Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process

1. Nano-Ridge Bending during Conformal Ruthenium Metallization: Implications for Interconnect Fabrication10.1021/acsanm.1c00773 ↗

2. Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O210.1149/2.001303jss ↗

3. Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition10.1021/cm100057y ↗

4. Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu Co, W, and Ru10.1021/acs.chemmater.8b04926 ↗

5. Thermal atomic layer deposition of metallic Ru using H2O as a reactant10.1016/j.apsusc.2019.05.242 ↗

6. Electrodeposition of Ru by atomic layer deposition (ALD)10.1016/j.electacta.2008.01.003 ↗

7. Electron mean free path in elemental metals10.1063/1.4942216 ↗

8. Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition

9. Charge storage characteristics of atomic layer deposited RuOx nanocrystals

10. Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition10.1002/smll.200801074 ↗

11. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications10.1063/1.2338793 ↗

12. Cut-hole layout decomposition and synthesis to reduce the effect of edge-placement errors10.1016/j.mee.2016.03.048 ↗

13. B. D. Briggs, C. B. Peethala, D. L. Rath, J. Lee, S. Nguyen, N. V. LiCausi, P. S. McLaughlin, H. You, D. Sil, N. A. Lanzillo, H. Huang, R. Patlolla, T. Haigh Jr, Y. Xu, C. Park, P. Kerber, H. K. Shobha, Y. Kim, J. Demarest, J. Li, G. Lian, M. Ali, C. Le, E. T. Ryan, L. A. Clevenger, D. F. Canaperi, T. E. Standaert, G. Bonilla, E. Huang, Fully Aligned Via Integration for Extendibility of Interconnects to Beyond the 7 nm Node. In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017, pp. 14.2.1-14.2.4, Doi: 10.1109/IEDM.2017.8268388.10.1109/IEDM.2017.8268388 ↗

14. A. Raley, N. Mohanty, X. Sun, R. A. Farrell, J. T. Smith, A. Ko, A. W. Metz, P. Biolsi, A. Devilliers, Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning. In SPIE Advanced Lithography, 2017, San Jose, California, USA, 2017, 101490O, Doi: 10.1117/12.2257769.10.1117/12.2257769 ↗

15. Dry Etching Damage of Silicon: A Review10.1016/0921-5107(89)90284-5 ↗

16. Plasma etching: Yesterday, today, and tomorrow10.1116/1.4819316 ↗

17. Pulsed high-density plasmas for advanced dry etching processes10.1116/1.4716176 ↗

18. Dry Etching of Electronic Oxides, Polymers, and Semiconductors10.1002/ppap.200400035 ↗

19. High aspect ratio silicon etch: A review10.1063/1.3474652 ↗

20. The grand challenges of plasma etching: a manufacturing perspective10.1088/0022-3727/47/27/273001 ↗

21. Pulsed plasma etching for semiconductor manufacturing10.1088/0022-3727/47/30/303001 ↗

22. Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation10.1016/j.apsusc.2022.153604 ↗

23. Plasma cryogenic etching of silicon: from the early days to today’s advanced technologies10.1088/0022-3727/47/12/123001 ↗

24. Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma10.1063/1.4927731 ↗

25. Atomic Layer Etching: An Industry Perspective10.1149/2.0021506jss ↗

26. Physical and chemical effects in directional atomic layer etching10.1088/1361-6463/ab6d94 ↗

27. Radical flux control in reactive ion beam etching (RIBE) by dual exhaust system10.1016/j.apsusc.2021.151311 ↗

28. Layer-controlled thinning of black phosphorus by an Ar ion beam10.1039/C7TC03101G ↗

29. Etch characteristics of magnetic tunnel junction materials using H2/NH3 reactive ion beam10.1088/1361-6528/abb04e ↗

30. Anisotropic atomic layer etching of W using fluorine radicals/oxygen ion beam10.1002/ppap.201900081 ↗

31. Study on etch characteristics of magnetic tunnel junction materials using rf-biased H2/NH3 reactive ion beam10.1116/6.0002465 ↗

32. The 2022 Plasma Roadmap: low temperature plasma science and technology10.1088/1361-6463/ac5e1c ↗

33. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?10.1149/2.0051506jss ↗

34. Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma10.1021/acsami.8b12767 ↗

35. Mechanisms of Thermal Atomic Layer Etching10.1021/acs.accounts.0c00084 ↗

36. Atomic Layer Etching at the Tipping Point: An Overview10.1149/2.0061506jss ↗

37. Atomic layer etching of Sn by surface modification with H and Cl radicals10.1088/1361-6528/ac9981 ↗

38. Mechanism of SiN etching rate fluctuation in atomic layer etching10.1116/6.0000257 ↗

39. Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching10.1149/2.0111506jss ↗

40. Highly Selective Directional Atomic Layer Etching of Silicon10.1149/2.0031506jss ↗

41. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control10.1116/1.4944850 ↗

42. Molecular dynamics simulation of atomic layer etching of silicon10.1116/1.579659 ↗

43. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma10.1116/1.4843575 ↗

44. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma10.1116/1.4935462 ↗

45. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride10.1021/nn507277f ↗

46. Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential

47. Self-Limiting Temperature Window for Thermal Atomic Layer Etching of HfO2 and ZrO2 Based on the Atomic-Scale Mechanism10.1021/acs.chemmater.9b05021 ↗

48. Atomic Layer Etching of HfO2 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and HF10.1149/2.0041506jss ↗

49. Atomic layer etching of InGaAs by controlled ion beam10.1088/1361-6463/aa70c8 ↗

50. Anisotropic/Isotropic Atomic Layer Etching of Metals10.5757/ASCT.2020.29.3.041 ↗

51. Direct metal etch of ruthenium for advanced interconnect10.1116/1.5022283 ↗

52. Etching of ruthenium coatings in O2- and Cl2- containing plasmas10.1116/1.2121751 ↗

53. Anisotropic etching of RuO2 and Ru with high aspect ratio for gigabit dynamic random access memory10.1116/1.1303812 ↗

54. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture10.1016/j.tsf.2014.12.031 ↗

55. Vacuum ultraviolet enhanced atomic layer etching of ruthenium films10.1116/6.0000742 ↗

56. Electrochemical Atomic Layer Etching of Ruthenium10.1149/1945-7111/ab864b ↗

57. Overview of atomic layer etching in the semiconductor industry10.1116/1.4913379 ↗

58. Predicting synergy in atomic layer etching10.1116/1.4979019 ↗

59. Atomic Layer Etching: Rethinking the Art of Etch10.1021/acs.jpclett.8b00997 ↗

60. http://chemister.ru/Databases/Chemdatabase/search-en.php.

61. Matus · 2002

62. Thermodynamic Behaviour of Ruthenium at High Temperatures

63. Gaseous Phase above Ru-O System: a Thermodynamic Data Assessment10.1016/j.calphad.2021.102329 ↗