Functionalizing self-assembled monolayers to reduce interface scattering in ruthenium/dielectric for next-generation microelectronic interconnects
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OpenAlex topics: Molecular Junctions and Nanostructures · Semiconductor materials and devices · Semiconductor materials and interfaces
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References (79)
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1. Gardner, Influence of line dimensions on the resistance of Cu interconnections10.1109/55.735762 ↗
2. Electron mean free path in elemental metals10.1063/1.4942216 ↗
3. Influence of the electron mean free path on the resistivity of thin metal films10.1016/j.mee.2004.07.041 ↗
4. K. Croes, Ch. Adelmann, C.J. Wilson, H. Zahedmanesh, O.V. Pedreira, C. Wu, A. Lesniewska, H. Oprins, S. Beyne, I. Ciofi, D. Kocaay, M. Stucchi, Zs. Tokei, Interconnect metals beyond copper: reliability challenges and opportunities, in: 2018 IEEE International Electron Devices Meeting (IEDM), IEEE, San Francisco, CA, 2018, p. 5.3.1-5.3.4. https://doi.org/10.1109/IEDM.2018.8614695.10.1109/IEDM.2018.8614695 ↗
5. The search for the most conductive metal for narrow interconnect lines10.1063/1.5133671 ↗
6. Y. Shacham-Diamand, T. Osaka, M. Datta, T. Ohba (Eds.), Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications, Springer New York, New York, NY, 2009. https://doi.org/10.1007/978-0-387-95868-2.10.1007/978-0-387-95868-2 ↗
7. D. Edelstein, C. Uzoh, C. Cabral, P. DeHaven, P. Buchwalter, A. Simon, E. Cooney, S. Malhotra, D. Klaus, H. Rathore, B. Agarwala, D. Nguyen, A high performance liner for copper damascene interconnects, in: Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), IEEE, Burlingame, CA, USA, 2001: pp. 9–11. https://doi.org/10.1109/IITC.2001.930001.10.1109/IITC.2001.930001 ↗
8. Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature10.1002/adma.201902397 ↗
9. Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling10.1063/5.0013737 ↗
10. Impact of Wire Geometry on Interconnect RC and Circuit Delay10.1109/TED.2016.2554561 ↗
11. Area-Selective Deposition of Tantalum Nitride with Polymerizable Monolayers: From Liquid to Vapor Phase Inhibitors10.1021/acs.chemmater.1c03436 ↗
12. Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology10.1038/s41699-017-0044-0 ↗
13. MoS 2 for Enhanced Electrical Performance of Ultrathin Copper Films10.1021/acsami.9b03381 ↗
14. Enhanced Electrical and Thermal Conduction in Graphene-Encapsulated Copper Nanowires10.1021/nl504889t ↗
15. Effect of temperature on graphene grown by chemical vapor deposition10.1007/s10853-017-1054-1 ↗
16. S. Vollebregt, H. Schellevis, K. Beenakker, R. Ishihara, Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst, in: 2013 IEEE International Interconnect Technology Conference - IITC, IEEE, Kyoto, Japan, 2013: pp. 1–3. https://doi.org/10.1109/IITC.2013.6615602.10.1109/IITC.2013.6615602 ↗
17. Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials10.3390/nano12203548 ↗
18. Large-Area, Single-Layer Molybdenum Disulfide Synthesized at BEOL Compatible Temperature as Cu Diffusion Barrier10.1109/LED.2018.2827061 ↗
19. Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials10.1146/annurev-matsci-070214-020901 ↗
20. Low-Temperature Growth of 2D-MoS2 Thin Films by Plasma-Enhanced Atomic Layer Deposition Using a New Molybdenum Precursor and Applicability to Gas Sensors10.1021/acsanm.3c01887 ↗
21. Atomic Layer Deposition on 2D Materials10.1021/acs.chemmater.6b05103 ↗
22. Scalable low-temperature synthesis of two-dimensional materials beyond graphene10.1088/2515-7639/abbdb1 ↗
23. Resistivity scaling due to electron surface scattering in thin metal layers10.1103/PhysRevB.97.165406 ↗
24. Ni doping on Cu surfaces: Reduced copper resistivity10.1063/1.4897009 ↗
25. Electron channeling in TiO 2 coated Cu layers
26. Copper Interconnects: Surface State Engineering to Facilitate Specular Electron Scattering10.1109/TED.2019.2910500 ↗
27. Impact of bonding at multi-layer graphene/metal Interfaces on thermal boundary conductance10.1039/C4RA03585B ↗
28. Comparative study of solution–phase and vapor–phase deposition of aminosilanes on silicon dioxide surfaces10.1016/j.msec.2013.11.017 ↗
29. How To Prepare Reproducible, Homogeneous, and Hydrolytically Stable Aminosilane-Derived Layers on Silica10.1021/la203638g ↗
30. Coupled self-assembled monolayer for enhancement of Cu diffusion barrier and adhesion properties10.1039/C4RA08134J ↗
31. Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization10.1063/1.1365418 ↗
32. A. Maestre Caro, G. Maes, G. Borghs, C.M. Whelan, Screening self-assembled monolayers as Cu diffusion barriers, Microelectronic Engineering. 85 (2008) 2047–2050. https://doi.org/10.1016/j.mee.2008.04.014.10.1016/j.mee.2008.04.014 ↗
33. Robust self-assembled monolayer as diffusion barrier for copper metallization10.1063/1.1635665 ↗
34. C.-L. Lo, K. Zhang, J.A. Robinson, Z. Chen, BEOL compatible sub-nm diffusion barrier for advanced Cu interconnects, in: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), IEEE, Hsinchu, 2018, pp. 1–2. https://doi.org/10.1109/VLSI-TSA.2018.8403818.10.1109/VLSI-TSA.2018.8403818 ↗
35. Bottom-Up Engineering of Subnanometer Copper Diffusion Barriers Using NH2-Derived Self-Assembled Monolayers10.1002/adfm.200902072 ↗
36. Nucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayers10.1016/j.apsusc.2018.08.029 ↗
37. Organosiloxane Monolayers Terminated with Amine Groups as Adhesives for Si Metallization10.1021/acsanm.0c00430 ↗
38. Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects10.1016/j.apsusc.2023.157440 ↗
39. Role of trialkoxysilane functionalization in the preparation of organic-inorganic composites10.1021/cm00034a014 ↗
40. Two methods for glass surface modification and their application in protein immobilization10.1016/j.colsurfb.2007.06.018 ↗
41. Effects of surface hydration on the deposition of silane monolayers on silica10.1021/la00031a023 ↗
42. Structure and reactivity of alkylsiloxane monolayers formed by reaction of alkyltrichlorosilanes on silicon substrates10.1021/la00088a035 ↗
43. Nanoscale adhesion, friction and wear studies of biomolecules on silane polymer-coated silica and alumina-based surfaces10.1098/rsif.2008.0398 ↗
44. Mittheilungen aus dem Universitätslaboratorium in Pisa: Eine neue Reihe organischer Basen10.1002/jlac.18641310113 ↗
45. A novel Schiff base-containing branched polysiloxane as a self-crosslinking flame retardant for PA6 with low heat release and excellent anti-dripping performance10.1016/j.compositesb.2019.107684 ↗
46. Modeling charge transport in C 60-based self-assembled monolayers for applications in field-effect transistors10.1063/1.4876035 ↗
47. Characterization of the Interface Dipole at Organic/ Metal Interfaces10.1021/ja025673r ↗
48. Authentication of Bitter Almond Oil and Cinnamon Oil: Application of the SNIF-NMR Method to Benzaldehyde10.1021/jf970143d ↗
49. UV/Ozone-Assisted Rapid Formation of High-Quality Tribological Self-Assembled Monolayer10.3390/coatings9110762 ↗
50. Impact of SiO 2 surface composition on trimethylsilane passivation for area-selective deposition10.1039/C9TC04091A ↗
51. How To Prevent the Loss of Surface Functionality Derived from Aminosilanes10.1021/la802234x ↗
52. Study of thermally grown and photo-CVD deposited silicon oxide–silicon nitride stack layers10.1088/0268-1242/18/7/312 ↗
53. Towards coloured glazed thermal solar collectors10.1016/j.solmat.2004.02.042 ↗
54. Local atomic and electronic structure of oxide/GaAs and SiO 2 /Si interfaces using high-resolution XPS10.1116/1.570218 ↗
55. A Non-Oxidative Approach Towards Hybrid Silicon Nanowire- Based Solar Cell Heterojunctions10.2478/hyma-2013-0002 ↗
56. XPS study on the dispersion of carbon additives in silicon carbide powders10.1016/0169-4332(91)90400-E ↗
57. Formation of C-N thin films by ion beam deposition10.1116/1.579528 ↗
58. Correlation of the Nitrogen 1s and Oxygen 1s XPS Binding Energies with Compositional Changes During Oxidation of Ethylene Diamine Plasma Polymers10.1002/(SICI)1096-9918(19960916)24:9<611::AID-SIA169>3.0.CO;2-7 ↗
59. Ambient-ageing processes in amine self-assembled monolayers on microarray slides as studied by ToF-SIMS with principal component analysis, XPS, and NEXAFS spectroscopy10.1007/s00216-012-5862-5 ↗
60. Determination of amino groups on functionalized graphene oxide for polyurethane nanomaterials: XPS quantitation vs. functional speciation10.1039/C6RA28745J ↗
61. Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon10.1016/j.apsusc.2015.12.052 ↗
62. Quantification of Silane Molecules on Oxidized Silicon: Are there Options for a Traceable and Absolute Determination?10.1021/acs.analchem.5b02846 ↗
63. Angle-Resolved XPS Analysis and Characterization of Monolayer and Multilayer Silane Films for DNA Coupling to Silica10.1021/la304719y ↗
64. M.R. Alexander, R.D. Short, F.R. Jones, W. Michaeli, C.J. Blomfield, A study of HMDSOrO2 plasma deposits using a high-sensitivity and -energy resolution XPS instrument: curve fitting of the Si 2p core level, 1999.10.1016/S0169-4332(98)00479-6 ↗
65. Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas10.1116/1.1635392 ↗
66. A facile and versatile approach to design self-assembled monolayers on glass using thiol–ene chemistry10.1039/c2cc38425f ↗
67. Advances in time-of-flight secondary ion mass spectrometry analysis of protein films10.1002/sia.2382 ↗
68. K. Sakuma, K. Toriyama, H. Noma, K. Sueoka, N. Unami, J. Mizuno, S. Shoji, Y. Orii, Fluxless bonding for fine-pitch and low-volume solder 3-D interconnections, in: 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), IEEE, Lake Buena Vista, FL, USA, 2011, pp. 7–13. https://doi.org/10.1109/ECTC.2011.5898483.10.1109/ECTC.2011.5898483 ↗
69. Flexible high-efficiency CZTSSe solar cells on stainless steel substrates10.1039/C9TA08265D ↗
70. Electron scattering at surfaces and grain boundaries in Cu thin films and wires10.1103/PhysRevB.84.235423 ↗
71. Thickness dependence of the resistivity of platinum-group metal thin films10.1063/1.4992089 ↗
72. On the enhanced grain growth in ultrafine grained metals10.1016/0956-7151(95)00087-C ↗
73. Electrodeposited ruthenium oxide thin films for supercapacitor: Effect of surface treatments10.1016/j.apsusc.2008.11.005 ↗
74. Induced Density of States model for weakly-interacting organic semiconductor interfaces10.1016/j.orgel.2006.07.006 ↗
75. Adsorption of Amine Compounds on the Au(111) Surface: A Density Functional Study10.1021/jp072494t ↗
76. First-principles theoretical study of organic/metal interfaces: Vacuum level shifts and interface dipoles10.1016/j.cap.2012.06.021 ↗
77. Vacuum level alignment at organic/metal junctions: “Cushion” effect and the interface dipole10.1063/1.2151253 ↗
78. Energy level alignment at interfaces of organic semiconductor heterostructures10.1063/1.368864 ↗
79. Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic Interfaces10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q ↗