Low-temperature plasma-enhanced atomic layer deposition of Ga2O3 films using N2O plasma for silicon surface passivation
Source abstract
Abstract
Accepted Manuscript (AAM) of the article published in Applied Surface Science.This is the author’s accepted version after peer review, before publisher formatting and typesetting.The final published version is available at: https://doi.org/10.1016/j.apsusc.2025.165092
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Research context
OpenAlex topics: Ga2O3 and related materials · Thin-Film Transistor Technologies · solar cell performance optimization
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References (32)
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