journal article·2025-11

High-responsivity self-powered solar-blind photodetector based on MoS2/a-InGaZnO/a-Ga2O3 heterojunction

Cong Yu, Yiming Liu, Chong Peng, Yi Zhao

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (59)

Show source-provided references
1. Vertical heterojunction photodetector with self-powered broadband response and high performance10.1016/j.cej.2023.147060 ↗
2. Booming development and present advances of two dimensional MXenes for photodetectors10.1016/j.cej.2020.126336 ↗
3. A highly sensitive single crystal perovskite-graphene hybrid vertical photodetector10.1002/smll.202000733 ↗
4. Giant negative photoresponse in van der Waals graphene/AgBiP2Se6/graphene trilayer heterostructures
5. Ga2O3 photon-controlled diode for sensitive DUV/X-Ray detection and high-resolution array imaging application10.1002/adfm.202405277 ↗
6. High-performance Ga2O3 in-memory DUV photodetectors by interface charge reservoir design for multifunctional applications10.1002/adma.202506179 ↗
7. Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation
8. Ultra-high performance amorphous Ga2O3 photodetector arrays for solar-blind imaging10.1002/advs.202101106 ↗
9. Self-Powered p-NiO/n-Ga2O3 heterojunction solar-blind photodetector with record detectivity and open circuit voltage10.1109/LED.2022.3227583 ↗
10. Ga2O3 based multilevel solar-blind photomemory array with logic, arithmetic, and image storage functions10.1039/D1MH01304A ↗
11. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
12. Review of gallium-oxide-based solar-blind ultraviolet photodetectors10.1364/PRJ.7.000381 ↗
13. Ultrasensitive 2D/3D heterojunction multicolor photodetectors: a synergy of laterally and vertically aligned 2D layered materials10.1021/acsami.8b10396 ↗
14. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices10.1038/s41928-019-0314-2 ↗
15. 2D photovoltaic devices: progress and prospects10.1002/smtd.201700294 ↗
16. Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials
17. Mixed-dimensional van der Waals heterostructures10.1038/nmat4703 ↗
18. A WSe2/β-Ga2O3 2D/3D heterojunction for self-powered solar-blind communication10.1063/5.0145228 ↗
19. MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors10.1002/adfm.201500216 ↗
20. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap10.1021/nl301485q ↗
21. Flexible, transparent, and broadband trilayer photodetectors based on MoS2/WS2 nanostructures10.1021/acsanm.2c03394 ↗
22. Nature of electronic states in atomically thin MoS2 field-effect transistors10.1021/nn202852j ↗
23. A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction10.1039/C8TC04258F ↗
24. Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics10.1016/j.apsusc.2023.157597 ↗
25. Solution-processed perovskite and oxide-semiconductor heterostructure construction for a high-performance ultraviolet photodetector10.1021/acsaelm.3c01839 ↗
26. p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity10.1016/j.cej.2023.146838 ↗
27. Amorphous Ga2O3/IGZO heterojunction thin-film solar-blind phototransistors with high responsivity10.1109/LED.2023.3296941 ↗
28. High-performance thin-film transistors with sputtered IGZO/Ga2O3 heterojunction10.1109/TED.2022.3216559 ↗
29. Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive coupled Plasma-Assistant Magnetron Sputtering10.1109/LED.2019.2896111 ↗
30. Vertically stacked vdW double heterojunction photodiode with ultrawide bandgap gallium oxide electron reservoir10.1002/adom.202200611 ↗
31. Ultrahigh EQE (15%) solar-blind UV photovoltaic detector with organic-inorganic heterojunction via dual built-in fields enhanced photogenerated carrier separation efficiency mechanism
32. Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure10.1126/sciadv.abj2521 ↗
33. Controllable p-type doping of monolayer MoS2 with tantalum by one-step chemical vapor deposition10.1039/D2TC01045C ↗
34. Achieving both positive and negative persistent photocurrent in InSe/GaSe van der Waals heterostructure by introducing amorphous Ga2O3-x10.1063/5.0173443 ↗
35. Machine learning strategy for optimizing multiple electrical characteristics in dual-layer oxide thin film transistors10.1021/acsami.4c17179 ↗
36. A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging10.1007/s12274-023-6082-3 ↗
37. Balancing carrier dynamics in oxygen-vacancy-tuned amorphous Ga2O3 thin-film self-powered photoelectrochemical-type solar-blind photodetector arrays for underwater imaging10.1002/advs.202407822 ↗
38. Amorphous molybdenum nitride thin films prepared by reactive sputter deposition10.1016/j.mseb.2004.05.010 ↗
39. Reconfigurable dipole-induced resistive switching of MoS2 thin layers on Nb:SrTiO310.1021/acsami.9b15097 ↗
40. Anomalous lattice vibrations of single- and few-layer MoS210.1021/nn1003937 ↗
41. From bulk to monolayer MoS2: evolution of Raman scattering10.1002/adfm.201102111 ↗
42. High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection10.1063/5.0089038 ↗
43. Origin of light instability in amorphous IGZO thin-film transistors and its suppression10.1038/s41598-021-94078-8 ↗
44. Present status of amorphous In-Ga-Zn-O thin-film transistors10.1088/1468-6996/11/4/044305 ↗
45. An Ultrahigh responsivity (9.7 mA W−1) self-powered solar-blind photodetector based on individual ZnO-Ga2O3 heterostructures10.1002/adfm.201700264 ↗
46. Balanced performance for β-Ga2O3 solar blind photodetectors: the role of oxygen vacancies10.1016/j.optmat.2021.110808 ↗
47. Amorphous-Ga2O3 Optoelectronic Synapses with Ultra-low Energy Consumption10.1002/aelm.202100741 ↗
48. Illuminating trap density trends in amorphous oxide semiconductors with ultrabroadband photoconduction10.1002/adfm.202300742 ↗
49. High performance indium-gallium-zinc oxide thin film transistor via interface engineering10.1002/adfm.202003285 ↗
50. D. Guo, Y. Su, H. Shi, P. Li, N. Zhao, J. Ye, S. Wang, A. Liu, Z. Chen, C. Li, W. Tang, Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction, ACS Nano 12 (12) (2018) 12827–12835. doi: 10.1021/acsnano.8b07997.10.1021/acsnano.8b07997 ↗
51. Bismuth oxychalcogenide nanosheet: facile synthesis, characterization, and photodetector application10.1002/admt.202000180 ↗
52. Ultra-low NEP and fast response self-powered broadband photodetector based on β-Ga2O3 film grown on Si and GaN substrates10.1016/j.apsusc.2025.162368 ↗
53. High Performance of zero-power-consumption MOCVD-grown β-Ga2O3-based solar-blind photodetectors with ultralow dark current and high-temperature functionalities10.1021/acsami.2c08511 ↗
54. Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability
55. Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction10.1364/OE.27.008717 ↗
56. Ti3C2/ε-Ga2O3 schottky self-powered solar-blind photodetector with robust responsivity
57. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed10.1007/s12274-021-3346-7 ↗
58. Highly sensitive full solar-blind ultraviolet spectrum detection and imaging based on PdSe2/Ga2O3 vdW heterojunction10.1364/OL.532885 ↗
59. Low-voltage, self-powered and broadband photodetector with Ohmic, transparent and cost-effective AZO electrodes on vertical aligned MoS2 flakes