journal article·2024-08

Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications

Han-Bin Chen, Chia-Hsun Hsu, Wan-Yu Wu, Wen-Zhi Zhang, Jing Zhang, Xiao-Ying Zhang, Peng Gao, Dong-Sing Wuu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (64)

Show source-provided references
1. Epitaxial ferroelectric HfO2 films: growth, properties, and devices10.1021/acsaelm.1c00110 ↗
2. Performance of H-diamond MOSFETs with high temperature ALD grown HfO2 dielectric10.1016/j.diamond.2020.107846 ↗
3. HfO 2 -based resistive switching memory devices for neuromorphic computing10.1088/2634-4386/ac9012 ↗
4. Influence of efficient thickness of antireflection coating layer of HfO2 for crystalline silicon solar cell10.3390/inorganics10100171 ↗
5. HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition10.1016/j.jallcom.2020.157875 ↗
6. Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters10.1039/C8RA07813K ↗
7. Bulk and interfacial oxygen defects in HfO2 gate dielectric stacks: a critical assessment10.1149/1.2779564 ↗
8. Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors10.1039/C5TC02485D ↗
9. Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations10.7567/APEX.9.071302 ↗
10. High performance black phosphorus electronic and photonic devices with HfLaO dielectric10.1109/LED.2017.2779877 ↗
11. Si Doped hafnium oxide-A “Fragile” ferroelectric system10.1002/aelm.201700131 ↗
12. Impact of La concentration on ferroelectricity of La-doped HfO2 epitaxial thin films10.1021/acsaelm.1c00672 ↗
13. Energy-band alignment of (HfO 2) x (Al 2 O 3) 1–x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201)10.1016/j.apsusc.2017.10.075 ↗
14. Dielectric, energy storage, and loss study of antiferroelectric-like Al-doped HfO2 thin films10.1063/5.0029706 ↗
15. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition10.1016/j.spmi.2016.07.032 ↗
16. Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric10.1063/1.3007978 ↗
17. Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy10.1016/j.jallcom.2017.05.018 ↗
18. Mesostructured HfxAlyO2 thin films as reliable and robust gate dielectrics with tunable dielectric constants for high-performance graphene-based transistors10.1021/acsnano.6b01734 ↗
19. Band offsets and interfacial properties of HfAlO gate dielectric grown on InP by atomic layer deposition10.1186/s11671-017-2104-y ↗
20. Atomic-layer-deposited (HfO 2) 1–x (Al 2 O 3) x nanolaminate films on InP with different Al 2 O 3 contents10.1088/0022-3727/46/27/275301 ↗
21. Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature10.1016/j.jallcom.2016.08.289 ↗
22. Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex10.1063/1.2201887 ↗
23. Electrical characteristics and interface structure of HfAlO∕SiON∕Si(001) stacks10.1063/1.2715112 ↗
24. Polymer-assisted deposition of Al-Doped HfO2 thin film with excellent dielectric properties10.1002/admi.201900588 ↗
25. Development of high-k hafnium–aluminum oxide dielectric films using sol–gel process10.1557/jmr.2014.186 ↗
26. Superior bipolar resistive switching behaviors of solution-processed HfAlO x thin film for nonvolatile memory applications10.7567/JJAP.53.08NE03 ↗
27. M.K. Hota, C. Mahata, S. Mallik, B. Majhi, T. Das, C.K. Sarkar, C.K. Maiti, Characterization of RF Sputter Deposited HfAlOx Dielectrics for MIM Capacitor Applications, (n.d.).
28. Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)10.1063/1.2743818 ↗
29. Silver-insertion induced improvements in dielectric characteristics of the Hf-based film10.1016/j.jallcom.2013.05.125 ↗
30. Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition10.1116/1.2091096 ↗
31. A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
32. Characterization of Al Incorporation into HfO(2) Dielectric by Atomic Layer Deposition
33. Tailoring the Electrical Properties of HfO2 MOS-devices by aluminum doping10.1021/acsami.5b03071 ↗
34. Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications10.1063/1.4984068 ↗
35. Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films10.1016/j.apsusc.2022.154039 ↗
36. Doping ferroelectric hafnium oxide by in-situ precursor mixing10.1021/acsaelm.9b00591 ↗
37. New development of atomic layer deposition: processes, methods and applications10.1080/14686996.2019.1599694 ↗
38. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends10.1063/1.4757907 ↗
39. Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films10.1149/1.3428705 ↗
40. Ozone-based atomic layer deposition of alumina from TMA: growth, morphology, and reaction mechanism10.1021/cm0608903 ↗
41. Crystallinity effect on electrical properties of PEALD-HfO(2) thin films prepared by different substrate temperatures
42. The doping effect on the intrinsic ferroelectricity in hafnium oxide-based nano-ferroelectric devices10.1021/acs.nanolett.3c00085 ↗
43. Ultrathin HfAlO ferroelectrics enhancing electron transport and perovskite solar cell performance10.1557/s43578-021-00143-3 ↗
44. Trap characterization of atomic-layer-deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As10.1021/acsaelm.1c00565 ↗
45. Investigation of HfO2 Thin Films on Si by X-ray photoelectron spectroscopy, Rutherford backscattering, grazing incidence x-ray diffraction and variable angle spectroscopic ellipsometry10.3390/cryst8060248 ↗
46. Energy gap and band alignment for (HfO2)x(Al2O3)1–x on (100) Si10.1063/1.1492024 ↗
47. Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si10.1016/j.apsusc.2019.03.166 ↗
48. Pathways towards ferroelectricity in hafnia10.1103/PhysRevB.90.064111 ↗
49. Structure and electrical properties of Al-doped HfO(2) and ZrO(2) films grown via atomic layer deposition on Mo electrodes10.1021/am506525s ↗
50. PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs10.1016/j.ceramint.2023.11.286 ↗
51. Optical properties and electronic structure of amorphous Ge and Si10.1016/0025-5408(68)90023-8 ↗
52. Indium-free GZO thin films prepared using plasma-enhanced atomic layer deposition: toward thin film transistor application10.1039/D2TC03052G ↗
53. Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere10.1016/j.solmat.2023.112384 ↗
54. Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures10.1016/j.apsusc.2022.155099 ↗
55. Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing10.1016/j.surfcoat.2018.12.016 ↗
56. TiO2/Al2O3/TiO2 nanolaminated thin films for DRAM capacitor deposited by plasma-enhanced atomic layer deposition10.1149/1.2813881 ↗
57. Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors10.1063/1.4936376 ↗
58. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel10.1063/1.2783961 ↗
59. Z. Zhu, W. Cao, X. Huang, Z. Shi, D. Zhou, W. Xu, Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation, (2022).10.3390/mi13040617 ↗
60. Characterization of Al Incorporation into HfO2 dielectric by atomic layer deposition10.3390/mi10060361 ↗
61. Recent research for HZO-based ferroelectric memory towards in-memory computing applications10.3390/electronics12102297 ↗
62. Accurate defect density-of-state extraction based on back-channel surface potential measurement for solution-processed metal-oxide thin-film transistors10.1109/TED.2017.2664661 ↗
63. Steep subthreshold swing and enhanced illumination stability InGaZnO thin-film transistor by plasma oxidation on silicon nitride gate dielectric
64. Structural and electrical characteristics of high-performance stacked YbTixOy/PbZr0.53Ti0.47O3 gate dielectrics for InGaZnO thin-film transistors10.1016/j.jallcom.2020.155844 ↗