journal article·2024-05

Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition

Sonja Cremer, Lennart Voß, Nils Braun, Niklas Wolff, Lorenz Kienle, Andriy Lotnyk

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (59)

Show source-provided references
1. Reversible electrical switching phenomena in disordered structures10.1103/PhysRevLett.21.1450 ↗
2. Platform storage performance with 3D XPoint Technology10.1109/JPROC.2017.2731776 ↗
3. Phase-change materials for rewriteable data storage10.1038/nmat2009 ↗
4. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues10.1088/1361-6641/aa7c25 ↗
5. Phase change thin films for non-volatile memory applications10.1039/C9NA00366E ↗
6. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage10.1186/s11671-020-03299-9 ↗
7. Resistance Drift Suppression Utilizing GeTe/Sb 2 Te 3 Superlattice-Like Phase-Change Materials10.1002/aelm.201900781 ↗
8. Ni-doped GST materials for high speed phase change memory applications10.1016/j.materresbull.2015.01.016 ↗
9. One order of magnitude faster phase change at reduced power in Ti-Sb-Te10.1038/ncomms5086 ↗
10. Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction10.1021/nn4000176 ↗
11. Three Resistance States Achieved by Nanocrystalline Decomposition in Ge-Ga-Sb Compound for Multilevel Phase Change Memory10.1002/aelm.202100164 ↗
12. Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization10.1002/adfm.201803380 ↗
13. On Some Unique Specificities of Ge-Rich GeSbTe Phase-Change Material Alloys for Nonvolatile Embedded-Memory Applications10.1002/pssr.202000471 ↗
14. F. Rao, K. Ding, Y. Zhou, Y. Zheng, M. Xia, S. Lv, Z. Song, S. Feng, I. Ronneberger, R. Mazzarello, W. Zhang, E. Ma, Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing, Science (New York, N.Y.) 358 (2017) 1423-1427. https://doi.org/10.1126/science.aao3212.10.1126/science.aao3212 ↗
15. Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping10.1016/j.actamat.2022.118211 ↗
16. Fabrication of stable multi-level resistance states in a Nb-doped Ge 2 Sb 2 Te 5 device
17. Superlattice-like structure for phase change optical recording10.1063/1.1454222 ↗
18. Interfacial phase-change memory10.1038/nnano.2011.96 ↗
19. Phase change random access memory cell with superlattice-like structure10.1063/1.2181191 ↗
20. Crystalline amorphous semiconductor superlattice10.1103/PhysRevLett.100.136101 ↗
21. Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures10.1088/0957-4484/22/25/254019 ↗
22. An artificial synapse by superlattice-like phase-change material for low-power brain-inspired computing*10.1088/1674-1056/ab892a ↗
23. Multilevel-Cell Phase-Change Memory: A Viable Technology, IEEE10.1109/JETCAS.2016.2528598 ↗
24. Epitaxial layered Sb 2 Te 3 thin films for memory and neuromorphic applications10.1088/2053-1583/ac1e71 ↗
25. Effects of Intermixing in Sb2Te3/Ge1+xTe Multilayers on the Thermoelectric Power Factor10.1021/acsami.3c00869 ↗
26. Double-layered GeTe/Sb2Te heterostructures for enhancing thermoelectric performance10.1016/j.scriptamat.2022.114848 ↗
27. Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states10.1039/C7NR03495D ↗
28. Pair potential modeling of atomic rearrangement in GeTe-Sb 2 Te 3 superlattice via first-principles calculations10.1063/1.4977241 ↗
29. Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb 2 Te 3 Superlattices10.1002/admi.201300027 ↗
30. Modeling of switching mechanism in GeSbTe chalcogenide superlattices10.1038/srep12612 ↗
31. Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices10.1038/srep22353 ↗
32. Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices10.1002/smll.201704514 ↗
33. Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices10.1007/s12274-017-1785-y ↗
34. Temperature dependent evolution of local structure in chalcogenide-based superlattices10.1016/j.apsusc.2020.147959 ↗
35. Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices10.1039/C5NR04530D ↗
36. Atomic stacking and van-der-Waals bonding in GeTe-Sb 2 Te 3 superlattices10.1557/jmr.2016.334 ↗
37. Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing10.1063/1.5088068 ↗
38. Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures10.1038/s41598-020-76885-7 ↗
39. Design of Multilevel Storage Medium through Sb 2 Te 3 /Ga 2 Sb 3 Phase-Change Heterostructure10.1149/2162-8777/acbbec ↗
40. Intermixing suppression through the interface in GeTe/Sb 2 Te 3 superlattice10.35848/1882-0786/ab9710 ↗
41. Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te410.1103/PhysRevLett.100.016402 ↗
42. Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties10.1016/j.matdes.2020.109392 ↗
43. In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides10.1016/j.ultramic.2008.05.012 ↗
44. A Reference Guide of Electron Energy Loss Spectra Covering All Stable Elements
45. Structural characterization of Bi 2 Te 3 and Sb 2 Te 3 as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques10.1063/1.4892441 ↗
46. Direct observation of metastable face-centered cubic Sb2Te3 crystal10.1007/s12274-016-1221-8 ↗
47. Rapid-phase transitions of GeTe-Sb 2 Te 3 pseudobinary amorphous thin films for an optical disk memory10.1063/1.348620 ↗
48. Phase-Change Characteristics and Thermal Stability of GeTe/Sb 2 Te 3 Nanocomposite Multilayer Films10.1143/JJAP.48.115503 ↗
49. Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory10.1063/1.2778737 ↗
50. Enhanced crystallization of GeTe from an Sb 2 Te 3 template10.1063/1.3675635 ↗
51. “Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization10.1021/acsami.0c07973 ↗
52. Extremely long period-stacking structure in the Sb-Te binary system10.1107/S0108768105017714 ↗
53. Klug · 1974 · 992
54. Vacancy-mediated electronic localization and phase transition in cubic Sb2Te310.1016/j.mssp.2021.106052 ↗
55. Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films10.1016/j.actamat.2015.12.010 ↗
56. Stability enhancement of the metastable cubic Sb2Te3 in supperlattice-like films10.1016/j.matlet.2019.02.042 ↗
57. Layer-Switching Mechanisms in Sb 2 Te 310.1002/pssr.201900320 ↗
58. High Speed Overwritable Phase Change Optical Disk Material10.7567/JJAPS.26S4.61 ↗
59. Phase diagram of the ternary system Ge-Sb-Te10.1016/0040-6031(86)85051-1 ↗