High response speed p-i-n photodetector based on two-dimensional materials
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OpenAlex topics: Photonic and Optical Devices · 2D Materials and Applications · Nanowire Synthesis and Applications
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References (62)
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1. Avalanche photodetectors based on two-dimensional layered materials10.1007/s12274-020-3001-8 ↗
2. Band alignment engineering in two-dimensional transition metal dichalcogenide-based heterostructures for photodetectors10.1002/sstr.202000136 ↗
3. Design strategies for two-dimensional material photodetectors to enhance device performance
4. Device architecture for visible and near-infrared photodetectors based on two-dimensional SnSe2 and MoS2: a review10.3390/mi11080750 ↗
5. High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection10.1038/s41565-020-0717-2 ↗
6. High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region
7. How to characterize figures of merit of two-dimensional photodetectors10.1038/s41467-023-37635-1 ↗
8. Integrated mid-infrared sensing and ultrashort lasers based on wafer-level Td-WTe2 Weyl semimetal10.1063/5.0204248 ↗
9. Solution spin-coated BiFeO3 Onto Ga2O3 towards self-powered deep UV photo detector of Ga2O3/BiFeO3 heterojunction10.1109/JSEN.2021.3115719 ↗
10. Self-driven WSe2/Bi2O2Se Van der Waals heterostructure photodetectors with high light on/off ratio and fast response
11. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region10.1038/s41467-019-12707-3 ↗
12. Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P-N diode10.1039/D3TC01990J ↗
13. UV to NIR photodetection in lateral homojunction PN diode of WSe2 achieved via IGZO sputtering10.1039/D4TC04705B ↗
14. Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials
15. Development of directly grown-graphene–silicon Schottky barrier solar cell using co-doping technique10.1002/er.7924 ↗
16. Revealing bipolar photoresponse in multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N diode by hybrid 2D contact engineering10.1021/acsami.4c08166 ↗
17. Raman anisotropy and polarization-sensitive photodetection in 2D Bi2O2Se-WSe2 heterostructure10.1021/acsomega.1c05246 ↗
18. Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics10.1039/D1NR04281E ↗
19. High-performance photovoltaic detector based on MoTe2/MoS2 Van der Waals heterostructure
20. Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p-n diode10.1039/C8NR05291C ↗
21. WSe2/GeSe heterojunction photodiode with giant gate tunability10.1016/j.nanoen.2018.04.034 ↗
22. S. A, H. H. Hegazy, M. Z. Lqbal, M. W. Lqbal, G. Nazir, S. Hussain, Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials. Adv. Mater. Interfaces. 10 (2023) 2201937. Doi: 10.1002/admi.202201937.10.1002/admi.202201937 ↗
23. Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short-Wave Infrared Detection10.1002/adom.201900768 ↗
24. Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials
25. An optoelectronic synapse based on two-dimensional violet phosphorus heterostructure
26. High-performance violet phosphorus photodetectors with van der Waals-assisted contacts10.1007/s11433-023-2143-2 ↗
27. Liquid-phase exfoliation of violet phosphorus for electronic applications10.1002/smm2.1037 ↗
28. Passivating violet phosphorus against ambient degradation for highly sensitive and long-term stable optoelectronic devices10.1063/5.0149368 ↗
29. Ballistic two-dimensional InSe transistors10.1038/s41586-023-05819-w ↗
30. Ferroelectric-gated InSe photodetectors with high on/off ratios and photoresponsivity10.1021/acs.nanolett.0c02448 ↗
31. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe10.1038/nnano.2016.242 ↗
32. InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics10.1007/s12274-020-2757-1 ↗
33. Photoquantum Hall effect and Light-Induced Charge transfer at the Interface of Graphene/InSe Heterostructures10.1002/adfm.201805491 ↗
34. The role of traps in the photocurrent generation mechanism in thin InSe photodetectors10.1039/C9MH01020C ↗
35. Hexagonal boron nitride is an indirect bandgap semiconductor10.1038/nphoton.2015.277 ↗
36. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal10.1038/nmat1134 ↗
37. Ultrasensitive near-infrared polarization photodetectors with violet phosphorus/InSe van der Waals heterostructures10.1021/acsami.4c01396 ↗
38. Strong Interlayer transition in Few-Layer InSe/PdSe2 van der Waals heterostructure for near-infrared photodetection10.1002/adfm.202104143 ↗
39. Phonon properties of bulk violet phosphorus single crystals: temperature and pressure evolution10.1021/acsaelm.0c00731 ↗
40. Solvent-stabilized few-layer violet phosphorus and its ultrafast nonlinear optics10.1007/s12274-022-5224-3 ↗
41. Two-dimensional violet phosphorus: a p-type semiconductor for (Opto)electronics10.1021/jacs.1c12931 ↗
42. Abate, Violet phosphorus surface chemical degradation in comparison to black phosphorus10.1063/5.0045090 ↗
43. High performance self-driven polarization-sensitive photodetectors based on GeAs/InSe heterojunction10.1002/adom.202101017 ↗
44. Violet phosphorus transmission and photoconductance spectroscopy10.1088/1361-6528/accc3a ↗
45. Single-layered Hittorf’s phosphorus: a wide-bandgap high mobility 2D material10.1021/acs.nanolett.5b05068 ↗
46. Two-dimensional violet phosphorus P11: a large band gap phosphorus allotrope10.1021/jacs.3c01766 ↗
47. The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals10.1038/srep39619 ↗
48. Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures10.1038/s41565-018-0348-z ↗
49. p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices10.1039/C9RA06667E ↗
50. AsP/InSe Van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity
51. High-performance near-infrared photodetectors based on surface-doped InSe10.1002/adfm.202006788 ↗
52. Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors10.1007/s12274-020-2815-8 ↗
53. Ultralow Schottky barriers in hexagonal boron nitride-encapsulated monolayer WSe2 tunnel field-effect transistors10.1021/acsami.0c01025 ↗
54. In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing10.1007/s12274-024-6510-z ↗
55. The influence of n-AlGaN inserted layer on the performance of back-illuminated AlGaN-Based p-i-n ultraviolet photodetectors10.1002/pssa.201700358 ↗
56. Self-driven Gr/WSe2/Gr photodetector with high performance based on asymmetric Schottky van der Waals contacts
57. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
58. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
59. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
60. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
61. Atomically thin photoanode of InSe/graphene heterostructure10.1038/s41467-020-20341-7 ↗
62. Indium selenide: an insight into electronic band structure and surface excitations10.1038/s41598-017-03186-x ↗