Preparation and optical properties of higher manganese silicide, (Mn,Fe)Si , thin films
Source abstract
Abstract
Abstract In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSiγ and (Mn,Fe)Siγ, were investigated. Band structure calculations were performed using the Mn11Si19 and (Mn31/44Fe13/44)11Si19 crystal structure models of HMS to predict the conduction types and band gaps of MnSiγ and Mn0.7Fe0.3Siγ, respectively. Using a pulsed laser deposition method, p-type MnSiγ and n-type Mn0.7Fe0.3Siγ thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSiγ thin film and 0.83(2) eV for the Mn0.7Fe0.3Siγ thin film. These results demonstrate the potential of (Mn,Fe)Siγ-based near-infrared absorption solar cells.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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