Simulation of chemical reactions with methanol and oxalic acid on 4H-SiC surfaces before and after nanoabrasion
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process10.1016/j.ceramint.2019.04.180 ↗
2. Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron10.1016/j.triboint.2024.109450 ↗
3. Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining10.1177/0954405417718595 ↗
4. Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates10.1088/2631-7990/abc26c ↗
5. Defect engineering in SiC technology for high-voltage power devices10.35848/1882-0786/abc787 ↗
6. M. Krishnan, J.W. Nalaskowski, L.M. Cook, Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms, Chemical Mechanical Planarization (n.d.).
7. Bulk and epitaxial growth of silicon carbide10.1016/j.pcrysgrow.2016.04.018 ↗
8. C.-H. Hsieh, C.-Y. Chang, Y.-K. Hsiao, C.-C.A. Chen, C.-C. Tu, H.-C. Kuo, Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies, (2022).10.3390/mi13101752 ↗
9. Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate10.3390/mi12121547 ↗
10. Investigation on diamond damaged process during a single-scratch of single crystal silicon carbide
11. Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide10.1016/j.precisioneng.2023.12.002 ↗
12. High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads10.1016/j.ceramint.2021.11.288 ↗
13. The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate
14. Polishing performance and mechanism of a novel Fe-based slurry for chemical mechanical polishing10.1016/j.triboint.2024.109549 ↗
15. S. Prasad, Chapter 11 - Engineered nanomaterials: nanofabrication and surface functionalization, (n.d.).
16. Oxidation of Silicon Carbide by O 2 and H 2 O: A ReaxFF Reactive Molecular Dynamics Study, Part I10.1021/jp306391p ↗
17. Combustion Mechanisms and Kinetics of Fuel Additives: A ReaxFF Molecular Simulation10.1021/acs.energyfuels.8b02035 ↗
18. ReaxFF molecular dynamics simulation of pyrolysis and combustion of pyridine10.1016/j.fuproc.2017.03.016 ↗
19. Investigation of N behavior during coal pyrolysis and oxidation using ReaxFF molecular dynamics10.1016/j.fuel.2018.06.133 ↗
20. Simulations on the Thermal Decomposition of a Poly(dimethylsiloxane) Polymer Using the ReaxFF Reactive Force Field10.1021/ja050980t ↗
21. Investigation of Silicon Carbide Oxidation Mechanism Using ReaxFF Molecular Dynamics Simulation10.2514/1.A34669 ↗
22. Chemical reaction on silicon carbide wafer (0 0 0 1 and 0 0 0–1) with water molecules in nanoscale polishing10.1016/j.apsusc.2022.155090 ↗
23. ReaxFF molecular dynamics simulation and experimental validation about chemical reactions of water and alcohols on SiC surface10.1016/j.ceramint.2023.11.070 ↗
24. Effects of polishing media on the surface chemical and micromechanical properties of SiC10.1016/j.commatsci.2023.112753 ↗
25. MD simulation of chemically enhanced polishing of 6H-SiC in aqueous H2O210.1016/j.jmapro.2023.10.056 ↗
26. Z. Yuan, M. Tang, Y. Wang, J. Sun, Y. He, Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution, Physica Scripta (n.d.). https://doi.org/10.1088/1402-4896/acdbf0.10.1088/1402-4896/acdbf0 ↗
27. Molecular Dynamics Simulation Studies of Properties, Preparation, and Performance of Silicon Carbide Materials: A Review10.3390/en16031176 ↗
28. Mechanistic difference between Si-face and C-face polishing of 4H–SiC substrates in aqueous and non-aqueous slurries10.1016/j.ceramint.2022.10.193 ↗
29. M.R. So/rensen, A.F. Voter, Temperature-accelerated dynamics for simulation of infrequent events, The Journal of Chemical Physics 112 (2000) 9599–9606. https://doi.org/10.1063/1.481576.10.1063/1.481576 ↗
30. Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool10.1088/0965-0393/18/1/015012 ↗
31. Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide10.1063/1.2724570 ↗
32. A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation10.1016/j.ceramint.2018.10.261 ↗
33. Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials10.1088/1361-651X/ab50c7 ↗
34. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study10.1103/PhysRevB.77.155303 ↗
35. Adsorption of methanol, formaldehyde and formic acid on the Si(100)-2×1 surface: A computational study10.1039/b100343g ↗
36. Chemistry is about energy and its changes: A critique of bond-length/bond-strength correlations10.1016/j.ccr.2017.03.002 ↗
37. Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO2 interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field10.1016/j.apsusc.2016.08.082 ↗
38. Atomistic mechanisms of Si chemical mechanical polishing in aqueous H2O2: ReaxFF reactive molecular dynamics simulations10.1016/j.commatsci.2017.02.005 ↗
39. Analytical Potential for Atomistic Simulations of Silicon, Carbon, and Silicon Carbide10.1103/PhysRevB.71.035211 ↗