Investigation of N-plasma surface treatment for N-polar GaN
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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Metal and Thin Film Mechanics
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References (26)
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1. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress10.1063/1.5142538 ↗
2. Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes10.1038/s41377-021-00560-3 ↗
3. Technological breakthroughs in chip fabrication, transfer, and color conversion for high-performance micro-LED displays10.1002/adma.202204947 ↗
4. High-efficiency InGaN red mini-LEDs on sapphire toward full-color nitride displays: Effect of strain modulation10.1002/adfm.202300042 ↗
5. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing10.1016/j.sse.2024.108861 ↗
6. S. Mohanty, K. Khan, and E. Ahmadi, “N-polar GaN: Epitaxy, properties, and device applications,”, Prog. Quantum Electron., Review vol. 87, p. 34, Jan 2023, Art no. 100450. doi: 10.1016/j.pquantelec.2022.100450.10.1016/j.pquantelec.2022.100450 ↗
7. L.V. Deurzen, E. Kim, N. Pieczulewski, Z.X. Zhang, A. Feduniewicz-Zmuda, M. Chlipala, M. Siekacz, D. Muller, H.G. Xing, D. Jena, H. Turski, “Using both faces of polar semiconductor wafers for functional devices,” Nature, Early Access p. 19, 2024 Sep 2024. doi: 10.1038/s41586-024-07983-z.10.1038/s41586-024-07983-z ↗
8. Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition10.1364/OL.463618 ↗
9. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes10.1063/1.3694967 ↗
10. X-band power performance of N-face GaN MIS-HEMTs10.1049/el.2010.3129 ↗
11. Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz10.1049/el.2016.2664 ↗
12. N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz10.1109/LED.2017.2653192 ↗
13. Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures10.1063/1.3431391 ↗
14. Angular dependent XPS study of surface band bending on Ga-polar n-GaN10.1016/j.apsusc.2018.01.196 ↗
15. High-quality interface in Al2O3/GaN/AlGaN/GaN MIS structures with in situ pre-gate plasma nitridation10.1109/LED.2013.2286090 ↗
16. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments10.1063/5.0041421 ↗
17. Effective suppression of amorphous Ga2O and related deep levels on the GaN surface by high-temperature remote plasma pretreatments in GaN-based metal-insulator-semiconductor electronic devices10.1021/acsami.3c03094 ↗
18. Investigating the effect of O2 plasma treatment on the operational characteristics of Schottky-gate AlGaN/GaN HEMT10.1088/1361-6641/ad54e6 ↗
19. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces10.1116/1.3054345 ↗
20. Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition10.1016/j.jcrysgro.2007.12.051 ↗
21. A comparison of N-polar (000-1) GaN surface preparations for the atomic layer deposition of Al2O310.1149/2.0201410jss ↗
22. Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN10.1116/1.4831875 ↗
23. Investigation into the growth mode of GaN thin films on 4H-SiC substrates via plasma-enhanced atomic layer deposition10.1016/j.vacuum.2023.112878 ↗
24. Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN10.1016/j.sse.2020.107863 ↗
25. First-principles calculations of quantum efficiency for point defects in semiconductors: The example of yellow luminance by GaN: CN+ON and GaN:CN10.1002/adom.201700404 ↗
26. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth