journal article·2026-02

Reverse-bias driven anomalous polarity switching in FeSi2/Ga2O3-NRs heterojunction based solar-blind photodetector

Rohit Dahiya, Damanpreet Kaur, Xuanwei Zhang, Badri Prasad Gatadi, Kamlesh Bhatt, Rajendra Singh, Motofumi Suzuki, Mukesh Kumar

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OpenAlex topics: Ga2O3 and related materials · Thin-Film Transistor Technologies · Ferroelectric and Negative Capacitance Devices

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References (45)

Show source-provided references
1. A strategic review on gallium oxide based deep-ultraviolet photodetectors: recent progress and future prospects10.1002/adom.202002160 ↗
2. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
3. GaO solar-blind photodetectors: from civilian applications to missile detection and research agenda10.1016/j.optmat.2024.116397 ↗
4. High-performance β-Ga2O3-based solar-blind photodetector with ultralow dark current and fast photoresponse for deep-ultraviolet communication10.1364/OME.449496 ↗
5. Phase dependent radiation hardness and performance analysis of amorphous and polycrystalline Ga2O3 solar-blind photodetector against swift heavy ion irradiation10.1063/5.0019786 ↗
6. Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency10.1016/j.jallcom.2024.177757 ↗
7. Polarization-induced photocurrent switching effect in heterojunction photodiodes10.1007/s12274-022-5086-8 ↗
8. Ultrahigh bipolar photoresponse in a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 nanowires pn junction10.1021/acsami.4c04812 ↗
9. Visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions for dual-band optoelectronic logic operation10.1063/5.0250621 ↗
10. Wavelength-selective, high-speed, self-powered isotype heterojunction n+-ZnO/n-Si photodetector with engineered and tunable spectral response10.1002/admt.202401740 ↗
11. Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature10.1063/1.3151915 ↗
12. Doubled thermoelectric figure of merit in p-Type β-FeSi2 via synergistically optimizing electrical and thermal transports10.1021/acsami.0c00321 ↗
13. Electronic properties of semiconducting FeSi2 films10.1063/1.346601 ↗
14. Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures10.1063/1.4789391 ↗
15. X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi2 thin films fabricated by ion beam sputter deposition10.1016/j.apsusc.2009.11.090 ↗
16. Gallium oxide nanowires for UV detection with enhanced growth and material properties10.1038/s41598-020-78326-x ↗
17. β-FeSi2: a high refractive index candidate material for infrared bandpass filters10.1063/5.0173838 ↗
18. Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics10.1016/j.apsusc.2023.157597 ↗
19. Avoiding common errors in X-ray photoelectron spectroscopy data collection and analysis, and properly reporting instrument parameters10.1016/j.apsadv.2023.100534 ↗
20. The effect of Fe-coverage on the structure, morphology and magnetic properties of α-FeSi2 nanoislands10.1088/0957-4484/23/49/495603 ↗
21. Fabrication of β-FeSi2 thin film on Si(111) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)
22. XPS investigations of FeSi, FeSi2 and Fe implanted in Si and Ge10.1088/0953-8984/2/22/016 ↗
23. Synchrotron-radiation photoemission and x-ray absorption of Fe silicides10.1103/PhysRevB.48.8299 ↗
24. XPS study of chemically etched GaAs and InP10.1116/1.570694 ↗
25. Precise determination of the valence-band edge in X-ray photoemission spectra: application to measurement of semiconductor interface potentials10.1103/PhysRevLett.44.1620 ↗
26. Measurement of the band gap by reflection electron energy loss spectroscopy10.1016/j.elspec.2016.08.001 ↗
27. Interfacial-mixing and band engineering induced by annealing of CdS and a-Ga2O3 n–n-type thin-film heterojunction and its impact on carrier dynamics for high-performance solar-blind photodetection10.1021/acsaelm.3c00527 ↗
28. Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces10.1038/s41699-020-00179-9 ↗
29. Organic photodetectors for next-generation wearable electronics10.1002/adma.201902045 ↗
30. Method of measuring shunt resistance in photodiodes
31. Synthesis of ultrathin 2D nonlayered α-MnSe nanosheets, MnSe/WS2 heterojunction for high-performance photodetectors10.1002/sstr.202100028 ↗
32. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction10.1038/s41467-017-00722-1 ↗
33. Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector10.1002/advs.202300413 ↗
34. A bipolar response deep ultraviolet photodetector for encryption and anti-interference communication based on an a-Sb2O5/a-Ga2O3 heterojunction
35. Revealing enhanced optoelectronic performance of sb2se3-based self-sustaining heterostructures with Bi2Se3 and ZnSe: a dual polarity photo response10.1002/adfm.202405364 ↗
36. Carrier trapping and recombination: the role of defect physics in enhancing the open circuit voltage of metal halide perovskite solar cells10.1039/C6EE01729K ↗
37. Spectrally selective and highly sensitive UV photodetection with UV-A,C band specific polarity switching in silver plasmonic nanoparticle enhanced gallium oxide thin-film10.1002/adom.202000212 ↗
38. Novel self-powered photodetector with binary photoswitching based on SnSx/TiO2 heterojunctions10.1021/acsami.0c05247 ↗
39. Differentiation of ultraviolet/visible photons from near infrared photons by MoS2/GaN/Si-based photodetector10.1063/5.0060403 ↗
40. Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector10.1039/C8TC02188K ↗
41. Dual-polarity response in self-powered ZnO NWs/Sb2Se3 film heterojunction photodetector array for optical communication10.1016/j.nanoen.2019.104312 ↗
42. Photocurrent polarity controlled by light wavelength in self-powered ZnO nanowires/SnS photodetector system10.1016/j.isci.2018.01.002 ↗
43. A tailorable polarity-flipping response in self-powered, flexible Sb2Se3/ZnO bilayer photodetectors10.1039/D1TC00786F ↗
44. Self-powered and spectrally distinctive nanoporous Ga2O3/GaN epitaxial heterojunction UV photodetectors10.1002/adpr.202100049 ↗
45. Wavelength-modulated polarity switch self-powered Bi2Se3/GaN heterostructure photodetector10.1016/j.mssp.2024.108553 ↗