journal article·2023-05

Rectification behavior of type-Ⅱ CuGa2O4/β-Ga2O3 heterojunction diode

Jianjun Shi, Hongwei Liang, Xiaochuan Xia, Jun Liu, Qasim Abbas

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (52)

Show source-provided references
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates10.1063/1.3674287 ↗
2. A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ·cm2 on-resistance10.7567/1882-0786/ab2e86 ↗
3. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped beta-Ga2O3 MOSFETs10.1109/LED.2016.2568139 ↗
4. Vertical beta-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance10.1002/pssa.201900497 ↗
5. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application10.1186/s11671-018-2712-1 ↗
6. Band alignment analysis of CuGaO2/β-Ga2O3 heterojunction and application to deep-UV photodetector10.1016/j.apsusc.2021.151010 ↗
7. 50 mm diameter Sn-doped (0 0 1) β-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air10.1016/j.jcrysgro.2020.125778 ↗
8. Optimization of Gas Ambient for High Quality β-Ga2O3 Single Crystals Grown by the Optical Floating Zone Technique10.1149/2.0261907jss ↗
9. Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method10.1149/2.0021702jss ↗
10. Daniel, Splith, Stefan, Müller, Florian, Schmidt, Holger, von, Wenckstern, Johan, Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition, physica status solidi (a), 211 (2013) 40-47.10.1002/pssa.201330088 ↗
11. Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition10.1002/pssa.201330088 ↗
12. Temperature-Dependent Electrical Characteristics of β-Ga2O3 Diodes with W Schottky Contacts up to 500°C10.1149/2.0011907jss ↗
13. Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes10.3390/mi12030259 ↗
14. Influence of metal choice on (010) β-Ga2O3 Schottky diode properties10.1063/1.4983610 ↗
15. Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals
16. Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination10.7567/1347-4065/ab4f90 ↗
17. Leakage Current Reduction in beta-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment10.1109/LED.2020.3013918 ↗
18. Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O310.1063/1.5079423 ↗
19. High-temperature (350 °C) oxidized iridium Schottky contacts on β-Ga2O3
20. Schottky Barrier Height Engineering In β-Ga2O3 Using SiO2 Interlayer Dielectric10.1109/JEDS.2020.2974260 ↗
21. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
22. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate10.1016/j.rinp.2018.04.042 ↗
23. 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers10.1149/2.0241805jss ↗
24. Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/R-on, R-sp of up to 0.95 GW/cm(2)10.1109/LED.2019.2953559 ↗
25. N.S. Madani Labed, Mohamed Labed, Afak Meftah, Sinsu Kyoung, Hojoong Kim and You Seung Rim, Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering, Journal of Physics D: Applied Physics, 54 (2021) 115102 (115108pp).10.1088/1361-6463/abce2c ↗
26. Design of a beta-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown10.1109/TED.2020.3025268 ↗
27. Schottky barrier height of Au on the transparent semiconducting oxide beta-Ga2O310.1063/1.4755770 ↗
28. On the barrier lowering and ideality factor of ideal al/gaas schottky diodes10.1016/0038-1101(91)90103-6 ↗
29. Intrinsic energy band alignment of functional oxides10.1002/pssr.201409034 ↗
30. Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer10.1016/j.apsusc.2020.147276 ↗
31. Rectifying Effect of the Sr3Al2O6/Ga2O3 Heterojunction, Physica Status Solidi a-Applications and Materials
32. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode10.1063/5.0010052 ↗
33. Akihiko Furukawa, Mikio Yamamuka, Yuki Takiguchi, and Shinsuke Miyajima, Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
34. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy10.1063/1.5009032 ↗
35. Influence of inverse spinel structured CuGa2O4 on microwave dielectric properties of normal spinel ZnGa2O4 ceramics10.1111/jace.15264 ↗
36. Synthesis of spinel-type CuGa2O4 nanoparticles as a sensitive non-enzymatic electrochemical sensor for hydrogen peroxide and glucose detection10.1016/j.jelechem.2021.115100 ↗
37. Visible light active pristine and Fe3+ doped CuGa2O4 spinel photocatalysts for solar hydrogen production10.1016/j.ijhydene.2008.03.018 ↗
38. Thermodynamic stability of copper gallates determined from the E.M.F. method10.1016/j.jssc.2015.09.004 ↗
39. Aerosol-Assisted Chemical Vapour Deposition of a Copper Gallium Oxide Spinel10.1002/cplu.201300289 ↗
40. Band structure calculation and crystal field induced electronic properties illustration for spinel CuGa2O4*10.1016/j.commatsci.2022.111579 ↗
41. Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O310.1007/s10853-019-03666-7 ↗
42. Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au10.1007/s10854-019-00669-7 ↗
43. Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O310.1088/1674-4926/40/1/012805 ↗
44. Healing of Surface States and Point Defects of Single-Crystal beta-Ga2O3 Epilayers10.1149/2.012204jss ↗
45. Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes10.1063/1.4824296 ↗
46. SnO/beta-Ga2O3 vertical pn heterojunction diodes10.1063/5.0031442 ↗
47. Hydrothermal synthesis and photocatalytic properties of CuGaO2/ZnO hexagonal platelet hybrids10.1016/j.materresbull.2019.01.011 ↗
48. Precise determination of the valence-band edge in X-ray photoemission spectra-application to measurement of semiconductor interface potentials10.1103/PhysRevLett.44.1620 ↗
49. Forward Current Conduction Mechanism of Mechanically Exfoliated β-Ga2O3/GaN pn Heterojunction Diode10.1149/2162-8777/ab754e ↗
50. Interface recombination current in type II heterostructure bipolar diodes10.1021/am504454g ↗
51. P. Schlupp, D. Splith, H. von Wenckstern, M. Grundmann, Electrical Properties of Vertical p-NiO/n-Ga2O3 and p-ZnCo2O4 /n-Ga2O3 pn-Heterodiodes, physica status solidi (a), 216 (2019) 1800729.10.1002/pssa.201800729 ↗
52. Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions10.1109/TED.2020.3001249 ↗