Optimization of measurement parameters in Doppler broadening spectroscopy

Abstract The choice of regions of interest (ROIs) in the annihilation gamma line spectrum, which define the S and W parameters commonly used in the study of vacancy-type defects in Si, has been optimized by simulations using theoretical Doppler-broadened spectra. The figure of merit used is the difference between the S ( W ) parameter and its value in bulk Si expressed as multiple of the standard deviation in S ( W ). The optimum ROIs depend on the crystalline orientation of the Si and the energy resolution of the gamma ray detector used. Experimental data on B + -implanted Si were found to be consistent with the simulation results, which can therefore be used reliably to guide further experimental work.