Etching-to-deposition transition in SiO2/Si 3 N 4 using CH x F y ion-based plasma etching: An atomistic study with neural network potentials
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OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Electronic and Structural Properties of Oxides
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References (97)
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1. The future transistors10.1038/s41586-023-06145-x ↗
2. Ion-and electron-assisted gas-surface chemistry—An important effect in plasma etching10.1063/1.326355 ↗
3. Plasma etching—A discussion of mechanisms10.1116/1.569958 ↗
4. Overview of atomic layer etching in the semiconductor industry10.1116/1.4913379 ↗
5. Atomic layer etching: rethinking the art of etch10.1021/acs.jpclett.8b00997 ↗
6. Atomic layer etching at the tipping point: an overview10.1149/2.0061506jss ↗
7. Characterization of highly selective SiO2/Si3N4 etching of high-aspect-ratio holes10.1143/JJAP.35.2488 ↗
8. Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures10.1116/1.580203 ↗
9. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism10.1116/1.582108 ↗
10. Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch10.1143/JJAP.36.5498 ↗
11. Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride10.1063/1.1448870 ↗
12. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide10.1116/1.1626642 ↗
13. Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching10.1116/1.3290752 ↗
14. Measurements of SiO2, polycrystalline silicon, and Si3N4 etching yields depending on ion incident angle
15. Highly selective etching of SiO2 over Si3N4 and Si in capacitively coupled plasma employing C5HF7 gas
16. Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas10.7567/JJAP.53.03DD02 ↗
17. Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N410.1116/1.4954961 ↗
18. Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors10.1116/1.5035291 ↗
19. Low-global warming potential fluoroether compounds for plasma etching of SiO2 and Si3N4 layers10.1116/1.5100302 ↗
20. Plasma atomic layer etching of SiO2 and Si3N4 with heptafluoropropyl methyl ether (C3F7OCH3)10.1116/1.5134710 ↗
21. Future of plasma etching for microelectronics: Challenges and opportunities10.1116/6.0003579 ↗
22. High rate and highly selective SiO2 etching employing inductively coupled plasma10.1143/JJAP.33.2139 ↗
23. Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide films10.1116/1.580762 ↗
24. Fluorocarbon-based plasma etching of SiO2: Comparison of C4F6/Ar and C4F8/Ar discharges10.1116/1.1517256 ↗
25. Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition10.1116/1.4971171 ↗
26. Surface phenomena during plasma-assisted atomic layer etching of SiO210.1021/acsami.7b08234 ↗
27. Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching10.1116/1.5110907 ↗
28. Science challenges and research opportunities for plasma applications in microelectronics10.1116/6.0003531 ↗
29. Ion beam experiments for the study of plasma–surface interactions10.1088/0022-3727/47/22/224008 ↗
30. Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces10.1116/1.1578653 ↗
31. Beam study of the Si and SiO2 etching processes by energetic fluorocarbon ions10.1063/1.1690094 ↗
32. Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C: F film deposition10.1063/1.1854726 ↗
33. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions10.1116/1.3610981 ↗
34. Importance of the molecular identity of ion species in reactive ion etching at low energies10.1116/1.579331 ↗
35. Etching yields of SiO2 by low energy CFx+ and F+ ions10.1063/1.110518 ↗
36. Etching Efficiency for Si and SiO2 by CFx+, F+, and C+ Ion Beams Extracted from CF4 Plasmas10.1023/A:1006930129066 ↗
37. Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV10.1116/1.1761119 ↗
38. Mechanism of SiN etching rate fluctuation in atomic layer etching10.1116/6.0000257 ↗
39. New C–F interatomic potential for molecular dynamics simulation of fluorocarbon film formation10.1116/1.582279 ↗
40. Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 I. Basic model and CF2+-ion etch characterization
41. A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of silicon and SiO210.1063/1.2464192 ↗
42. Tight-binding quantum chemical molecular dynamics simulations of mechanisms of SiO2 etching processes for CF2 and CF3 radicals10.1021/jp5015252 ↗
43. Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions10.1116/6.0002182 ↗
44. Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions10.1116/6.0002380 ↗
45. Interatomic potentials: Achievements and challenges
46. Review of force fields and intermolecular potentials used in atomistic computational materials research10.1063/1.5020808 ↗
47. Fitting empirical potentials: Challenges and methodologies10.1016/j.cossms.2013.09.001 ↗
48. Machine-learned potentials for next-generation matter simulations10.1038/s41563-020-0777-6 ↗
49. Atomistic modeling of the mechanical properties: the rise of machine learning interatomic potentials10.1039/D3MH00125C ↗
50. Recent Advances in Machine Learning-Assisted Multiscale Design of Energy Materials10.1002/aenm.202403876 ↗
51. Extending machine learning beyond interatomic potentials for predicting molecular properties10.1038/s41570-022-00416-3 ↗
52. Construction of high accuracy machine learning interatomic potential for surface/interface of nanomaterials—A review10.1002/adma.202305758 ↗
53. Machine learning interatomic potential: Bridge the gap between small-scale models and realistic device-scale simulations
54. Applications and training sets of machine learning potentials
55. Atomistic simulation of HF etching process of amorphous Si3N4 using machine learning potential10.1021/acsami.4c07949 ↗
56. Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching10.1116/6.0000395 ↗
57. Python Materials Genomics (pymatgen): A robust, open-source python library for materials analysis10.1016/j.commatsci.2012.10.028 ↗
58. Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates10.1116/1.581534 ↗
59. The influence of hydrogen concentration in amorphous carbon films on mechanical properties and fluorine penetration: a density functional theory and ab initio molecular dynamics study10.1039/C9RA09328A ↗
60. Estimation of the atomic density of amorphous carbon using ion implantation, SIMS and RBS10.1016/S0257-8972(02)00247-5 ↗
61. Hard graphitic-like amorphous carbon films with high stress and local microscopic density10.1116/1.1365130 ↗
62. Exploring the frontiers of condensed-phase chemistry with a general reactive machine learning potential10.1038/s41557-023-01427-3 ↗
63. Neutralization of ions at surfaces10.1103/PhysRevB.16.4324 ↗
64. Ion neutralization studies of the (111),(11̄1̄) and (110) surfaces of GaAs10.1016/0039-6028(66)90006-9 ↗
65. Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams10.1116/1.1385906 ↗
66. LAMMPS-a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales10.1016/j.cpc.2021.108171 ↗
67. Data-driven material models for atomistic simulation10.1103/PhysRevB.99.184305 ↗
68. Machine-learning interatomic potential for radiation damage effects in bcc-iron10.1016/j.commatsci.2021.110960 ↗
69. Machine-learning interatomic potential for radiation damage and defects in tungsten10.1103/PhysRevB.100.144105 ↗
70. Fast and accurate machine-learned interatomic potentials for large-scale simulations of Cu, Al, and Ni
71. Large-scale machine-learning molecular dynamics simulation of primary radiation damage in tungsten10.1103/PhysRevB.108.054312 ↗
72. Spectral neighbor analysis method for automated generation of quantum-accurate interatomic potentials10.1016/j.jcp.2014.12.018 ↗
73. Atomistic simulations of nuclear fuel UO2 with machine learning interatomic potentials
74. Deep learning inter-atomic potential model for accurate irradiation damage simulations10.1063/1.5098061 ↗
75. Machine learned interatomic potential for dispersion strengthened plasma facing components10.1063/5.0135269 ↗
76. The stopping and range of ions in matter
77. SIMPLE-NN: An efficient package for training and executing neural-network interatomic potentials10.1016/j.cpc.2019.04.014 ↗
78. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
79. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
80. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗
81. Molecular dynamics simulation of ion ranges in the 1–100 keV energy range10.1016/0927-0256(94)00085-Q ↗
82. Allen · 2017
83. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas10.1063/1.325382 ↗
84. Absolute density measurement of cyanogen fluoride in CHF3/N2 electron cyclotron resonance plasma using infrared diode laser absorption spectroscopy10.1063/1.366335 ↗
85. Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy10.1063/1.102336 ↗
86. Introduction to x-ray photoelectron spectroscopy10.1116/6.0000412 ↗
87. Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF4-H210.1149/1.2129291 ↗
88. High rate and highly selective SiO2 etching employing inductively coupled plasma and discussion on reaction kinetics10.1116/1.579831 ↗
89. Relationship of etch reaction and reactive species flux in C4F8/Ar/O2 plasma for SiO2 selective etching over Si and Si3N410.1116/1.1376709 ↗
90. Observation of surface reaction layers formed in highly selective SiO2 etching10.1116/1.1383064 ↗
91. Mass spectrometric studies of plasma etching of silicon nitride10.1116/1.582949 ↗
92. Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride10.1116/1.584398 ↗
93. Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of Ion Bombardment10.1116/1.582713 ↗
94. Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition10.1149/1.1393382 ↗
95. Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching10.1063/1.5131030 ↗
96. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma10.1116/1.4935462 ↗
97. Atomic layer etching of silicon nitride using cyclic process with hydrofluorocarbon chemistry10.7567/JJAP.56.06HB07 ↗