Doping Mn ions at Co sites to improve resistive switching property of inverse spinel CoFe2O4 resistive random access memory devices
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Memory leads the way to better computing10.1038/nnano.2015.29 ↗
2. Self-assembled lanthanum oxide nanoflakes by electrodeposition technique for resistive switching memory and artificial synaptic devices
3. A review of resistive switching devices: performance improvement, characterization, and applications10.1002/sstr.202000109 ↗
4. Fabrication of graphene oxide-based resistive switching memory by the spray pyrolysis technique for neuromorphic computing10.1021/acsanm.2c05497 ↗
5. Memristive technologies for data storage, computation, encryption, and radio-frequency communication10.1126/science.abj9979 ↗
6. Deterministic conductive filament formation and evolution for improved switching uniformity in embedded metal-oxide-based memristors-A phase-field study10.1021/acsami.3c00371 ↗
7. Resistive switching materials for information processing10.1038/s41578-019-0159-3 ↗
8. Advances in resistive switching based memory devices10.1088/1361-6463/ab2e9e ↗
9. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
10. Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films10.1088/0022-3727/44/41/415104 ↗
11. Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors10.1039/D2NR07234C ↗
12. Stable and reliable lGZO resistive switching device with HfAlOx interfacial layer10.1088/1361-6528/acd5d8 ↗
13. Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects annealing temperatures and annealing atmospheres10.1016/j.cap.2023.02.004 ↗
14. Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application10.1016/j.mssp.2022.107059 ↗
15. Resistive switching in reactive cosputtered MFe2O4 (M = Co, Ni) films10.1016/j.apsusc.2012.09.135 ↗
16. Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances10.1021/ja305681n ↗
17. Low temperature combustion synthesis and magnetostructural properties of Co-Mn nanoferrites10.1016/j.jmmm.2013.09.020 ↗
18. Structural, morphological and magnetic properties of Sn doped CoFe2O4 nanoparticles
19. Superior photocatalytic activity of Mn-doped CoFe2O4 under visible light irradiation: Exploration of hopping and polaron formation in the spinel structure10.1016/j.mseb.2021.115222 ↗
20. Effect of CoFe2O4 layer and (Gd, Mn) co-substitution on multiferroic properties of BiFeO3 films10.1016/j.jallcom.2015.03.094 ↗
21. Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices10.1016/j.ceramint.2024.03.171 ↗
22. Effect of RF power on structural, magnetic, and optical properties of CoFe2O4 thin films10.1007/s10948-018-4680-1 ↗
23. Mesoporous nanostructured spinel-type MFe2O4 (M=Co, Mn, Ni) oxides as efficient bi-functional electrocatalysts towards oxygen reduction and oxygen evolution10.1016/j.electacta.2017.06.029 ↗
24. Optical and temperature-dependent magnetic properties of Mn-doped CoFe2O4 nanostructures
25. Hybridization state transition-driven carbon quantum dot (CQD)-based resistive switches for bionic synapses10.1039/D3MH00117B ↗
26. Metal–oxide RRAM10.1109/JPROC.2012.2190369 ↗
27. Pt/Ta2O5/HfO2-x/Ti resistive switching memory competing with multilevel NAND flash10.1002/adma.201501167 ↗
28. Graphdiyne for multilevel flexible organic resistive random access memory devices10.1039/C7QM00009J ↗
29. Resistive switching by voltage-driven ion migration in bipolar RRAM-part ll: Modeling10.1109/TED.2012.2202320 ↗
30. Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices10.1063/5.0086415 ↗
31. Design and synthesis of low temperature printed metal oxide Memristors
32. Temperature impact on the reset operation in HfO2 RRAM10.1109/LED.2015.2397192 ↗
33. The magnetic properties of Mn-doped cobalt ferrite films prepared by the spin-coating method
34. Structural, electronic and magnetic properties of manganese substituted CoFe2O4. A first-principles study10.1016/j.jmmm.2019.165862 ↗
35. Tuning of the magnetostrictive properties of CoFe2O4 by Mn substitution for Co10.1063/1.2401648 ↗
36. Enhanced gas-sensitivity and ferromagnetism performances by the Ni-doping induced oxygen vacancies in (Mn, Ni) codoped ZnO nanorods10.1016/j.apsusc.2019.06.014 ↗
37. Magnetic properties of self-assembled epitaxial nanocomposite CoFe2O4:SrTiO3 and CoFe2O4:MgO films10.1021/jp2068232 ↗
38. Mukherjee, Effect of doping of manganese ions on the structural and magnetic properties of nickel ferrite10.1016/j.jallcom.2016.01.198 ↗