Atomic layer etching-enabled interface engineering for enhanced carrier transport in GaN trench MOSFETs
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (56)
Show source-provided references
1. Gallium nitride vertical power devices on foreign substrates: a review and outlook10.1088/1361-6463/aac8aa ↗
2. GaN-based power devices: physics, reliability, and perspectives10.1063/5.0061354 ↗
3. Vertical gan power devices: device principles and fabrication technologies—Part I10.1109/TED.2021.3083239 ↗
4. Trench formation and corner rounding in vertical GaN power devices10.1063/1.4983558 ↗
5. GaN-on-Si quasi-vertical power MOSFETs10.1109/LED.2017.2779445 ↗
6. 1200 V fully-Vertical GaN-on-Si power MOSFET10.1109/LED.2025.3647728 ↗
7. Effects of p-GaN body doping concentration on the on-state performance of vertical GaN trench MOSFETs10.1109/LED.2021.3080260 ↗
8. High-performance GaN vertical fin power transistors on bulk GaN substrates10.1109/LED.2017.2670925 ↗
9. Large area 1.2 kV GaN Vertical Power FinFETs with a record switching figure-of-merit
10. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-Ion-Implanted GaN as current blocking layer10.1109/LED.2008.922982 ↗
11. Normally OFF Trench CAVET with active Mg-doped GaN as current blocking layer10.1109/TED.2016.2632150 ↗
12. In Situ Oxide, GaN Interlayer-based vertical trench moSFET (OG-FET) on Bulk GaN substrates10.1109/LED.2017.2649599 ↗
13. Large-area in-situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET)10.1109/LED.2018.2813312 ↗
14. Electro-thermal investigation of GaN vertical trench MOSFETs10.1109/LED.2021.3065362 ↗
15. Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices10.1063/5.0040920 ↗
16. Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas10.1016/j.apsusc.2010.07.088 ↗
17. H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces10.1016/j.apsusc.2021.152309 ↗
18. C. Liu, R.A. Khadar, E. Matioli, 645 V quasi-vertical GaN power transistors on silicon substrates, in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE, Chicago, IL, 2018: pp. 240–243.10.1109/ISPSD.2018.8393647 ↗
19. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact10.7567/1882-0786/ab13d7 ↗
20. A study on the impact of channel mobility on switching performance of vertical GaN MOSFETs10.1109/TED.2018.2864260 ↗
21. First demonstration of AlSiO as gate dielectric in GaN FETs. Applied to a high performance OG-FET10.1109/LED.2017.2756926 ↗
22. A high channel mobility and a normally‐off operation of a vertical GaN metal‐oxide‐semiconductor field‐effect transistors using an AlSiO/AlN gate stack structure on m ‐plane trench sidewall10.1002/pssr.202400010 ↗
23. Z. Han, S. Yang, M. Wang, C. Chu, S. Long, Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric, in: 2024 IEEE International Electron Devices Meeting (IEDM), IEEE, San Francisco, CA, USA, 2024: pp. 1–4. doi: 10.1109/IEDM50854.2024.10873399.10.1109/IEDM50854.2024.10873399 ↗
24. Over 200 cm 2 V −1 s −1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface10.35848/1882-0786/ace33c ↗
25. Atomic layer etching (ALE) of III-nitrides10.1063/5.0159048 ↗
26. Comparative study of two atomic layer etching processes for GaN10.1116/1.5134130 ↗
27. Channel engineering of normally-OFF AlGaN/GaN MOS-HEMTs by atomic layer etching and high-$\kappa$ dielectric10.1109/LED.2018.2856934 ↗
28. Millimeter-wave AlGaN/GaN HEMTs with 43.6% power-added-efficiency at 40 GHz fabricated by atomic layer etching gate recess10.1109/LED.2020.2984663 ↗
29. Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer10.1016/j.mssp.2022.106544 ↗
30. Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching10.1116/6.0003350 ↗
31. Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching10.1364/OL.530719 ↗
32. Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
33. Alleviate sidewall damage of InGaN green micro-LEDs by atomic layer etching10.1364/OL.561706 ↗
34. Development of Micron Sized Photonic Devices based on Deep GaN Etching10.3390/photonics8030068 ↗
35. Angular dependent XPS study of surface band bending on Ga-polar n-GaN10.1016/j.apsusc.2018.01.196 ↗
36. Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etching10.1016/j.apsusc.2024.160040 ↗
37. M. Tautz, A. Weimar, C. Graßl, M. Welzel, D. Díaz Díaz, Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level, Physica Status Solidi (a) 217 (2020) 2000221. doi: 10.1002/pssa.202000221.10.1002/pssa.202070060 ↗
38. Performance improvement of GaN-based laser diode by TMAH solution treatment on an m-plane-facet sidewall ridge structure10.1364/OL.558161 ↗
39. Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN10.3390/nano8121026 ↗
40. Luminescence properties of defects in GaN10.1063/1.1868059 ↗
41. Low leakage fully-vertical GaN-on-Si power MOSFETs10.1063/5.0253436 ↗
42. H.-S. Kang, M. Siva Pratap Reddy, D.-S. Kim, K.-W. Kim, J.-B. Ha, Y.S. Lee, H.-C. Choi, J.-H. Lee, Effect of oxygen species on the positive flat-band voltage shift in Al 2 O 3 /GaN metal–insulator–semiconductor capacitors with post-deposition annealing, J. Phys. D: Appl. Phys. 46 (2013) 155101. doi: 10.1088/0022-3727/46/15/155101.10.1088/0022-3727/46/15/155101 ↗
43. Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation10.1063/5.0245266 ↗
44. Reduction in threshold voltages in GaN-based metal oxide semiconductor field effect transistors10.1063/1.2948855 ↗
45. Comparative analysis of the GaN nonpolar plane morphology by wet treatment and its effect on electrical properties in trench MOSFET10.1021/acsami.3c02840 ↗
46. Annealing process on metal–oxide–semiconductor channel properties for quasivertical GaN‐on‐sapphire trench metal–oxide–semiconductor field‐effect transistor10.1002/pssr.202400075 ↗
47. Fully Vertical GaN-on-Si power MOSFETs10.1109/LED.2019.2894177 ↗
48. Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs10.35848/1882-0786/ac727d ↗
49. Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation10.1116/1.5063795 ↗
50. High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching
51. GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C10.1063/5.0131685 ↗
52. Effect of atomic layer etching on the surface damage removal of GaN-based light emitting diodes10.1016/j.apsusc.2025.164429 ↗
53. Wet etch clean-up of plasma damage for 1.68 kV breakdown in NiO/β-Ga2O3 chlorine-etched PN diodes10.1116/6.0004289 ↗
54. Z. Han, H. Zhang, S. Long, S. Yang, Low ON-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence, in: 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE, Kumamoto, Japan, 2025: pp. 349–352. .10.23919/ISPSD62843.2025.11117361 ↗
55. Influence of the carrier wafer during GaN etching in Cl2 plasma10.1116/6.0001478 ↗
56. Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface10.1116/6.0002133 ↗