journal article·2025-03Open access

Scalable flexible electrochromic devices with WO3-based ion storage layer for enhanced optical modulation and stability

Ade Satria Saloka Santosa, Nurul Kusuma Wardani, Muh Fadhil Albab, Muhammad Jahandar, Jinhee Heo, Dong Wook Chang, Soyeon Kim, Dong Chan Lim

Abstract

• WO 3 serves as a protective layer and ion storage in flexible electrochromic devices. • m-PEDOT/WO 3 structure improves optical modulation, switching times and efficiency. • Devices maintain better optical performance and stability after 500 redox cycles. • Flexible large area (1170 cm 2 ) electrochromic devices demonstrate scalability. Photo-electrochemical stability, rapid switching time, and mechanical durability are key factors in achieving high-performance flexible and large-area electrochromic (EC) devices. However, the typically used counter electrode of indium tin oxide (ITO) are prone to degradation after repeated redox cycling and reiterative bending stress. This study introduces a heterogeneous structure that incorporates modified poly(3,4-ethylenedioxythiophene) (m-PEDOT) as the organic electrochromic material and a tungsten trioxide (WO 3 ) film in the counter electrode of ITO, which serves as both an ion storage layer and a protective layer. The WO 3 -based EC devices achieved a maximum optical modulation (ΔT) of 51 % at 631 nm, significantly higher than the 17 % (ΔT) observed in devices without WO 3 . Additionally, the device demonstrated fast switching times of 1.2 s for bleaching and 6.3 s for coloring, with a high coloring efficiency of 474 cm 2 /C. Durability tests revealed a 98 % recovery in optical modulation after 500 cycles, and strong mechanical stability after 100 bending cycles. The fabrication of a 1170 cm 2 flexible device confirms the practical viability of this approach, enhancing both electrochemical and optical properties for large-scale applications such as smart windows.
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Analytical Chemistry and Sensors · Advanced Memory and Neural Computing

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