Optimized chalcogenide medium for inherently activated resistive switching device
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Abstract
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials
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References (50)
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1. In-memory computing with resistive switching devices, Nat
2. Resistive switching materials for information processing10.1038/s41578-019-0159-3 ↗
3. Resistive switching crossbar arrays based on layered materials10.1002/adma.202205402 ↗
4. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
5. Iodine vacancy redistribution in organic-inorganic halide perovskite films and resistive switching effects10.1002/adma.201700527 ↗
6. Effect of program/erase speed on switching uniformity in filament-type RRAM10.1109/LED.2011.2147274 ↗
7. Nonvolatile resistive switching memories-charateristics, mechanisms and challenges10.1016/S1002-0071(12)60001-X ↗
8. Conductive bridge random access memory (CBRAM): Challenges and opportunities for memory and neuromorphic computing applications10.3390/mi13050725 ↗
9. Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays10.1038/s41467-018-07682-0 ↗
10. Understanding of selector-less 1S1R type Cu-based CBRAM devices by controlling sub-quantum filament10.1002/aelm.202000488 ↗
11. Highly uniform resistive switching in HfO2 films embedded with ordered metal nanoisland arrays10.1002/adfm.201808430 ↗
12. Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals10.1063/1.3193656 ↗
13. Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior10.1063/1.3525801 ↗
14. W. Banerjee, S. Maikap, C.-S. Lai, Y.-Y. Chen, T.-C. Tien, H.-Y. Lee, W.-S. Chen, F.T. Chen, M.-J. Kao, M.-J. Tsai, J.-R. Yang, Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3nm) core-shell IrOx nano-dots, Nanoscale Res. Lett. 7 (2012) 194, https://doi:10.1186/1556-276X-7-194.10.1186/1556-276X-7-194 ↗
15. Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2 – x/TiO2 – y-based bilayer structures10.1063/1.5094242 ↗
16. Toward Controlling Filament Size and Location for Resistive Switches via Nanoparticle Exsolution at Oxide Interfaces10.1002/smll.202003224 ↗
17. Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films10.3390/nano8110869 ↗
18. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode10.1021/nn1017582 ↗
19. Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles10.1088/0022-3727/44/45/455305 ↗
20. Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters10.1039/c3nr33692a ↗
21. Nanometer-Scale HfOx RRAM10.1109/LED.2013.2265404 ↗
22. On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy10.1109/TED.2012.2184544 ↗
23. Wong · Metal–Oxide RRAM, Proc. IEEE · 2012 · 100 · 1951
24. Linear Scaling of Reset Current Down to 22-nm Node for a Novel CuxSiyO RRAM10.1109/LED.2011.2170654 ↗
25. The Role of Ti Capping Layer in HfOx-Based RRAM Devices10.1109/LED.2014.2334311 ↗
26. C. Cagli, J. Buckley, V. Jousseaume, T. Cabout, A. Salaun, H. Grampeix, J.F. Nodin, H. Feldis, A. Persico, J. Cluzel, P. Lorenzi, L. Massari, R. Rao, F. Irrera, F. Aussenac, C. Carabasse, M. Coue, P. Calka, E. Martinez, L. Perniola, P. Balaise, Z. Fang, Y.H. Yu, G. Ghibaudo, D. Deleruyulle, M. Bocqet, C. Müller, A. Padovani, O. Pirrotta, L. Vandelli, L. Larcher, G. Reimbold, B. Salvo, Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM, 2011 IEDM , Washington, DC, USA, 05-07 December 2011. https://doi:10.1109/IEDM.2011.6131634.10.1109/IEDM.2011.6131634 ↗
27. Enhanced resistive switching characteristics in Al2O3 memory devices by embedded Ag nanoparticles10.1088/1361-6528/aa6cd0 ↗
28. Effect of Annealing on Morphological, Structural and Electrical Characteristics of Zinc Oxide Layer for RRAM Applications10.1149/2162-8777/ac5a6e ↗
29. K. Tahara, K. Toprasertpong, Y. Hikosaka, K. Nakamura, H. Saito, M. Takenaka, S. Takagi, Strategy Toward HZO BEOL-FeRAM with Low-Voltage Operation (≤ 1.2 V), Low Process Temperature, and High Endurance by Thickness Scaling, Dig. Tech. Pap. - Symp. VLSI Technol. Kyoto, Japan (2021). https://ieeexplore.ieee.org/abstract/document/9508700.
30. Resistive switching memories based on metal oxides: Mechanisms, reliability and scaling
31. Thermoelectric Transport in Cu7PSe6 with High Copper Ionic Mobility10.1021/ja5056092 ↗
32. Heterogeneous Crystallization of the Phase Change Material GeTe via Atomistic Simulations10.1021/acs.jpcc.5b00296 ↗
33. Temperature dependent evolution of local structure in chalcogenide-based superlattices10.1016/j.apsusc.2020.147959 ↗
34. Ultrafast exciton transport at early times in quantum dot solids10.1038/s41563-022-01204-6 ↗
35. Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer10.1016/j.tsf.2012.10.096 ↗
36. Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition10.1039/D2TC03656H ↗
37. What happens when transition metal trichalcogenides are interfaced with gold?10.1557/s43578-022-00744-6 ↗
38. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe10.1063/1.4906332 ↗
39. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications10.1063/1.4898062 ↗
40. Shalvoy · Phys. Rev. B · 1977 · 15 · 168010.1103/PhysRevB.15.1680 ↗
41. Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials10.1016/j.jpcs.2007.02.027 ↗
42. MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires10.3390/coatings11060718 ↗
43. Electronic structure of aluminum and aluminum-noble-metal alloys studied by soft-x-ray and x-ray photoelectron spectroscopies10.1103/PhysRevB.16.750 ↗
44. Y.Z. Zhang, F.R. Liu, W.Q. Li, Y. Huang, Local structure and optical property of GeTe@Cu composite thin film, 14th National Conference on Laser Technology and Optoelectronics, 1117018 (2019). https://doi.org/10.1117/12.2532974.10.1117/12.2532974 ↗
45. Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material10.1016/j.scriptamat.2012.09.028 ↗
46. Effect of Cu doping on microstructure and thermal stability of Ge2Sb2Te5 thin film10.1007/s00339-019-2865-5 ↗
47. Radio frequency sputtered films of copper-doped zinc telluride10.1016/j.cplett.2021.138358 ↗
48. Low-temperature electrical resistivity of cupric telluride (CuTe) thin films10.1002/pssb.200743111 ↗
49. Nanosecond threshold switching of GeTe6 cells and their potential as selector devices10.1063/1.3700743 ↗
50. Te-based chalcogenide materials for selector applications10.1038/s41598-017-08251-z ↗