Impact of interfacial vacancies on BaTiO3/Ge band alignment: A combined experimental and DFT study
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (57)
Show source-provided references
1. Lattice matched germanium-on-AlAs nanosheet-FETs for more-moore CMOS[J]10.1109/TED.2024.3471530 ↗
2. Near-infrared germanium PIN-photodiodes with> 1A/W responsivity[J]10.1038/s41377-024-01670-4 ↗
3. Mid-infrared barium titanate electro-optic modulators based on a germanium-on-silicon platform[J]10.1364/AO.525623 ↗
4. Freestanding germanium photonic crystal waveguide for a highly sensitive and compact mid-infrared on-chip gas sensor[J]10.1021/acssensors.4c00941 ↗
5. Impact of stoichiometry and crystallography growth strain on GeSn alloys from first principles calculations study[J]
6. Properties of a highly compensated high-purity germanium[J]10.1007/s10854-023-11814-8 ↗
7. Electron-hole scattering and minority carrier mobility in germanium[J]10.1016/0022-3697(61)90156-1 ↗
8. Holes outperform electrons in group IV semiconductor materials[J]10.1002/smsc.202200094 ↗
9. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide[J]10.1038/s41586-023-05797-z ↗
10. Coverage-dependent adsorption and stability of functionalized Ge (1 0 0) and (1 1 1) surfaces[J]10.1016/j.apsusc.2021.151466 ↗
11. Fermi-level depinning of Ge surface using hydrogen plasma-immersion ion implantation[J]10.1016/j.jallcom.2024.177972 ↗
12. Surface states and reconstruction on Ge (001)[J]10.1103/PhysRevB.32.2344 ↗
13. Chemical surface passivation of Ge nanowires[J]10.1021/ja0465808 ↗
14. Hafnium oxide (HfO2)–a multifunctional oxide: a review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories[J]10.1002/smll.202107575 ↗
15. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques[J]10.1016/j.mseb.2006.08.016 ↗
16. Graded crystalline HfO2 gate dielectric layer for high-k/Ge MOS gate stack[J]10.1109/JEDS.2021.3058631 ↗
17. Doping in barium titanate (BaTiO3): a historical perspective and future directions[J]10.30799/jacs.273.25110104 ↗
18. History and challenges of barium titanate: Part I[J]10.2298/SOS0802155V ↗
19. Optical properties and band structure of SrTiO3 and BaTiO3[J]10.1103/PhysRev.140.A651 ↗
20. Polarization fluctuations and the optical-absorption edge in BaTiO3[J]10.1103/PhysRevB.2.2679 ↗
21. Recent progress on barium titanate-based ferroelectrics for sensor applications[J]10.1002/adsr.202300168 ↗
22. Ab initio study of the BaTiO3/Ge interface[J]10.1103/PhysRevB.96.075301 ↗
23. Engineered unique elastic modes at a BaTiO3/(2× 1)-Ge (001) interface[J]10.1103/PhysRevLett.116.106101 ↗
24. Atomic and electronic structure of the ferroelectric BaTiO3/Ge (001) interface[J]10.1063/1.4883883 ↗
25. Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110) Ge[J]10.1063/1.4813226 ↗
26. R. Mckee, The interface phase and dielectric physics for crystalline oxides on semiconductors[M], Materials Fundamentals of Gate Dielectrics. Dordrecht: Springer Netherlands, 2005, pp. 291–312.10.1007/1-4020-3078-9_8 ↗
27. Physical structure and inversion charge at a semiconductor interface with a crystalline oxide[J]10.1126/science.293.5529.468 ↗
28. Hysteretic electrical transport in BaTiO3/Ba1−xSrxTiO3/Ge heterostructures[J]10.1063/1.4864648 ↗
29. Magnetron sputtered perovskite ferroelectric BaTiO3 as an electrocatalyst: morphology, surface chemical state, OER activity, optical and electrical properties[J]10.1016/j.apsusc.2024.161164 ↗
30. W. Szmyt, J. Geler-Kremer, C. Vockenhuber, et al., High-quality epitaxial BaTiO3 films grown by high-vacuum chemical vapor deposition for integrated electro-optical devices[J]. Available at SSRN 5175122.
31. Colossal dielectric constant of nanocrystalline/amorphous homo-composite batio3 films deposited via pulsed laser deposition technique[J]10.3390/nano14201677 ↗
32. BaTiO3 thin films for ferroelectics and optics synthesized via sol-gel[J]
33. Band offsets in sputtered BaTiO3/IGZO and SrTiO3/IGZO heterojunctions[J]10.1149/2162-8777/ada57c ↗
34. Precise determination of the valence-band edge in x-ray photoemission spectra: application to measurement of semiconductor interface potentials[J]10.1103/PhysRevLett.44.1620 ↗
35. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
36. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
37. Hybrid functionals based on a screened Coulomb potential[J]10.1063/1.1564060 ↗
38. Efficient hybrid density functional calculations in solids: assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional[J]10.1063/1.1760074 ↗
39. Screened hybrid density functionals applied to solids[J]10.1063/1.2187006 ↗
40. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III–V MOS devices[J]10.1021/am507287f ↗
41. Defect mechanisms, oxygen vacancy trapping ability in rare-earth doped BaTiO3 from first‐principles and thermodynamics[J]10.1111/jace.19168 ↗
42. BaTiO3-based ceramics with high energy storage density[J]10.1007/s12598-022-02175-y ↗
43. Oxidation of Ge (100) and Ge (111) surfaces: an UPS and XPS study[J]10.1016/0039-6028(94)00746-2 ↗
44. The effect of oxygen stoichiometry at the interface of epitaxial BaTiO3/La0.7Sr0.3MnO3 bilayers on its electronic and magnetic properties[J]10.1063/1.5000133 ↗
45. Understanding the electronic properties of BaTiO3 and Er3+ doped BaTiO3 films through confocal scanning microscopy and XPS: the role of oxygen vacancies[J]10.1039/D0CP01010C ↗
46. X-ray photoelectron spectroscopy study on the composition and structure of BaTiO3 thin films deposited on silicon[J]10.1016/S0169-4332(99)00495-X ↗
47. Broken-gap type-III band alignment in WTe2/HfS2 van der Waals heterostructure[J]10.1021/acs.jpcc.9b07862 ↗
48. BaTiO3 Integration with nanostructured epitaxial (100), (110), and (111) germanium for multifunctional devices[J]10.1021/am4036866 ↗
49. Self-interaction correction to density-functional approximations for many-electron systems[J]10.1103/PhysRevB.23.5048 ↗
50. Electronic and structural properties of the oxygen vacancy in BaTiO3[J]10.1063/1.3583460 ↗
51. First-principles investigation of ferroelectricity in perovskite compounds[J]10.1103/PhysRevB.49.5828 ↗
52. Lattice, elastic, polarization, and electrostrictive properties of BaTiO3 from first-principles[J]10.1063/1.3462441 ↗
53. Thermodynamics of mono-and di-vacancies in barium titanate[J]10.1063/1.2801011 ↗
54. V.B. Parmar, D. Raval, S.K. Gupta, et al., BaTiO3 perovskite for optoelectronics application: A DFT study[J], Mater. Today: Proc. 2023.10.1016/j.matpr.2023.01.410 ↗
55. Ab initio study of BaTiO3 surfaces[J]10.1103/PhysRevB.56.1625 ↗
56. ZnWO4/BiOI heterostructures with highly efficient visible light photocatalytic activity: the case of interface lattice and energy level match[J]10.1039/c3ta00442b ↗
57. First-principles study of the adsorption of 3d transition metals on BaO-and TiO2-terminated cubic-phase BaTiO3 (001) surfaces[J]10.1063/5.0008130 ↗