journal article·2022-04

Emergence of multiple negative differential transconductance from a WSe2 double lateral homojunction platform

Hyeonje Son, Juho Lee, Tae Hyung Kim, Seunghuck Choi, Haeju Choi, Yong-Hoon Kim, Sungjoo Lee

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OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Molecular Junctions and Nanostructures

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References (26)

Show source-provided references
1. M.D. Pickett, R. Stanley Williams, Phase transitions enable computational universality in neuristor-based cellular automata, Nanotechnology, 24 (2013) 384002, 10.1088/0957-4484/24/38/384002.10.1088/0957-4484/24/38/384002 ↗
2. Recent Advances on Multivalued Logic Gates: A Materials Perspective10.1002/advs.202004216 ↗
3. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing10.1038/nature23307 ↗
4. New Phenomenon in Narrow Germanium p-n Junctions10.1103/PhysRev.109.603 ↗
5. Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature10.1063/1.95574 ↗
6. Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure
7. Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD, in
8. Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface10.1021/acsnano.9b03342 ↗
9. Multifunctional high-performance van der Waals heterostructures10.1038/nnano.2017.208 ↗
10. Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits10.1039/D0NH00163E ↗
11. A. García, N. Papior, A. Akhtar, E. Artacho, V. Blum, E. Bosoni, P. Brandimarte, M. Brandbyge, J.I. Cerdá, F. Corsetti, R. Cuadrado, V. Dikan, J. Ferrer, J. Gale, P. García-Fernández, V.M. García-Suárez, S. García, G. Huhs, S. Illera, R. Korytár, P. Koval, I. Lebedeva, L. Lin, P. López-Tarifa, S.G. Mayo, S. Mohr, P. Ordejón, A. Postnikov, Y. Pouillon, M. Pruneda, R. Robles, D. Sánchez-Portal, J.M. Soler, R. Ullah, V.W.-z. Yu, J. Junquera, Siesta: Recent developments and applications, J. Chem. Phys., 152 (2020) 204108, 10.1063/5.0005077.10.1063/5.0005077 ↗
12. Ground State of the Electron Gas by a Stochastic Method10.1103/PhysRevLett.45.566 ↗
13. Self-interaction correction to density-functional approximations for many-electron systems10.1103/PhysRevB.23.5048 ↗
14. Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain10.1103/PhysRevB.88.195420 ↗
15. Two-dimensional limit of exchange-correlation energy functional approximations10.1103/PhysRevB.61.5202 ↗
16. Efficient pseudopotentials for plane-wave calculations10.1103/PhysRevB.43.1993 ↗
17. Multi-Space Excitation as an Alternative to the Landauer Picture for Nonequilibrium Quantum Transport10.1002/advs.202001038 ↗
18. Quasi-Fermi level splitting in nanoscale junctions from ab initio10.1073/pnas.1921273117 ↗
19. T.H. Kim, J. Lee, R.G. Lee, and Y.-H. Kim, arXiv:2109.11302 [cond-mat.mes-hall].
20. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices10.1021/acs.nanolett.6b02704 ↗
21. P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor10.1002/adma.201505154 ↗
22. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides10.1038/srep01608 ↗
23. A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique10.1002/adma.201600032 ↗
24. Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules10.1021/acs.chemmater.7b01998 ↗
25. O. Breitenstein, P. Altermatt, K. Ramspeck, M.A. Green, J. Zhao, A. Schenk, Interpretation of the Commonly Observed I-V Characteristics of C-SI Cells Having Ideality Factor Larger Than Two, in: 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, pp. 879-884.10.1109/WCPEC.2006.279597 ↗
26. Multiscale Analysis for Field-Effect Penetration through Two-Dimensional Materials10.1021/acs.nanolett.6b01876 ↗