Characterization of photo-induced anomalous Hall effect in the two-dimensional MoS2
Source abstract
Abstract
Abstract We report the observation of a small but finite valley Hall effect (VHE) signal in two-dimensional MoS 2 channels which is grown on SiO 2 /Si substrates under the circularly polarized light. And the angular dependence of VHE in two-dimensional MoS 2 is studied. The VHE signal is a periodic function (period π) but with a phase shift, which confirms the presence of strong coupling between spin and valley. Furthermore, using a weak measurement under the condition of the optical circular dichroism, we find resembling beating phenomena, which suggests that a static electric field can induce oscillations. It is interesting that the interval time of the peak starts from an certain value, which is related to carrier densities. We suppose that this certain value is explained by a quasi-two-dimensional electron gas model, which is based on the Hall conductance quantized value of e 2 /h . To our knowledge, it is the first experiment that realizes such quantized values.
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Research context
OpenAlex topics: 2D Materials and Applications · Quantum and electron transport phenomena · Graphene research and applications
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References (34)
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1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets10.1038/nchem.1589 ↗
2. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides10.1103/PhysRevLett.108.196802 ↗
3. Valley-selective circular dichroism of monolayer molybdenum disulphide10.1038/ncomms1882 ↗
4. Control of valley polarization in monolayer MoS2 by optical helicity10.1038/nnano.2012.96 ↗
5. Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers10.1038/ncomms3053 ↗
6. Valley polarization in MoS2 monolayers by optical pumping10.1038/nnano.2012.95 ↗
7. The valley Hall effect in MoS2 transistors10.1126/science.1250140 ↗
8. Electrically switchable chiral light-emitting transistor10.1126/science.1251329 ↗
9. Generation and electric control of spin-valley coupled circular photogalvanic current in WSe210.1038/nnano.2014.183 ↗
10. Valley polarization in magnetically doped single-layer transition-metal dichalcogenides10.1103/PhysRevB.89.155429 ↗
11. Generation and transport of valley-polarized current in transition-metal dichalcogenides10.1103/PhysRevB.90.195428 ↗
12. A. M. Jones, H. Y Yu, N.J. Ghimire, S.F. Wu et al., Optical generation of excitonic valley coherence in monolayer WSe2, Nat. Nanotechnol. DOI: 10.1038/NNANO. 2013. 151 (2013) 1-5 Published online.
13. Experimental Observation of the quantum anomalous hall effect in a magnetic topological insulator
14. Extrinsic origin of persistent photoconductivity in monolayer MoS2 field effect transistors10.1038/srep11472 ↗
15. Highly anisotropic optical properties of single quantum well waveguides10.1063/1.96051 ↗
16. Valley-contrasting physics in graphene: magnetic moment and topological transport
17. New method for high-accuracy determination of the fine-structure constant based on quantized resistance10.1103/PhysRevLett.45.494 ↗
18. Impact of disorder on the 5/2 fractional quantum Hall state10.1103/PhysRevLett.106.206806 ↗
19. Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method10.1063/1.4922419 ↗
20. Strong light-matter interactions in Heterostructures of atomically thin films10.1126/science.1235547 ↗
21. Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature10.1016/j.physe.2007.08.142 ↗
22. Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation10.1021/acs.nanolett.5b00314 ↗
23. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces10.1021/nl400687n ↗
24. X. D. Duan, C. Wang, J.C. Shaw, R. Cheng, Y. Chen et al., Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions, Nat. Nanotechnol., DOI: 10.1038/NNANO. 2014. 222 (2014) 1-7 Published online.
25. Hysteresis in single-layer MoS2 field effect transistors
26. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
27. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform10.1038/nnano.2015.70 ↗
28. Bandgap, mid-gap states, and gating effects in MoS2,10.1021/nl501659n ↗
29. Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors10.1063/1.4914968 ↗
30. Weak measurement of qubit oscillations with strong response detectors: Violation of the fundamental bound imposed on linear detectors10.1103/PhysRevB.79.075320 ↗
31. Valley relaxation in graphene due to charged impurities10.1103/PhysRevB.92.035420 ↗
32. Gate controlled electronic transport in monolayer MoS2 field effect transistor10.1063/1.4914954 ↗
33. Ultrafast coherent electron spin flip in a modulation-doped CdTe quantumwell10.1103/PhysRevLett.102.237402 ↗
34. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures10.1021/acs.nanolett.5b01605 ↗