Research on high-quality and low-damage liquid film shearing polishing of 4H-SiC and its surface/subsurface damage evolution
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced ceramic materials synthesis · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (51)
Show source-provided references
1. Bismuthene on a SiC substrate: a candidate for a high-temperature quantum spin hall material10.1126/science.aai8142 ↗
2. Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC schottky barrier radiation detectors fabricated on 250 µm epitaxial layers10.1063/5.0049218 ↗
3. 3D-printed photocatalysts for revolutionizing catalytic conversion of solar to chemical energy10.1016/j.pmatsci.2025.101427 ↗
4. Structure-involved critical alloy design strategy for enhancing antioxidation performance of porous Fe-Cr-Al Materials10.1016/j.corsci.2024.112173 ↗
5. 3D printing of porous ceramics for enhanced thermal insulation properties
6. Piezocatalysis for chemical mechanical polishing of SiC: dual roles of t-BaTiO3 as a Piezocatalyst and an abrasive10.1002/smll.202310117 ↗
7. Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining10.1016/j.ijmachtools.2003.12.006 ↗
8. Prediction and measurement of subsurface damage thickness of silicon wafer in wire saw slicing
9. Surface micro-morphology model involved in grinding of GaN crystals driven by strain-rate and abrasive coupling effects10.1016/j.ijmachtools.2024.104197 ↗
10. Enhancing tungsten machinability via laser pretreatment for abrasive particles-based shear rheological polishing10.1016/j.powtec.2025.120758 ↗
11. Atomic-scale understanding of graphene oxide lubrication-assisted grinding of GaN crystals10.1016/j.ijmecsci.2025.109934 ↗
12. Enhanced ruthenium removal and superior surface quality via abrasive-free chemical mechanical polishing using synergistic catalysis with the H2O2/PDS/FeIII-NTA system
13. Investigation of Fenton-electrochemical oxidation behavior and polishing mechanism of SiC10.1016/j.precisioneng.2025.01.022 ↗
14. Effect of slurry and fixed abrasive pad on chemical mechanical polishing of SiC wafer10.1016/j.mssp.2024.109202 ↗
15. Z. Yang, S. Gao, Y. Sun, et al., Electric-field-modulated oxidation and its effect on photoelectrochemical mechanical polishing of 4H-SiC, Int. J. Mech. Sci. 295 (20250 110247, https://www.x-mol.com/paperRedirect/1914574483838185472.10.1016/j.ijmecsci.2025.110247 ↗
16. Magnetorheological finishing of SiC aspheric mirrors10.1081/AMP-200060417 ↗
17. Material removal and micro-roughness in fluid-assisted smoothing of reaction-bonded silicon carbide surfaces10.1016/j.jmatprotec.2008.10.046 ↗
18. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface10.1016/j.cirp.2011.03.072 ↗
19. Damage-free dry polishing of 4H-SiC combined with atmospheric-pressure water vapor plasma oxidation10.1143/JJAP.50.08JG05 ↗
20. Study on grain removal characteristics and influencing factors of polycrystalline tungsten during polishing process10.1016/j.precisioneng.2024.10.004 ↗
21. Dispersal mechanism of different dispersants and its effect on performance of 4H-SiC polishing slurry10.1016/j.ceramint.2024.11.373 ↗
22. Surface integrity and material removal mechanism in fluid jet polishing of optical glass10.1016/j.jmatprotec.2022.117798 ↗
23. Investigation on mechanism of nano-machining of single-crystal silicon carbide on non-continuous surface with diamond abrasive
24. Effect of different oxidizers on chemical mechanical polishing of 6H-SiC10.3901/JME.2018.19.224 ↗
25. Tribological behavior of 6H-SiC wafers in different chemical mechanical polishing slurries
26. Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale10.1016/j.ceramint.2018.10.175 ↗
27. Molecular dynamics study on the thickness of damage layer in multiple grinding of monocrystalline silicon10.1016/j.mssp.2016.04.013 ↗
28. Superimpose mechanism of surface generation process in grinding of monocrystalline silicon using molecular dynamics simulation10.1016/j.mssp.2022.106684 ↗
29. Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations10.1016/j.ceramint.2019.07.214 ↗
30. Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide10.1016/j.jmapro.2024.01.040 ↗
31. Material removal mechanism of 6H-SiC studied by nano-scratching with Berkovich indenter10.1007/s00339-016-9802-7 ↗
32. TiO2 and Nb2O5 content on dielectric properties of BaO-SrO-PbO-TiO2-Nb2O5-SiO2 glass-ceramics
33. Shear rheological polishing technology10.3901/JME.2022.15.021 ↗
34. Study on the effect of dispersed phase particle functional groups on the polishing performance of shear-thickening polishing slurry10.1016/j.precisioneng.2025.03.002 ↗
35. Material removal function of deterministic shear thickening polishing using wedge structure polishing tool10.1016/j.jmapro.2025.05.078 ↗
36. Dominant parameters and mechanisms influencing the electrochemical shear-thickening polishing of 4H-SiC10.1016/j.ceramint.2024.12.468 ↗
37. Electrochemical shear-thickening polishing of 4H-SiC (000-1): Factors influencing the anodization process10.1016/j.ceramint.2025.04.242 ↗
38. A novel liquid film shearing polishing technique for silicon carbide and its processing damage mechanisms10.1016/j.apsusc.2025.162317 ↗
39. Damage evolution and plastic deformation mechanism of passivation layer during shear rheological polishing of polycrystalline tungsten10.1016/j.jmrt.2023.12.122 ↗
40. A novel method of liquid film shearing polishing for achieving high-quality and low-damage polycrystalline tungsten10.1016/j.jmapro.2025.05.076 ↗
41. Liquid film shearing polishing for high quality and low damage tungsten surface: process optimization, removal mechanism, and processing defects10.1016/j.ijrmhm.2025.107189 ↗
42. A comparison between different post grinding processes on 4H-SiC wafers10.4028/p-7PDovR ↗
43. Thermal evolution of irradiation defects in ferritic/martensitic steel during isochronal annealing10.1016/j.nimb.2018.08.044 ↗
44. Exploration of vacancy defect formation and evolution in low-energy ion implanted pure titanium10.1016/j.ijhydene.2021.12.192 ↗
45. Q. Xu, T. Zhu, Z. Zhong, X. Cao, Tsuchida H. Investigation of irradiation resistance characteristics of precipitation strengthened high-entropy alloy (CoCrFeNi) 95Ti1Nb1Al3 using slow positron beam, J. Alloys. Compd. 888 (2021) 161518, https://www.x-mol.com/paperRedirect/1425225434891272192.10.1016/j.jallcom.2021.161518 ↗
46. Radiation-induced precipitates in ferritic-martensitic steels and their radiation resistance effects Mater
47. High-efficiency free-damage electrochemical shear-thickening polishing of single-crystal silicon carbide10.1016/j.jmapro.2024.10.053 ↗
48. Experimental study on shear thickening polishing of cemented carbide insert with complex shape10.1007/s00170-019-03600-w ↗
49. Facet-dependent electrical conductivity properties of a 4H-SiC wafer10.1039/D2TC01981G ↗
50. Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates10.1088/2631-7990/abc26c ↗
51. Positron studies of condensed matter10.1080/00018737300101299 ↗