journal article·2025-01

Layer stacking effect on structural, vibrational, and electronic properties of Janus-Ga2SeTe crystals

Fulong Hu, Hanwei Hu, Xuewen Zhang, Xinyu Zhang, Guangchao Shi, Jingyuan Qiao, Weidong Xiao, Lei Li, Jingzhi Shang

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Crystal Structures and Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (70)

Show source-provided references
1. Electronic performance and schottky contact of 2D GeH/InSe and GeH/In2Se3 heterostructures: Strain engineering and electric field tunability[J]
2. Tunable photocatalytic and optoelectronic properties of SiTe/SiH heterostructure as a photocatalytic water splitting with high hydrogen production[J]10.1016/j.jpcs.2024.112125 ↗
3. Theoretical prediction of electronic, transport, optical, and thermoelectric properties of Janus monolayers In2XO (X=S, Se, Te)[J]10.1103/PhysRevB.103.085422 ↗
4. Mechanical properties of monolayer GaS and GaSe crystals[J]10.1103/PhysRevB.94.245407 ↗
5. PbBi2Se4 monolayer: A new 2D material with outstanding electronic, photocatalytic, and optical properties[J]10.1016/j.solidstatesciences.2024.107483 ↗
6. 2D Re-based transition metal chalcogenides: progress, challenges, and opportunities[J]10.1002/advs.202002320 ↗
7. Layer thickness-dependent optical properties of GaTe[J]10.1016/j.apsusc.2023.158022 ↗
8. Hybrid functional calculations of electronic and thermoelectric properties of GaS, GaSe, and GaTe monolayers[J]10.1039/C8CP04723E ↗
9. First principle investigation into hexagonal and cubic structures of Gallium Selenide[J]10.1016/j.commatsci.2012.08.034 ↗
10. R.D. Rodriguez, S. Müller, E. Sheremet, et al., Selective Raman modes and strong photoluminescence of gallium selenide flakes on sp2 carbon[J], J. Vac. Sci. Technol. B 32 (2014) 04E106, doi:10.1116/1.4881995.10.1116/1.4881995 ↗
11. In-plane optical anisotropy of layered Gallium Telluride[J]10.1021/acsnano.6b05002 ↗
12. An ab initio study of the electronic structure of indium and gallium chalcogenide bilayers[J]10.1063/1.4997233 ↗
13. Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field[J]10.1039/C8CP05588B ↗
14. Tri-layered van der Waals heterostructures based on graphene, gallium selenide and molybdenum selenide[J]10.1063/1.5099616 ↗
15. Strong modulation of optical properties in rippled 2D GaSe via strain engineering[J]10.1088/1361-6528/ab0bc1 ↗
16. Thickness-dependent in-plane anisotropy of GaTe phonons[J]10.1038/s41598-021-00673-0 ↗
17. Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers[J]10.1063/1.4981877 ↗
18. Thermoelectric properties of two-dimensional gallium telluride[J]10.1007/s11664-019-07323-2 ↗
19. Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications[J]10.1016/j.spmi.2018.10.020 ↗
20. Large-area growth and stability of monolayer gallium monochalcogenides for optoelectronic devices[J]10.1021/acsanm.0c01369 ↗
21. Comparative study of structural and electronic properties of GaSe and InSe polytypes[J]10.1063/1.5030539 ↗
22. Effects of interlayer interactions on the nanoindentation response of freely suspended multilayer gallium telluride[J]
23. Anomalous indirect carrier relaxation in direct band gap atomically thin gallium telluride[J]10.1103/PhysRevB.107.075429 ↗
24. Thickness-induced structural phase transformation of layered gallium telluride[J]10.1039/C6CP01963C ↗
25. Effects of artificial stacking configurations and biaxial strain on the structural, electronic and transport properties of bilayer GaSe- A first principle study[J]10.1016/j.mssp.2021.106236 ↗
26. InSe/Te van der waals heterostructure as a high-efficiency solar cell from computational screening[J]10.3390/ma14143768 ↗
27. Energy band engineering in GaS/InS and GaSe/InS van der Waals bilayers by interlayer stacking design and applied vertical electric field - An ab-initio theoretical calculation based approach[J]10.1016/j.mssp.2024.108538 ↗
28. Tunable electronic properties of two-dimensional GaSe1-xTex Alloys[J]10.3390/nano13050818 ↗
29. The effect of intrinsic electric field on electronic structures: The case of polar Janus group-III monochalcogenides and their van der Waals heterostructures[J]10.1063/5.0153060 ↗
30. First-principles calculation of the structural, electronic and optical properties of GaSe(1–x) S(x) (x = 0, 0.25, 0.5 and 1) compounds[J]
31. Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X = Se, Te; Y = Br, I) family: ab initio perspective[J]10.1039/D1CP03706D ↗
32. Semiconducting chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula with outstanding properties: A first-principles calculation study[J]10.1021/acsomega.0c06024 ↗
33. Structure–property relationship of low-dimensional layered GaSexTe1–x alloys[J]10.1021/acs.chemmater.8b00130 ↗
34. Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials[J]
35. Controllable growth of vertical heterostructure GaTexSe1-x/Si by molecular beam Epitaxy[J]10.1021/acsnano.5b03796 ↗
36. Liquid phase growth of GaSe1−xTex mixed crystals by temperature difference method under controlled vapor pressure[J]10.1016/j.jcrysgro.2017.01.060 ↗
37. Layer-dependent electronic structure of atomically resolved two-dimensional gallium selenide telluride[J]10.1021/acs.nanolett.8b04802 ↗
38. Prediction of monoclinic single-layer Janus Ga2TeX (X = S and Se): Strong in-plane anisotropy[J]10.1103/PhysRevB.104.045425 ↗
39. High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes[J]10.1039/C6RA09239J ↗
40. Janus Ga2SeTe: A promising candidate for highly efficient solar cells[J]10.1002/solr.201900321 ↗
41. GaS0.5Te0.5 monolayer as an efficient water splitting photocatalyst[J]10.1039/C7CP01627A ↗
42. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set[J]10.1103/PhysRevB.54.11169 ↗
43. Generalized gradient approximation made simple[J]10.1103/PhysRevLett.77.3865 ↗
44. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu[J]10.1063/1.3382344 ↗
45. Implementation strategies in phonopy and phono3py[J]
46. Molecular dynamics simulations at constant pressure and/or temperature[J]10.1063/1.439486 ↗
47. Optical properties and photocatalytic applications of two-dimensional Janus group-III monochalcogenides[J]10.1021/acs.jpcc.8b12450 ↗
48. Computational prediction of electronic and optical properties of Janus Ga2SeTe monolayer[J]10.1088/1361-6463/aba38d ↗
49. Engineering electronic structures of Janus monolayer group-III monochalcogenides via biaxial strain[J]10.1016/j.physleta.2022.128504 ↗
50. Janus Ga2SeTe and In2SeTe nanosheets: Excellent photocatalysts for hydrogen production under neutral pH[J]10.1016/j.ijhydene.2023.01.133 ↗
51. Predicted novel Janus γ-Ge2XY (X/Y= S, Se, Te) monolayers with Mexican-hat dispersions and high carrier mobilities[J]10.1088/1361-6463/acbe0a ↗
52. Electronic structure and properties of layered gallium telluride[J]10.1016/j.cplett.2016.03.045 ↗
53. Structural, vibrational, elastic, electronic, and piezoelectric properties of binary γ−GeX and ternary γ−Ge2XX′ monolayers (X, X′=S, Se, and Te)[J]10.1103/PhysRevB.107.195421 ↗
54. Y. Cui, L. Peng, L. Sun, et al., Structures, stabilities and piezoelectric properties of Janus gallium oxides and chalcogenides monolayers[J], J Phys. Condens. Mat., 32 (2020) 08LT01, doi: 10.1088/1361-648X/ab538f.10.1088/1361-648X/ab538f ↗
55. The structural, electronic and optic properties in a series of M2XY (M = Ga, In; X, Y = S, Se, Te) Janus monolayer materials based on GW and the Bethe-Salpeter equation[J]10.1140/epjb/e2020-100408-0 ↗
56. Necessary and sufficient elastic stability conditions in various crystal systems[J]10.1103/PhysRevB.90.224104 ↗
57. Structural, electronic, and elastic properties of different polytypes of GaSe lamellar materials under compressive stress: insights from a DFT study[J]10.1007/s11051-022-05595-0 ↗
58. Theoretical predictions of structure and related properties of intermetallics.[J]10.1179/mst.1992.8.4.345 ↗
59. High-throughput computational screening of thermal conductivity, Debye temperature, and Grüneisen parameter using a quasiharmonic Debye model[J]10.1103/PhysRevB.90.174107 ↗
60. Phonon thermal transport in Janus single layer M2XY (M = Ga; X, Y = S, Se, Te): A study based on first-principles[J]10.1016/j.physe.2019.113683 ↗
61. Significance of Coulomb interaction in interlayer coupling, polarized Raman intensities, and infrared activities in the layered van der Waals semiconductor GaSe[J]10.1103/PhysRevB.103.195437 ↗
62. Temperature- and pressure-dependent phonon dynamics properties of gallium selenide telluride[J]10.1002/jrs.6364 ↗
63. Prediction of vibrational spectra of a molecule of C3v point group with the help symmetry and group theory[J]
64. Evidence for nonplanar atomic arrangement in graphite obtained by Raman spectroscopy[J]10.1103/PhysRevB.66.104109 ↗
65. Strain effects of stability, transport, and electro-optical properties of novel Ga2TeS monolayer[J]10.1007/s10853-024-09348-3 ↗
66. A free-standing platinum monolayer as an efficient and selective catalyst for the oxygen reduction reaction[J]10.1039/C7TA00685C ↗
67. Two-dimensional tetragonal TiC monolayer sheet and nanoribbons[J]10.1021/ja308576g ↗
68. Tuning the electronic properties of monolayer MoS2, MoSe2 and MoSSe by applying z-axial strain[J]10.1016/j.cplett.2019.06.007 ↗
69. Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy[J]10.1021/acs.nanolett.6b01007 ↗
70. H.T.T. Nguyen, V.T.T. Vi, T.V. Vu, et al., Janus Ga2STe monolayer under strain and electric field: Theoretical prediction of electronic and optical properties[J], Physica E, 124 (2020) 114358, doi: 10.1016/j.physe.2020.114358.10.1016/j.physe.2020.114358 ↗