Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer
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OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · ZnO doping and properties
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References (44)
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1. Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n -Ga 2 O 3 / p -CuSCN Core-Shell Microwire Heterojunction10.1021/acsami.9b11012 ↗
2. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga 2 O 3 /NSTO Heterojunction10.1021/acsami.6b13771 ↗
3. High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 pn heterojunction10.1016/j.mtphys.2020.100335 ↗
4. Demonstration of β-(Al x Ga 1–x) 2 O 3 /Ga 2 O 3 double heterostructure field effect transistors10.1063/1.5037095 ↗
5. Metal oxide heterojunctions for high performance solution grown oxide thin film transistors10.1016/j.apsusc.2020.146774 ↗
6. Heterostructure WSe 2 −Ga 2 O 3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics10.1021/acsami.8b07030 ↗
7. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed10.1007/s12274-021-3346-7 ↗
8. High-Performance β-Ga 2 O 3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process10.1109/LED.2020.3032290 ↗
9. High Performance β-Ga 2 O 3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process10.1109/LED.2021.3061509 ↗
10. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)10.1063/1.4746751 ↗
11. Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures10.1063/1.3431391 ↗
12. Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics10.1007/s11664-020-08261-0 ↗
13. In situ heteroepitaxial construction and transport properties of lattice-matched α -Ir 2 O 3 / α -Ga 2 O 3 p-n heterojunction10.1063/5.0047710 ↗
14. Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor10.1021/acsami.7b04374 ↗
15. Theoretical Studies of Electronic and Optical Behaviors of All-Inorganic CsPbI3 and Two-Dimensional MS2 (M = Mo, W) Heterostructures10.1021/acs.jpcc.8b12350 ↗
16. Modulating the electronic properties of monolayer MoS 2 through heterostructure with monolayer gray arsenic10.1016/j.matdes.2016.02.017 ↗
17. Stacking and electric field effects in atomically thin layers of GaN
18. Beneficial Role of Organolead Halide Perovskite CH 3 NH 3 PbI 3 /SnO 2 Interface: Theoretical and Experimental Study10.1002/admi.201900400 ↗
19. Surface functionalization modulates the structural and optoelectronic properties of two-dimensional Ga2O310.1016/j.mtphys.2020.100192 ↗
20. Unusual Electronic and Optical Properties of Two-Dimensional Ga 2 O 3 Predicted by Density Functional Theory10.1021/acs.jpcc.8b08650 ↗
21. Recent progress in the growth of β-Ga2O3 for power electronics applications10.1016/j.mssp.2017.10.040 ↗
22. Gallium oxide solar-blind ultraviolet photodetectors: A review10.1039/C9TC02055A ↗
23. Impurity level properties in transition metal doped α-Ga 2 O 3 for optoelectronic applications10.1088/1361-6641/ac0c8c ↗
24. Multilevel oxygen-vacancy conductive filaments in β-Ga 2 O 3 based resistive random access memory10.1039/D0CP06239A ↗
25. p -GaSe/ n -Ga 2 O 3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity10.1021/acsphotonics.1c00015 ↗
26. Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga 2 O 3 /NiO Heterojunctions10.1021/acsami.9b10626 ↗
27. Construction of GaN/Ga 2 O 3 p–n junction for an extremely high responsivity self-powered UV photodetector10.1039/C7TC03746E ↗
28. Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response10.1016/j.jallcom.2019.153532 ↗
29. D. Guo, Y. Su, H. Shi, P. Li, N. Zhao, J. Ye, S. Wang, A. Liu, Z. Chen, C. Li, W. Tang, Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga 2 O 3 pn Junction, ACS Nano. 12 (2018) 12827–12835.10.1021/acsnano.8b07997 ↗
30. Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction10.1016/j.sna.2015.06.011 ↗
31. Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors10.1016/j.jcrysgro.2020.125511 ↗
32. J.-W. Yu, Y.-R. Wu, J.-J. Huang, L.-H. Peng, 75GHz Ga2O3/GaN Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors, in: 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), IEEE, 2010: pp. 1–4.10.1109/CSICS.2010.5619673 ↗
33. Band alignment at β -Ga 2 O 3 /III-N (III = Al, Ga) interfaces through hybrid functional calculations10.1063/5.0020442 ↗
34. Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study10.1016/j.mee.2019.111039 ↗
35. Software News and Updates Gabedit — A Graphical User Interface for Computational Chemistry Softwares10.1002/jcc.21600 ↗
36. The Perdew–Burke–Ernzerhof exchange-correlation functional applied to the G2–1 test set using a plane-wave basis set10.1063/1.1926272 ↗
37. Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors10.1103/PhysRevB.80.115205 ↗
38. Optical Absorption and Photoconductivity in the Band Edge of β-Ga2O3, Physical
39. Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O310.1016/j.matdes.2019.108197 ↗
40. GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids10.1103/PhysRevB.93.085431 ↗
41. Electronic structures of polar and nonpolar GaN surfaces10.1016/S0921-5107(01)00749-8 ↗
42. Accurate surface band bending determination on Ga-polar n -type GaN films by fitting x-ray valence band photoemission spectrum10.1063/1.5120324 ↗
43. Electronic surface and dielectric interface states on GaN and AlGaN10.1116/1.4807904 ↗
44. Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride10.1016/j.apsusc.2020.146225 ↗