Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer
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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Semiconductor materials and devices
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References (35)
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1. 1.7-kV Vertical GaN-on-GaN schottky barrier diodes with helium-implanted edge termination10.1109/TED.2022.3153594 ↗
2. Low leakage and high forward current density quasi-Vertical GaN Schottky barrier diode with post-mesa nitridation10.1109/TED.2021.3050739 ↗
3. Demonstration of Vertical GaN Schottky barrier diode with robust electrothermal ruggedness and fast switching capability by eutectic bonding and laser lift-off techniques10.1109/JEDS.2022.3222081 ↗
4. High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates10.1016/j.jcrysgro.2006.10.117 ↗
5. Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates10.1063/1.122979 ↗
6. 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V10.7567/APEX.8.071001 ↗
7. P. Zou et al., “Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy,” 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, 2023, pp. 88-90, doi: 10.1109/ISPSD57135.2023.10147551.10.1109/ISPSD57135.2023.10147551 ↗
8. Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes10.1109/LED.2018.2841959 ↗
9. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts10.1016/j.sse.2016.04.005 ↗
10. Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop10.1109/LED.2019.2915578 ↗
11. High-voltage and high-ION /IOF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination10.1109/LED.2018.2808684 ↗
12. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation10.1109/LED.2017.2720689 ↗
13. T. Horii, T. Miyazaki, Y. Saito, S. Hashimoto, T. Tanabe, and M. Kiyama, “High-breakdown-voltage GaN vertical Schottky barrier diodes with field plate structure,” Mater. Sci. Forum, vols.61561.
14. pp.963966,Mar.2009,doi:10.4028/www.scientific.net/msf.61561.963.10.1109/ISPSD46842.2020.910190.
15. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface10.1063/1.2789701 ↗
16. Analysis of atomistic dopant variation and Fermi level depinning in nanoscale contacts10.1109/TED.2017.2720183 ↗
17. H. Seo, Y. Cha, A. Bashar M. H. Islam, J. S. Kwak, “Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment,” Applied Surface Science, vol. 510, 2020, 145180, ISSN 0169-4332, doi.org/10.1016/j.apsusc.2019.145180.10.1016/j.apsusc.2019.145180 ↗
18. Low-resistance nonalloyed Ti/Al ohmic contacts on N-face n-type GaN via an O2 plasma treatment10.1109/LED.2010.2093556 ↗
19. J. W. Jeon, T.-Y. Seong, H. Kim, and K.-K. Kim, “TiN/Al ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes,” Appl. Phys. Lett., vol. 94, no. 4, pp. 042102-1–042102-3, Jan. 2009, doi.org/10.1063/1.3073887.10.1063/1.3073887 ↗
20. Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping10.1109/LED.2012.2237498 ↗
21. Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes10.1016/j.cap.2011.06.009 ↗
22. Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN10.1016/j.sse.2020.107863 ↗
23. Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer10.1109/TED.2023.3241565 ↗
24. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates10.1016/j.surfrep.2013.01.002 ↗
25. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces10.1016/j.apsusc.2014.07.200 ↗
26. Mechanistic studies of atomic layer deposition on oxidation catalysts - AlO(x) and PO(x) deposition10.1039/D0CP02572K ↗
27. Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure10.1109/TNANO.2020.3047378 ↗
28. X. Liu et al., “1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material,” Japanese Journal of Applied Physics, vol. 56, no. 2, p. 026501, 2017/01/13 2017.10.7567/JJAP.56.026501 ↗
29. Fermi-level unpinning technique with excellent thermal stability for n-type germanium10.1021/acsami.7b10346 ↗
30. Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures[J]10.1002/pssc.201100656 ↗
31. Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing10.1109/LPT.2013.2261808 ↗
32. M. Matys, K. Kitagawa, T. Narita, T. Uesugi, J. Suda, and T. Kachi, “Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage,” Applied Physics Letters, vol. 121, no. 20, 2022 doi: 10.1063/5.0106321.10.1063/5.0106321 ↗
33. Baliga · 2010 · 331
34. Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers[J]10.1063/1.1940121 ↗
35. Y. Cao, R. Chu, R. Li, M. Chen, R. Chang, and B. Hughes, “High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth,” Appl. Phys. Lett., vol. 108,no. 6, May 2016, Art. no. 062103, doi: 10.1063/1.4941814.10.1063/1.4941814 ↗