journal article·2024-08

Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition

Yoon-Seo Kim, Hyunmin Hong, TaeHyun Hong, Su-Hwan Choi, Kwun-Bum Chung, Jin-Seong Park

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (38)

Show source-provided references
1. The era of hyper-scaling in electronics10.1038/s41928-018-0117-x ↗
2. Material characteristics and applications of transparent amorphous oxide semiconductors10.1038/asiamat.2010.5 ↗
3. Overview of electroceramic materials for oxide semiconductor thin film transistors10.1007/s10832-013-9858-0 ↗
4. Development of IGZO-TFT and creation of new devices using IGZO-TFT10.1002/j.2168-0159.2013.tb06329.x ↗
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
6. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2by Monolithic Stacking10.1109/TED.2022.3154693 ↗
7. Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide10.3390/electronics11010053 ↗
8. Scaled indium oxide transistors fabricated using atomic layer deposition10.1038/s41928-022-00718-w ↗
9. High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium-gallium oxide channel for back-end-of-line compatible transistor applications: cation combinatorial approach10.1021/acsami.2c13489 ↗
10. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook10.1088/2631-7990/acb46d ↗
11. Atomic layer deposition: an overview10.1021/cr900056b ↗
12. A brief review of atomic layer deposition: from fundamentals to applications10.1016/j.mattod.2014.04.026 ↗
13. Status and prospects of plasma-assisted atomic layer deposition10.1116/1.5088582 ↗
14. Plasma-Assisted atomic layer deposition: basics, opportunities, and challenges
15. Phase control of crystalline Ga2O3 films by plasma-enhanced atomic layer deposition10.1021/acs.chemmater.9b03926 ↗
16. The role of plasma in plasma-enhanced atomic layer deposition of crystalline films10.1116/6.0000145 ↗
17. Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties10.1002/aelm.202201208 ↗
18. Plasma-enhanced atomic layer deposition assisted low-temperature synthetic routes to rationally designed metastable c-Axis aligned hexagonal In-Zn-O10.1021/acs.chemmater.3c00894 ↗
19. Impact of bias stability for crystalline InZnO thin-film transistors10.1063/1.4985295 ↗
20. The electrical conduction properties of poly-crystalline indium-zinc-oxide film10.1063/1.4865504 ↗
21. Deep-level spectroscopy in high-resistivity materials10.1063/1.89929 ↗
22. Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy10.1063/5.0050111 ↗
23. Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review10.1021/acs.chemmater.8b02878 ↗
24. Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer10.1109/TED.2019.2899586 ↗
25. The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films
26. Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator10.1016/j.jallcom.2021.162308 ↗
27. Approaches for 3D integration using plasma-enhanced atomic-layer-deposited atomically-ordered InGaZnO transistors with ultra-high mobility
28. Impact of annealing temperature on atomic layer deposited In-Ga-Zn-O thin-film transistors10.1021/acsaelm.2c00079 ↗
29. Effects of RF sputtering parameters and film composition on C-axis aligned crystalline (CAAC) IGZO films10.1002/sdtp.10262 ↗
30. Recent progress of the single crystal growth of homologous (InGaO3)m(ZnO)n10.1039/D2CE00439A ↗
31. Threshold voltage engineering in a-IGZO thin film transistors through active layer doping and thickness control10.1063/1.5093881 ↗
32. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping*10.1109/JDT.2009.2034559 ↗
33. P. Kagan, C. R.; Andry, Thin-Film Transistors (1st ed.), 2003. Doi: 10.1201/9780203911778.10.1201/9780203911778 ↗
34. Impact of N2O plasma reactant on PEALD-SiO2Insulator for remarkably reliable ALD-oxide semiconductor TFTs10.1109/TED.2022.3169110 ↗
35. Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy10.1038/s41598-023-40162-0 ↗
36. Electronic defects in amorphous oxide semiconductors: a review
37. Impact of tandem IGZO/ZnON TFT with energy-band aligned structure10.1063/5.0023837 ↗
38. Hydrogen behavior under X-ray irradiation for a-IGZO thin film transistors10.1063/1.5132372 ↗