journal article·2022-10

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

Mauro Boero, Kieu My Bui, Kenji Shiraishi, Kana Ishisone, Yoshihiro Kangawa, Atsushi Oshiyama

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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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References (35)

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