journal article·2025-06

Effective removal of Si contamination at the GaN regrowth interface through in-situ etching

Haoran Qie, Hongwei Gao, Yaozong Zhong, Xiaolu Guo, Qian Sun, Tengfei Li, Yunzhe Cao, Xinchen Ge, Xinyu Sun, Fangqing Li, Xiujian Sun, Hui Yang

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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Thin-Film Transistor Technologies

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References (57)

Show source-provided references
1. Impact ionization coefficients and critical electric field in GaN10.1063/5.0050793 ↗
2. Temperature- and doping-dependent anisotropic stationary electron velocity in Wurtzite GaN10.1109/LED.2011.2164611 ↗
3. The 2018 GaN power electronics roadmap10.1088/1361-6463/aaaf9d ↗
4. GaN-based power devices: Physics, reliability, and perspectives10.1063/5.0061354 ↗
5. Towards vertical GaN-power ICs: co-integration of lateral HEMTs and vertical power CAVETs
6. 1.2 kV Vertical GaN Fin JFETs with robust avalanche and fast switching capabilities
7. 1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
8. 1200-V GaN-on-Si quasi-vertical p-n diodes10.1109/LED.2022.3219103 ↗
9. Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode10.1109/TPEL.2018.2876444 ↗
10. High-voltage and high-ION/IOFF quasi-vertical GaN-on-Si Schottky barrier diode with argon-implanted termination10.1109/LED.2021.3058380 ↗
11. MOS-structured MoS2/GaN Schottky barrier diodes with high on/off current ratio and low threshold voltage10.1063/5.0231505 ↗
12. MasatoOmori HidekiSakurai ShinjiYamada, YukihiroFurukawa, HideoSuzuki, TetsuoNarita, KeitaKataoka, MasahiroHorita, M Bockowski, JunSuda, TetsuKachi, Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing, Applied Physics Letters 115 (2019) 142104.10.1063/1.5116866 ↗
13. Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage10.1063/5.0106321 ↗
14. High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates10.1039/C7TC04478J ↗
15. Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O3 substrates by pulsed laser deposition10.1016/j.matlet.2015.12.057 ↗
16. Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition10.1016/j.matlet.2016.08.003 ↗
17. Dislocation density control of GaN epitaxial film and its photodetector10.1016/j.vacuum.2021.110800 ↗
18. Progress on and challenges of p-type formation for GaN power devices10.1063/5.0022198 ↗
19. Demonstration of 1200 V/1.4 mΩcm2 vertical GaN planar MOSFET fabricated by an all ion implantation process10.7567/1347-4065/ab6347 ↗
20. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress10.1016/j.mattod.2021.04.011 ↗
21. Demonstration of a GaN-based vertical-channel JFET fabricated by selective-area regrowth10.1109/TED.2018.2875534 ↗
22. GaN Vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD10.1109/TED.2020.3010183 ↗
23. High-Voltage Regrown Nonpolar m-Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches10.1109/LED.2019.2892345 ↗
24. Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN10.1063/5.0021374 ↗
25. 6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma10.1063/5.0242225 ↗
26. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels10.1063/1.3285309 ↗
27. Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates10.1109/TED.2021.3126270 ↗
28. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
29. Aragon A. Monavarian M. Stricklin I. Pickrell G. Crawford M. Allerman A. Armstrong A.M. Feezell D. Interfacial impurities and their electronic signatures in high-voltage regrown nonpolar m-plane GaN vertical p–n diodes, Phys. Status Solidi A. 217 2020 1900757.10.1002/pssa.201900757 ↗
30. Time-/current-dependent surge current capability of fully-vertical GaN-on-GaN PiN diode with conductivity modulation10.1109/JESTPE.2024.3446574 ↗
31. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates
32. A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same10.1088/1361-6641/ac71bf ↗
33. The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices10.1063/5.0049473 ↗
34. Etched-and-regrown GaN pn-diodes with 1600 V blocking voltage10.1109/JEDS.2021.3061028 ↗
35. In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)10.1063/1.5120420 ↗
36. A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)10.1016/j.jcrysgro.2020.125492 ↗
37. Etched-and-regrown GaN P–N diodes with low-defect interfaces prepared by in situ TBCl etching
38. Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching10.7567/JJAP.52.110127 ↗
39. Time-resolved kinetic Monte-Carlo simulation study on Si (111) etching10.1021/jp060941j ↗
40. The influence of defects on the morphology of Si (111) etched in NH4F10.1021/jp0524072 ↗
41. Stepped growth and etching of (001) diamond10.1016/0925-9635(95)00470-X ↗
42. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching10.1007/s11664-998-0406-7 ↗
43. Dislocation mediated surface morphology of GaN10.1063/1.370150 ↗
44. Li · 2023 · 215
45. Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy10.1063/1.5042572 ↗
46. Controlling the morphology transition between step-flow growth and step-bunching growth10.1016/j.jcrysgro.2017.09.007 ↗
47. Cleaning of AlN and GaN surfaces10.1063/1.368814 ↗
48. Understanding Si adsorption on GaN(0001) surfaces using first-principles calculations
49. Molecular adsorption and surface formation reactions of HCl, H2 and chlorosilanes on Si(100)-c(4 × 2) with applications for high purity silicon production10.1016/j.apsusc.2018.12.253 ↗
50. Silicon growth at low temperatures: SiH4-HCl-H2 system10.1016/0022-0248(84)90011-3 ↗
51. Crystal growth and surface structure10.1039/df9490500033 ↗
52. Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study10.1021/acs.cgd.0c00117 ↗
53. Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001) vicinal substrates10.1063/1.114398 ↗
54. A site-selective in situ study of CO adsorption and desorption on Pt(355)10.1063/1.2168441 ↗
55. First principle studies of oxygen absorption on GaN(0001) surface with steps10.1016/j.physb.2021.413528 ↗
56. Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing (10-10) m-plane GaN substrates10.7567/APEX.11.111003 ↗
57. 1.1-kV vertical GaN p-n diodes with p-GaN regrown by molecular beam epitaxy10.1109/LED.2017.2720747 ↗