Impact and mitigation of surface oxides on aluminum nitride substrates
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges10.1002/aelm.201600501 ↗
2. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films10.1021/acsnano.0c09915 ↗
3. Substantial P-Type Conductivity of AlN Achieved via Beryllium Doping10.1002/adma.202104497 ↗
4. Realization of homojunction PN AlN diodes10.1063/5.0086314 ↗
5. Cleaning of AlN and GaN surfaces10.1063/1.368814 ↗
6. Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning10.1063/1.5143968 ↗
7. The adsorption of oxygen at GaN surfaces10.1063/1.123658 ↗
8. Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces10.1209/0295-5075/89/56004 ↗
9. Growth of high purity AlN crystals10.1016/0022-0248(76)90139-1 ↗
10. Surface composition of AlN powders studied by x‐ray photoelectron spectroscopy and bremsstrahlung‐excited Auger electron spectroscopy10.1116/1.578626 ↗
11. Mechanism and kinetics of aluminum nitride powder degradation in moist air10.1111/j.1551-2916.2005.00767.x ↗
12. Growth of Oxide Layers on Thin Aluminum Nitride Samples Measured by Electron Energy-Loss Spectroscopy10.1111/j.1151-2916.1993.tb07766.x ↗
13. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution10.1007/s11664-006-0044-x ↗
14. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics10.1063/1.1435834 ↗
15. C.M. Matthews, Surface oxide removal on aluminum nitride substrates, Georgia Institute of Technology, 2023. https://hdl.handle.net/1853/71996 (accessed November 6, 2023).
16. Gallium Nitride: An Overview of Structural Defects
17. Electrical characterization of GaN p-n junctions with and without threading dislocations10.1063/1.122057 ↗
18. When group-III nitrides go infrared: New properties and perspectives
19. Comprehensive Analysis of Metal Modulated Epitaxial GaN10.1021/acsami.0c09114 ↗
20. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption10.1063/1.4942002 ↗
21. The Gaseous Species of the Al-Al2O3 System1,2,310.1021/ja01155a090 ↗
22. Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates10.1063/5.0010813 ↗
23. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
24. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition10.1063/1.114330 ↗
25. Role of hydrogen in doping of GaN10.1063/1.116027 ↗
26. Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy10.1063/1.125524 ↗
27. X-ray diffraction of III-nitrides10.1088/0034-4885/72/3/036502 ↗
28. Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis10.1063/5.0156691 ↗