Monolayer MoS2 CVD-growth on SiC substrates assisted with KCl

This study examines the growth of molybdenum disulfide (MoS 2 ) on semi-insulating silicon carbide (SI-SiC) substrates using chemical vapor deposition (CVD). Raman and photoluminescence measurements were utilized to characterize pristine and grown with a potassium chloride (KCl) nucleation promoter MoS 2 . The Raman spectra showed a frequency difference ( Δ ω ) of 18.7 cm −1 between the A 1 g and E 2 g modes for pristine MoS 2 , confirming its monolayer nature, while KCl-modified MoS 2 exhibited a Δ ω of 20.4 cm −1 . Pristine MoS 2 demonstrated compressive strain due to lattice mismatch, with values up to − 1 . 4 % , and a low dependency of charge doping shift on Δ ω . Conversely, KCl-modified MoS 2 flakes showed smaller strain, up to − 0 . 4 % , and a significant dependency of charge doping shift on Δ ω . Electrical characterization of 2-Terminal devices indicated a ratio of the high-resistance state to low-resistance state close to 1 for pristine MoS 2 and 1.75 for KCl-modified MoS 2 . Low-temperature photoluminescence measurements suggest that the observed behavior is due to the interaction of MoS 2 with KCl. • The present study demonstrates the successful growth of MoS 2 on semi-insulating 6H-SiC substrates doped with vanadium (SI-6H-SiC(V)), achieving ordered mono- and bilayer flakes. • Samples exhibited compressive strain due to the larger lattice constant of MoS 2 compared to SiC. Pristine MoS 2 has higher strain in comparison with KCl-modified MoS 2 samples, which is not overcompensated by the differences of thermal expansion coefficients. MoS 2 with KCl showed a stronger charge doping shift on strain and frequency differences. • The use of KCl as a nucleation promoter significantly influences the growth process, resulting in higher area coverg, HRS/LRS ratio of 1.75 at 1.2 V, suggesting their potential for low-power memristive applications.