journal article·2025-08

Photo-enhanced field-emission characteristics of laser molecular beam epitaxy grown GaN nanocolumn network on flexible titanium metal foil

Bipul Kumar Pradhan, Roopa, Vishnu Aggarwal, Amit Kumar Mauraya, Sunil Singh Kushvaha, Senthil Kumar Muthusamy

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OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Thermal Radiation and Cooling Technologies

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References (46)

Show source-provided references
1. Fully sealed high-brightness carbon-nanotube field-emission display10.1063/1.125253 ↗
2. Novel cold cathode materials
3. Photoelectron beam from semiconductor photocathodes leading to new inspection technologies, Proceedings Volume 1295510.1117/12.3010730 ↗
4. Near-monochromatic tuneable cryogenic niobium electron field emitter10.1103/PhysRevLett.129.244802 ↗
5. Cold cathode based microwave devices for current and future systems
6. Electron-beam-pumped UVC emitters based on an (Al,Ga)N material system10.3390/nano13142080 ↗
7. Anode-integrated GaN field emitter arrays for compact vacuum transistors10.1109/LED.2023.3317071 ↗
8. Review—growth of Al-, Ga-, and In-doped ZnO NS via a low-temperature process and their application to field emission devices and ultraviolet photosensors10.1149/2.0051705jes ↗
9. Role of surface chemistry of Ta metal foil on the growth of GaN nanorods by laser molecular beam epitaxy and their field emission characteristics10.1021/acsami.3c16892 ↗
10. Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects10.1039/C6TC02625G ↗
11. Stability, reliability, and robustness of GaN power devices: a review10.1109/TPEL.2023.3266365 ↗
12. GaN nanowire field emitters with the adsorption of Pt nanoparticles10.1039/C7RA02568H ↗
13. Improving field emission properties of GaN nanowires by oxide coating10.1063/1.3154564 ↗
14. Characteristics of field emitters on the basis of Pd-adsorbed ZnO nanostructures by photochemical method10.1021/acsanm.0c03080 ↗
15. UV-enhanced field-emission performances of Pd-adsorbed ZnO nanorods through photochemical synthesis10.1149/2162-8777/abd883 ↗
16. Characteristics of field-emission emitters based on graphene decorated ZnO nanostructures10.1109/JEDS.2021.3118059 ↗
17. Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy10.1016/j.ultramic.2018.01.010 ↗
18. Quantum phase modulation and retrieval in an ultrafast transmission electron microscope10.1051/bioconf/202412909007 ↗
19. Determination of satellite valley position in GaN emitter from photoexcited field emission investigations10.1063/1.3533770 ↗
20. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy10.1103/PhysRevB.89.235124 ↗
21. GaN surface electron field emission efficiency enhancement by low-energy photon illumination
22. Peculiarities of the photon-assisted field emissions from GaN nanorods10.1116/1.3368463 ↗
23. Photo-assisted field emission and electro-reflectance modulation investigations of GaN nanorod arrays10.1016/j.tsf.2014.06.017 ↗
24. Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil10.1039/C9RA09707D ↗
25. Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer10.1103/PhysRevB.83.035310 ↗
26. Quantitative description for the growth rate of self-induced GaN nanowires10.1103/PhysRevB.85.155313 ↗
27. Phonon dispersion and Raman scattering in hexagonal GaN and AlN10.1103/PhysRevB.58.12899 ↗
28. Luminescence properties of defects in GaN10.1063/1.1868059 ↗
29. Investigation on surface polarization of Al2O3-capped GaN/AlGaN/GaN heterostructure by angle-resolved x-ray photoelectron spectroscopy10.1186/s11671-017-2271-x ↗
30. Tuning the work function of GaN with organic molecular acceptors10.1103/PhysRevB.93.125309 ↗
31. Plasmonic hot-hole injection combined with patterned substrate for performance improvement in trapezoidal PIN GaN microwire self-powered ultraviolet photodetector10.1016/j.nanoen.2022.107926 ↗
32. Synthesis of single crystalline CdS nanocombs and their application in photo-sensitive field emission switches10.1039/C0NR00659A ↗
33. Enhanced field emission properties of two-dimensional ZnO nanosheets under UV illumination10.1109/JSTQE.2014.2372055 ↗
34. Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV10.1016/j.cplett.2010.03.033 ↗
35. Realization of an efficient electron source by ultraviolet-light-assisted field emission from a one-dimensional ZnO nanorods/n-GaN heterostructure photoconductive detector10.1039/C8NR08154A ↗
36. Huang and Shoou-Jinn Chang, UV enhanced field emission performance of Mg-doped ZnO nanorods10.1109/TED.2014.2312853 ↗
37. UV enhanced field emission properties of Ga-doped ZnO nanosheets10.1109/TED.2015.2416730 ↗
38. Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure10.1109/TED.2017.2771404 ↗
39. UV enhanced indium-doped ZnO nanorod field emitter10.1109/TED.2013.2280910 ↗
40. Use of Millikan–Lauritsen plots, rather than Fowler–Nordheim plots, to analyze field emission current-voltage data10.1063/1.3140602 ↗
41. 3D Solar-blind Ga2O3 photodetector array realized via origami method10.1002/adfm.201906040 ↗
42. Vacancy-type defects and their trapping/detrapping of charge carriers in ion-implanted GaN studied by positron annihilation
43. Anomalous photocurrent reversal due to hole traps in AlGaN-based deep-ultraviolet light-emitting diodes10.3390/mi13081233 ↗
44. Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias10.1016/j.matdes.2022.110917 ↗
45. Photothermal and joule-heating-induced negative-photoconductivity-based ultraresponsive and near-zero-biased copper selenide photodetectors10.1021/acsaelm.9b00174 ↗
46. Field emission energy distribution and three-terminal current-voltage characteristics from planar graphene edges10.1063/1.5064366 ↗