journal article·2023-02

Excellent spin-filtering and giant tunneling magnetoresistance in a dual-electrode van der Waals magnetic tunnel junction based on ferromagnetic CrSe2

Jindi Feng, Kunpeng Li, Mingkun Zheng, Wancheng Zhang, Yong Liu, Dengjing Wang, Zhenhua Zhang, Chao Zuo, Rui Xiong, Zhihong Lu

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (72)

Show source-provided references
1. Spintronics: a spin-based electronics vision for the future10.1126/science.1065389 ↗
2. Spintronics based random access memory: a review10.1016/j.mattod.2017.07.007 ↗
3. Ferrimagnetic spintronics10.1038/s41563-021-01139-4 ↗
4. Spin-based logic in semiconductors for reconfigurable large-scale circuits10.1038/nature05833 ↗
5. Magnetic tunnel junctions10.1016/S1369-7021(06)71693-5 ↗
6. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature10.1038/ncomms1564 ↗
7. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction10.1038/nmat2804 ↗
8. Magnetoresistive random access memory10.1109/JPROC.2016.2590142 ↗
9. Scaling magnetic tunnel junction down to single-digit nanometers challenges and prospects10.1063/5.0004434 ↗
10. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction10.1016/0304-8853(95)90001-2 ↗
11. 80% Tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers10.1063/1.2696590 ↗
12. Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches10.1103/PhysRevB.63.054416 ↗
13. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers10.1038/nmat1256 ↗
14. Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic L10-FePt electrodes10.1109/TMAG.2008.2003059 ↗
15. Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature10.1063/1.2976435 ↗
16. Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene10.1063/1.4765348 ↗
17. Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions10.1103/PhysRevB.72.140404 ↗
18. Atomic and electronic structure of the CoFeB/MgO interface from first principles10.1063/1.2360189 ↗
19. Future hard disk drive systems10.1016/j.jmmm.2008.07.027 ↗
20. Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers10.1007/s12274-014-0627-4 ↗
21. Spin tunnelling phenomena in single-crystal magnetic tunnel junction systems10.1088/0953-8984/19/16/165201 ↗
22. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
23. Large-scale fabrication of boron nitride nanosheets and their utilization in polymeric composites with improved thermal and mechanical properties10.1002/adma.200900323 ↗
24. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets10.1021/ar5002846 ↗
25. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets10.1038/nchem.1589 ↗
26. Epitaxial growth of two-dimensional stanene10.1038/nmat4384 ↗
27. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus10.1038/ncomms5475 ↗
28. Experimental realization of two-dimensional boron sheets10.1038/nchem.2491 ↗
29. Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride10.1103/PhysRevB.80.035408 ↗
30. Ni(111)|Graphene|h-BN junctions as ideal spin injectors10.1103/PhysRevB.84.153406 ↗
31. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers10.1063/1.4943516 ↗
32. Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe, Co magnetic tunnel junctions10.1063/5.0049792 ↗
33. Large magnetoresistance in a Co/MoS2/Graphene/MoS2/Co magnetic tunnel junction10.1103/PhysRevB.103.165407 ↗
34. Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions10.1103/PhysRevB.90.041401 ↗
35. Large magnetoresistance in planar Fe/MoS2/Fe tunnel junction10.1016/j.commatsci.2016.06.005 ↗
36. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit10.1038/nature22391 ↗
37. Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy
38. Direct observation of van der Waals stacking-dependent interlayer magnetism10.1126/science.aav1937 ↗
39. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates10.1038/s41565-018-0063-9 ↗
40. In-plane magnetic domains and neel-like domain walls in thin flakes of the ́room temperature CrTe2 van der Waals ferromagnet10.1021/acsami.0c07017 ↗
41. Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit10.1021/acs.nanolett.8b00683 ↗
42. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals10.1038/nature22060 ↗
43. Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes10.1021/acs.nanolett.9b01506 ↗
44. Ultrathin scattering spin filter and magnetic tunnel junction implemented by ferromagnetic 2D van der Waals material10.1002/aelm.201900968 ↗
45. Large magnetoresistance and efficient spin injection in ferromagnet/graphene/Fe3GeTe2 van der Waals magnetic tunnel junctions10.1021/acs.jpcc.1c03602 ↗
46. Tunneling spin valves based on Fe3GeTe2/h-BN/Fe3GeTe2 van der Waals heterostructures10.1021/acs.nanolett.8b01278 ↗
47. Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions10.1039/D0NR07290G ↗
48. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures10.1126/science.aar4851 ↗
49. Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions10.1039/D0CP02534H ↗
50. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI310.1038/s41467-018-04953-8 ↗
51. Giant tunneling magnetoresistance in van der Waals magnetic tunnel junctions formed by interlayer antiferromagnetic bilayer CoBr210.1103/PhysRevB.103.134437 ↗
52. Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X=Br, I) monolayers10.1039/C8NR06255B ↗
53. Role of quantum confinement and interlayer coupling in CrI3-graphene magnetic tunnel junctions10.1103/PhysRevB.101.195439 ↗
54. Spin filtering in CrI3 tunnel junctions10.1021/acsami.9b01942 ↗
55. Recent development of two-dimensional transition metal dichalcogenides and their applications10.1016/j.mattod.2016.10.002 ↗
56. Synthesis of ultrathin metallic MTe2 (M=V, Nb, Ta) single-crystalline nanoplates10.1002/adma.201801043 ↗
57. Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order10.1038/s41563-021-00927-2 ↗
58. Large tunneling magnetoresistance and low resistance-area product in CrSe2/NiCl2/CrSe2 van der Waals magnetic tunnel junction10.1063/5.0098687 ↗
59. Ab initio molecular dynamics for liquid metals10.1103/PhysRevB.47.558 ↗
60. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
61. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
62. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
63. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗
64. Voltage-controllable colossal magnetocrystalline anisotropy in single-layer transition metal dichalcogenides10.1103/PhysRevB.96.041410 ↗
65. Atomistix Toolkit version 2015.1
66. Density-functional method for nonequilibrium electron transport10.1103/PhysRevB.65.165401 ↗
67. CrSe2, a new layered dichalcogenide10.1016/0378-4363(80)90226-0 ↗
68. Characterization of few-layer 1T-MoSe2 and its superior performance in the visible-light induced hydrogen evolution reaction10.1063/1.4892976 ↗
69. Epitaxial van der Waals contacts between transition-metal dichalcogenide monolayer polymorphs10.1021/acs.nanolett.8b04869 ↗
70. Robust room-temperature NO2 sensors from exfoliated 2D few-layered CVD-grown bulk Tungsten di-selenide (2H-WSe2)10.1021/acsami.0c17924 ↗
71. Role of metal-oxide interface in determining the spin polarization of magnetic tunnel junctions10.1126/science.286.5439.507 ↗
72. Spin tunnelling phenomena in single-crystal magnetic tunnel junction systems10.1088/0953-8984/19/16/165201 ↗