Substrate-tuned dielectric screening effect on optical properties of monolayer MoSe2
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OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Quantum Dots Synthesis And Properties
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References (65)
Show source-provided references
1. Graphene and two-dimensional materials for silicon technology10.1038/s41586-019-1573-9 ↗
2. Electronics based on two-dimensional materials10.1038/nnano.2014.207 ↗
3. Van der Waals integration before and beyond two-dimensional materials10.1038/s41586-019-1013-x ↗
4. Two-dimensional materials for halide perovskite-based optoelectronic devices10.1002/adma.201605448 ↗
5. Effects of confinement and environment on the electronic structure and exciton binding energy of MoS 2 from first principles10.1103/PhysRevB.86.241201 ↗
6. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals10.1038/ncomms2018 ↗
7. Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics10.1038/s41467-021-21139-x ↗
8. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions10.1038/natrevmats.2017.70 ↗
9. Exciton Hall effect in monolayer MoS210.1038/nmat4996 ↗
10. Exciton binding energy in bulk MoS2: A reassessment10.1063/1.4945047 ↗
11. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
12. Photoluminescence from chemically exfoliated MoS210.1021/nl201874w ↗
13. Binding energies of exciton complexes in transition metal dichalcogenide monolayers and effect of dielectric environment10.1103/PhysRevB.92.205418 ↗
14. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS 210.1103/PhysRevB.85.205302 ↗
15. Neutral and charged inter-valley biexcitons in monolayer MoSe210.1038/ncomms15552 ↗
16. Tunable exciton-optomechanical coupling in suspended monolayer MoSe210.1021/acs.nanolett.0c05089 ↗
17. Anomalous room-temperature photoluminescence from nanostrained MoSe2 monolayers10.1021/acsphotonics.1c00640 ↗
18. Dense network of one-dimensional midgap metallic modes in monolayer MoSe 2 and their spatial undulations10.1103/PhysRevLett.113.066105 ↗
19. High phase-purity 1T′-MoS2-and 1T′-MoSe2-layered crystals10.1038/s41557-018-0035-6 ↗
20. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe210.1038/nnano.2013.277 ↗
21. Chemical vapor deposition growth of monolayer MoSe 2 nanosheets10.1007/s12274-014-0417-z ↗
22. Chemical vapor deposition growth of crystalline monolayer MoSe210.1021/nn501175k ↗
23. Enhanced photoluminescence of monolayer MoSe2 in a double resonant plasmonic nanocavity with fano resonance and mode matching10.1002/lpor.202100199 ↗
24. Pressure-dependent light emission of charged and neutral excitons in monolayer MoSe210.1021/acs.jpclett.7b01374 ↗
25. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor10.1038/nmat4061 ↗
26. Environmental screening effects in 2D materials: renormalization of the bandgap, electronic structure, and optical spectra of few-layer black phosphorus10.1021/acs.nanolett.7b01365 ↗
27. Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer10.1038/s41467-017-02286-6 ↗
28. Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
29. Modification of optical properties in monolayer WS2 on dielectric substrates by coulomb engineering10.1021/acs.jpcc.9b04514 ↗
30. Substrate induced optical anisotropy in monolayer MoS210.1021/acs.jpcc.0c02715 ↗
31. Layer-dependent dielectric permittivity of topological insulator Bi2Se3 thin films10.1016/j.apsusc.2019.144822 ↗
32. Layer-dependent dielectric and optical properties of centimeter-scale 2D WSe 2: evolution from a single layer to few layers10.1039/C9NR04270A ↗
33. Layer-dependent dielectric function of wafer-scale 2D MoS210.1002/adom.201801250 ↗
34. Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2, Mo S e 2, WS 2, and WS e 210.1103/PhysRevB.90.205422 ↗
35. Temperature dependence of the dielectric function of monolayer MoSe210.1038/s41598-018-21508-5 ↗
36. The crystal structure of MoSe210.1107/S0365110X6300311X ↗
37. Ab-initio simulations of materials using VASP: Density-functional theory and beyond10.1002/jcc.21057 ↗
38. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗
39. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS210.1021/nl302584w ↗
40. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates10.1021/nl5000906 ↗
41. Controllable growth of monolayer MoS2 and MoSe2 crystals using three-temperature-zone furnace
42. Exciton–phonon coupling strength in single-layer MoSe2 at room temperature10.1038/s41467-021-20895-0 ↗
43. 2-Dimensional transition metal dichalcogenides with tunable direct band gaps: MoS2 (1–x) Se2x monolayers10.1002/adma.201304389 ↗
44. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection10.1021/nn503287m ↗
45. Optimal broadband Mueller matrix ellipsometer using multi-waveplates with flexibly oriented axes10.1088/2040-8978/18/2/025702 ↗
46. Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates10.1088/2053-1583/aaa4ca ↗
47. High dielectric constant oxides10.1051/epjap:2004206 ↗
48. Ab initio calculation of the macroscopic dielectric constant in silicon10.1103/PhysRevB.33.7017 ↗
49. Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz10.1186/1556-276X-9-418 ↗
50. CVD synthesis of large-area, highly crystalline MoSe 2 atomic layers on diverse substrates and application to photodetectors10.1039/C4NR02311K ↗
51. Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions10.1038/s41598-020-58164-7 ↗
52. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer10.1038/srep20890 ↗
53. Broadband optical properties of monolayer and bulk MoS2, npj 2D
54. Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe210.1088/0022-3719/12/5/017 ↗
55. Optical properties of pseudomorphic Ge1− xSnx (x= 0 to 0.11) alloys on Ge (001)10.1116/1.4901254 ↗
56. Fujiwara · 2018
57. Influence of the substrate material on the optical properties of tungsten diselenide monolayers10.1088/2053-1583/aa5b21 ↗
58. Emergence of highly linearly polarized interlayer exciton emission in MoSe2/WSe2 heterobilayers with transfer-induced layer corrugation10.1021/acsnano.0c01146 ↗
59. Strain and spin-orbit coupling engineering in twisted WS2/graphene heterobilayer10.3390/nano11112921 ↗
60. Image charge effect on two-dimensional excitons in an inorganic-organic quantum-well crystal10.1103/PhysRevB.71.045312 ↗
61. Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains10.1021/nn301320r ↗
62. Peter · 2010
63. Cardona · 2005
64. Experimental and theoretical optical properties of methylammonium lead halide perovskites10.1039/C5NR05435D ↗
65. Electrical control of neutral and charged excitons in a monolayer semiconductor10.1038/ncomms2498 ↗