journal article·2025-02

Performance enhancement of MOCVD grown Zn-doped β-Ga2O3 Deep-Ultraviolet photodetectors on silicon substrates via TiN buffer layers

Anoop Kumar Singh, Jun-Hong Shen, Shiming Huang, Chao-Chun Yen, Hsin-Yu Chou, Wei-Hsiang Chiang, Bharath Kumar Yadlapalli, Chiung-Yi Huang, Po-Liu Liang, Ray-Hua Horng, Dong-Sing Wuu

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (34)

Show source-provided references
1. Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer10.1016/j.mssp.2020.104957 ↗
2. Ultrathin In2O3 nanosheets toward high responsivity and rejection ratio visible-blind UV photodetection
3. Non-ultrawide bandgap semiconductor GaSe nanobelts for sensitive deep ultraviolet light photodetector application
4. High-temperature performance of a GaSe nanosheet-based broadband photodetector10.1021/acsaelm.9b00770 ↗
5. Surface oxidation doping to enhance photogenerated carrier separation efficiency for ultrahigh gain indium selenide photodetector10.1021/acsphotonics.7b01030 ↗
6. High-performance single crystalline UV photodetectors of β-Ga2O310.1016/j.jallcom.2014.09.070 ↗
7. Deep-ultraviolet photodetection using single-crystalline β-Ga2O3/NiO heterojunctions10.1021/acsami.9b10626 ↗
8. Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere10.1016/j.jallcom.2020.155585 ↗
9. Recent advanced ultra-wide bandgap β-Ga2O3 material and device technologies
10. High performance of zero-power-consumption MOCVD-Grown β-Ga2O3-based solar-blind photodetectors with ultralow dark current and high-temperature functionalities10.1021/acsami.2c08511 ↗
11. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
12. Ultrawide-bandgap semiconductors: research opportunities and challenges10.1002/aelm.201600501 ↗
13. Thermal mismatch engineering induced freestanding and ultrathin Ga2O3 membrane for vertical electronics
14. Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) Heterointerface10.1016/j.jallcom.2019.153052 ↗
15. Low interface resistance in epitaxial β-Ga2O3 vertical power diodes on silicon (100) using TiN buffer10.1021/acsaelm.4c00258 ↗
16. Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes
17. First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics10.1016/j.mssp.2024.108475 ↗
18. Doping strategies for β-Ga2O3 based on high-throughput first-principles calculations
19. Unveiling structural and optical properties of Sn-doped β-Ga2O3: a correlation of experimental and theoretical observations10.1016/j.mseb.2024.117266 ↗
20. Enhanced responsivity of solar blind ultraviolet photodetector by PEALD deposited Zn-doped Ga2O3 thin films10.1109/TED.2023.3336853 ↗
21. Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn10.1088/1361-6463/aa5758 ↗
22. Solar blind photodetector based on epitaxial Zinc doped Ga2O3 thin film
23. Enhancement of crystalline quality and solar-blind photodetection characteristics of ∊-Ga2O3 films by introducing Zn impurity10.1039/D3TC03599A ↗
24. Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films10.1016/j.apsusc.2019.01.177 ↗
25. Bandgap tunable ZnGaO thin films grown by atomic layer deposition for high-performance ultraviolet photodetection10.1021/acsmaterialslett.3c00559 ↗
26. β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate10.1016/j.vacuum.2016.07.039 ↗
27. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors10.1016/j.apsusc.2019.05.328 ↗
28. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
29. Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector10.1016/j.matlet.2017.08.052 ↗
30. Solar-blind photodetector based on single crystal Ga2O3 film prepared by a unique ion-cutting process10.1021/acsaelm.0c00990 ↗
31. High-performance solar-blind ultraviolet photodetectors based on β-Ga2O3 thin films grown on p-Si(111) substrates with improved material quality via an AlN buffer layer introduced by metal-organic chemical vapor deposition10.1021/acsami.3c07876 ↗
32. Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
33. Monolithic epitaxial integration of β-Ga2O3 with 100 Si for deep ultraviolet photodetectors10.1021/acsaelm.1c01296 ↗
34. Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition10.1016/j.vacuum.2022.111019 ↗