Anodic oxidation of Al/Ge/Al multilayer films
Source abstract
Abstract
Abstract We report the effect of an intermediate germanium layer on the process of anodic oxidation of an Al/Ge/Al multilayer film in oxalic acid solution and the morphology of the formed oxide membrane. The anodization of the upper and lower aluminum layers is performed in accordance with the classical mechanism of formation of porous anodic alumina and does not depend on the germanium layer. Whereas the anodization of the germanium layer is particularly sensitive to its structure and conductivity. In the case of amorphous germanium with low intrinsic conductivity, anodic dissolution of the layer is observed. A layer of porous germanium oxide is formed to occur from crystal germanium with high conductivity.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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1. Nanoporous alumina as templates for multifunctional applications10.1063/1.4893546 ↗
2. Fundamentals of mesostructuring through evaporation-induced self-assembly10.1002/adfm.200305036 ↗
3. Synthesis of oriented films of mesoporous silica on mica10.1038/379703a0 ↗
4. Continuous formation of supported cubic and hexagonal mesoporous films by sol–gel dip-coating10.1038/38699 ↗
5. Preparation of narrow photonic bandgaps located in the near infrared region and their applications in ethanol gas sensing10.1039/c3tc30782d ↗
6. Nanoporous anodic alumina photonic crystals: fundamentals, developments and perspectives10.1039/C6TC05555A ↗
7. Porous anodic alumina formed by anodization of aluminum alloy (AA1050) and high purity aluminum10.1016/j.electacta.2009.12.054 ↗
8. The growth of anodic oxide films on germanium10.1149/1.2427690 ↗
9. Kinetics of anodic dissolution of germanium10.1149/1.2425936 ↗
10. The Evolution of Silicon Wafer Cleaning Technology10.1149/1.2086825 ↗
11. QUALX2.0: a qualitative phase analysis software using the freely available database POW_COD10.1107/S1600576715002319 ↗
12. The influence of the porous structure of anodic alumina on the formation and properties of germanium nanostructures10.1088/2053-1591/3/1/015902 ↗
13. Crystallization kinetics of amorphous germanium
14. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization10.1016/j.sse.2009.08.002 ↗
15. Crystallization of amorphous germanium in an AlXa-Ge bilayer film deposited on a SiO2 substrate10.1063/1.1359149 ↗
16. Anodic oxide films on aluminum10.1021/cr60259a005 ↗
17. High resolution XPS study of oxide layers grown on Ge substrates10.1016/S0039-6028(02)02354-3 ↗
18. Native Oxidation Growth on Ge(111) and (100) Surfaces10.1143/JJAP.50.04DA12 ↗
19. Surface oxidation states of germanium10.1016/0039-6028(86)90767-3 ↗
20. Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties10.1016/j.tsf.2013.10.084 ↗
21. Optical properties of Ge nanostructures embedded into porous alumina matrices10.1088/2053-1591/3/4/045901 ↗
22. Progress in nano-engineered anodic aluminum oxide membrane development10.3390/ma4030487 ↗
23. Role of electrode reaction kinetics in self-ordering of porous anodic alumina10.1016/j.electacta.2017.04.140 ↗
24. Porous anodic alumina: fabrication, characterization and applications10.1016/S0040-6090(96)09440-0 ↗
25. The anode behavior of germanium in aqueous solutions10.1149/1.2430289 ↗