An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Review of Modern Field Effect Transistor Technologies for Scaling
2. Frontiers of silicon-on-insulator10.1063/1.1558223 ↗
3. Challenges for 3D IC integration: Bonding quality and thermal management
4. Integration of RF MEMS resonators and phononic crystals for high frequency applications with frequency-selective heat management and efficient power handling
5. Heat removal in silicon-on-insulator integrated circuits with graphene lateral heat spreaders10.1109/LED.2009.2034116 ↗
6. Fabrication of silicon-on-diamond substrate and low-loss optical waveguides10.1109/LPT.2011.2123089 ↗
7. Aluminum Nitride to Silicon Direct Bonding for an Alternative Silicon-On-Insulator Platform10.1021/acsami.1c09535 ↗
8. Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer10.1016/S0022-0248(02)01691-3 ↗
9. Self-healing narrowband filters via 3D heterogeneous integration of AlN MEMS and CMOS chips
10. Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications10.1016/j.mee.2019.03.009 ↗
11. GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices
12. Barrier-layer optimization for enhanced GaN-on-diamond device cooling10.1021/acsami.7b08961 ↗
13. Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation10.1557/jmr.2019.403 ↗
14. M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto, Atomic Diffusion Bonding using AlN films, in: 7th Int. Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) (2021) 6654. Doi: 10.1109/LTB-3D53950.2021.9598193.10.1109/LTB-3D53950.2021.9598193 ↗
15. Wafer bonding of SiC-AlN at room temperature for all-SiC capacitive pressure sensor10.3390/mi10100635 ↗
16. Room temperature bonding of aluminum nitride ceramic and semiconductor substrate10.1016/j.ceramint.2020.07.083 ↗
17. Room-temperature bonding of GaN and diamond via a SiC layer10.1080/26941112.2022.2145508 ↗
18. Diversity and feasibility of direct bonding: a survey of a dedicated optical technology10.1364/AO.33.001154 ↗
19. Adaptive lowerature covalent bonding of III-nitride thin films by extremely thin water interlayers10.1063/1.5095816 ↗
20. A Review of Hydrophilic Silicon Wafer Bonding10.1149/2.007403jss ↗
21. Low-temperature bonding of laser diode chips on silicon substrates using plasma activation of Au films10.1109/LPT.2007.908642 ↗
22. AlN-AlN Layer Bonding and Its Thermal Characteristics10.1149/2.0121507jss ↗
23. Y. Minoura, T. Ohki, N. Okamoto, A. Yamada, K. Makiyama, J. Kotani, S. Ozaki, M. Sato, N. Nakamura, Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs, Jpn. J. Appl. Phys. 59 (2020) SGGD03. Doi: 10.7567/1347-4065/ab5b68.10.7567/1347-4065/ab5b68 ↗
24. Comparison of argon and oxygen plasma treatments for ambient room-temperature wafer-scale Au–Au bonding using ultrathin Au films10.3390/mi10020119 ↗
25. GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off10.1016/j.apsusc.2017.04.247 ↗
26. Influence of ion-beam etching by Ar ions with an energy of 200–1000 eV on the roughness and sputtering yield of a single-crystal silicon surface10.1364/AO.455096 ↗
27. Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers10.1063/1.1621086 ↗
28. Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching10.1063/1.1688993 ↗
29. Effect of nanotopography in direct wafer bonding: Modeling and measurements10.1109/TSM.2005.845009 ↗
30. Adhesion and contact modeling and experiments in microelectromechanical systems including roughness effects10.1007/s00542-006-0169-0 ↗
31. Comparison of models for the contact of rough surfaces10.1016/0043-1648(86)90045-1 ↗
32. The effect of surface roughness on direct wafer bonding10.1063/1.369377 ↗
33. Surface topography and tribology10.1016/0041-2678(74)90119-5 ↗
34. Size effect of Young’s modulus in AlN thin layers10.1063/1.4896496 ↗
35. Reduction of residual stress in AlN thin films synthesized by magnetron sputtering technique10.1016/j.matchemphys.2017.07.072 ↗
36. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering10.1016/j.apsusc.2017.09.036 ↗
37. XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition10.1016/j.apsusc.2014.07.105 ↗
38. Chemical structure of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study10.1016/S0257-8972(99)00377-1 ↗
39. X-Ray photoelectron spectroscopic studies of the surface of sputter ion plated films10.1002/sia.740060603 ↗
40. The influence of temperature and time on the AlN powder hydrolysis reaction products10.1016/j.jeurceramsoc.2007.09.012 ↗
41. Hydrolysis behavior of aluminum nitride in various solutions10.1023/A:1004718329003 ↗
42. Thermal decomposition of grinding activated bayerite10.1016/j.materresbull.2008.06.031 ↗
43. Evolution of Temperature-Driven Interfacial Wettability and Surface Energy Properties on Hierarchically Structured Porous Superhydrophobic Pseudoboehmite Thin Films10.1021/acs.langmuir.0c00368 ↗
44. Hybrid silicon laser technology: A thermal perspective10.1109/JSTQE.2011.2109940 ↗
45. Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance