journal article·2025-02

WOx-driven growth of 2H- and 3R-WS2 multilayers by physical vapor deposition

Yeonjoon Jung, Donghoon Moon, Jaewoong Joo, Jungcheol Kim, Siwon Oh, Hyeongseok Lee, Jinwoo Kim, Hangyel Kim, Huije Ryu, Seong Chul Hong, Ji-Hwan Baek, Namwon Kim, Hyeonsik Cheong, Gwan-Hyoung Lee

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (35)

Show source-provided references
1. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
2. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
4. Progress, challenges, and opportunities in two-dimensional materials beyond graphene10.1021/nn400280c ↗
5. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides10.1038/nphoton.2015.282 ↗
6. 3R phase of MoS2 and WS2 outperforms the corresponding 2H phase for hydrogen evolution10.1039/C6CC09952A ↗
7. Modulation of electronic properties from stacking orders and spin-orbit coupling for 3R-type MoS210.1038/srep24140 ↗
8. Stacking order and driving forces in the layered charge density wave phase of 1T-MX2 (M = Nb, Ta and X = S, Se)10.1088/2053-1591/acc997 ↗
9. Controllable growth of wafer-scale two-dimensional WS2 with outstanding optoelectronic properties
10. Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy
11. Controlled growth of atomically thin MoSe2 films and nanoribbons by chemical vapor deposition10.1088/2053-1583/aaf9cc ↗
12. Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures10.1021/acsnano.0c00088 ↗
13. Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride10.1038/s41467-020-20667-2 ↗
14. Atomic reconstruction in twisted bilayers of transition metal dichalcogenides10.1038/s41565-020-0682-9 ↗
15. Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers10.1038/s41563-023-01690-2 ↗
16. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides10.1038/s41565-021-01059-z ↗
17. Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals10.1126/science.ado6038 ↗
18. Stack growth of wafer-scale van der waals superconductor heterostructures10.1038/s41586-023-06404-x ↗
19. Identification of individual and few layers of WS2 using Raman spectroscopy10.1038/srep01755 ↗
20. Chemical vapor deposition growth of monolayer WSe2 with tunable device characteristics and growth mechanism study10.1021/acsnano.5b01301 ↗
21. controlled vapor growth and nonlinear optical applications of large-area 3R phase WS2 and WSe2 atomic layers10.1002/adfm.201806874 ↗
22. High-mobility multilayered MoS2 flakes with low contact resistance grown by chemical vapor deposition10.1002/adma.201604540 ↗
23. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy10.1038/s41467-019-08468-8 ↗
24. Atomically phase-matched second-harmonic generation in a 2D crystal10.1038/lsa.2016.131 ↗
25. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers10.1038/ncomms5966 ↗
26. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices10.1126/sciadv.ade5706 ↗
27. The O-W (oxygen-tungsten) system10.1007/BF02877593 ↗
28. Review on the Versatility of Tungsten Oxide Coatings10.1002/pssa.201900047 ↗
29. A new facile synthesis of tungsten oxide from tungsten disulfide: structure dependent supercapacitor and negative differential resistance properties10.1002/smll.201702881 ↗
30. Initial stage of atomic layer deposition of 2D-MoS2 on a SiO2 surface: a DFT study10.1039/C8CP00210J ↗
31. Self-limiting growth of monolayer tungsten disulfide nanoribbons on tungsten oxide nanowires10.1021/acsnano.3c01608 ↗
32. Nucleation and growth of monolayer MoS2 at multisteps of MoO2 crystals by sulfurization10.1021/acsnano.3c01150 ↗
33. Self-expanding molten salt-driven growth of patterned transition-metal dichalcogenide crystals10.1021/jacs.2c02518 ↗
34. Wetting of mono and few-layered WS2 and MoS2 films supported on Si/SiO2 substrates10.1021/nn5072073 ↗
35. Motions of droplets on solid surfaces induced by chemical or thermal gradients10.1021/la00086a025 ↗