417.10.1002/pssr.202200417 ↗
43. H.J. Sung, M. Choi, Z. Wu, H. Chae, S. Heo, Y. Kang, B. Koo, J.B. Park, W. Yang, Y. Park, Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory, Doi: 10.1002/advs.202408028.10.1002/advs.202408028 ↗
44. M. Kim, Y. Bae, J. Park, J. Yeon, H. Shim, S. Jin, H. Kim, S. Oh, G. Do, D. Yun, First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory, in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), IEEE, 2024, pp. 1-2. Doi: 10.1109/VLSITechnologyandCir46783.2024.10631351.10.1109/VLSITechnologyandCir46783.2024.10631351 ↗
45. Hatayama, Shogo, et al. “Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching.” ACS Applied Electronic Materials 7.6 (2025): 2650-2659. Doi: 10.1021/acsaelm.5c00292.10.1021/acsaelm.5c00292 ↗
46. Advanced tellurium-based threshold switching devices for high-density memory arrays
47. S.Yoo. Electrical Switching Characteristics of Chalcogenide Thin Films. Diss. Graduate School of Seoul National University, 2019. https://hdl.handle.net/10371/151805.