journal article·2022-05

Density functional theory study on the selective capping of cobalt on copper interconnect

Khabib Khumaini, Romel Hidayat, Tirta Rona Mayangsari, Tanzia Chowdhury, Hye-Lee Kim, Sang-Ick Lee, Won-Jun Lee

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (73)

Show source-provided references
1. Y.-L. Cheng, C.-Y. Lee, Y.-L. Huang, Copper metal for semiconductor interconnects, in: Noble and Precious Metals - Properties, Nanoscale Effects and Appications., IntechOpen, 2018, pp. 215–250. https://doi.org/10.5772/intechopen.72396.10.5772/intechopen.72396 ↗
2. P. Besser, A. Marathe, L. Zhao, M. Herrick, C. Capasso, H. Kawasaki, Optimizing the electromigration performance of copper interconnects, in: Int. Electron Devices Meet. 2000. Tech. Dig. (Cat. No.00CH37138), 2000, pp. 119–121. https://doi.org/10.1109/IEDM.2000.904272.10.1109/IEDM.2000.904272 ↗
3. H. Sato, S. Ogawa, Mechanism of dependency of EM properties on linewidth in dual damascene copper interconnects, in: Proc. IEEE 2001 Int. Interconnect Technol. Conf. (Cat. No.01EX461), IEEE, 2001: pp. 186–188. https://doi.org/10.1109/IITC.2001.930055.10.1109/IITC.2001.930055 ↗
4. Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness10.1109/LED.2011.2108260 ↗
5. Reduced electromigration of Cu wires by surface coating10.1063/1.1504491 ↗
6. In situ Co/SiC(N, H) capping layers for Cu/Low-k interconnects10.1109/LED.2012.2183850 ↗
7. Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects10.1016/j.mee.2005.07.061 ↗
8. Method for capping copper in semiconductor devices
9. T. Ko, C.L. Chang, S.W. Chou, M.W. Lin, C.J. Lin, C.H. Shih, H.W. Su, M.H. Tsai, W.S. Shue, M.S. Liang, High performance/reliability Cu interconnect with selective CoWP cap, in: 2003 Symp. VLSI Technol. Dig. Tech. Pap. (IEEE Cat. No.03CH37407), Japan Soc. Applied Phys, 2003, pp. 109–110. https://doi.org/10.1109/VLSIT.2003.1221110.10.1109/VLSIT.2003.1221110 ↗
10. Reduced Cu interface diffusion by CoWP surface coating10.1016/S0167-9317(03)00286-7 ↗
11. Electroless deposited cobalt-tungsten-boron capping barrier metal on damascene copper interconnection10.1149/1.1860512 ↗
12. M. Tagami, N. Furutake, N. Inoue, E. Nakazawa, K. Arita, Y. Hayashi, Highly-reliable molecular-pore-stack (MPS)-SiOCH/Cu interconnects with CoWB metal-cap films, in:Proc. 2009 IEEE Int. Interconnect Technol. Conf., IEEE, 2009, pp. 11–13. https://doi.org/10.1109/IITC.2009.5090327.10.1109/IITC.2009.5090327 ↗
13. Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications10.1149/1.3339450 ↗
14. C.-C. Yang, D. Edelstein, K. Chanda, P. Wang, C.K. Hu, E. Liniger, S. Cohen, J.R. Lloyd, B. Li, F. McFeely, R. Wisnieff, T. Ishizaka, F. Cerio, K. Suzuki, J. Rullan, A. Selsley, M. Jomen, Integration and reliability of CVD Ru Cap for Cu/Low-k development, in: Proc. 2009 IEEE Int. Interconnect Technol. Conf., IEEE, 2009, pp. 255–257. https://doi.org/10.1109/IITC.2009.5090402.10.1109/IITC.2009.5090402 ↗
15. Selective chemical vapor deposition of manganese self-aligned capping layer for Cu interconnections in microelectronics10.1149/1.3364799 ↗
16. C.-C. Yang, F. Chen, B. Li, H. Shobha, S. Nguyen, A. Grill, W. Ye, J. AuBuchon, M. Shek, D. Edelstein, In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects, in: 2012 IEEE Int. Interconnect Technol. Conf., IEEE, 2012, pp. 1–3. https://doi.org/10.1109/IITC.2012.6251568.10.1109/IITC.2012.6251568 ↗
17. A.H. Simon, T. Bolom, C. Niu, F.H. Baumann, C.-K. Hu, C. Parks, J. Nag, H. Kim, J.Y. Lee, C.-C. Yang, S. Nguyen, H.K. Shobha, T. Nogami, S. Guggilla, J. Ren, D. Sabens, J.F. AuBuchon, Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects, in: 2013 IEEE Int. Reliab. Phys. Symp. (IRPS), IEEE, 2013, pp. 1–6. https://doi.org/10.1109/IRPS.2013.6532002.10.1109/IRPS.2013.6532002 ↗
18. D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C.K. Hu, C. Parks, E. Adams, J. Burnham, A.H. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, J. Ren, K. Shah, Advanced metal and dielectric barrier cap films for Cu low k interconnects, in: IEEE Int. Interconnect Technol. Conf., IEEE, 2014, pp. 185–188. https://doi.org/10.1109/IITC.2014.6831866.10.1109/IITC.2014.6831866 ↗
19. Area-selective chemical vapor deposition of Co for Cu capping layer10.1016/j.cap.2015.10.013 ↗
20. Relationship between interfacial adhesion and electromigration in Cu metallization10.1063/1.1532942 ↗
21. Chemical vapor deposition of cobalt nitride and its application as an adhesion-enhancing layer for advanced copper interconnects10.1149/2.005205jss ↗
22. Advanced Interconnects: materials, processing, and reliability10.1149/2.0271501jss ↗
23. Selective electroless deposition of cobalt using amino-terminated SAMs10.1039/C9TC00145J ↗
24. Characterization of selectively deposited cobalt capping layers: selectivity and electromigration resistance10.1109/LED.2010.2048298 ↗
25. Chemically capping copper with cobalt10.1016/j.mee.2009.08.017 ↗
26. OMCVD of cobalt and cobalt silicide10.1016/0022-0248(91)90054-9 ↗
27. Substrate selectivity of (tBu-Allyl)Co(CO)3 during thermal atomic layer deposition of cobalt10.1021/cm2029189 ↗
28. High quality area-selective atomic layer deposition Co using ammonia gas as a aeactant10.1149/1.3248002 ↗
29. Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid10.1063/1.4968848 ↗
30. Preliminary growth of metallic co films by thermal atomic layer deposition using RCpCo(CO)2 and alkylamine precursors10.1016/j.matlet.2021.131605 ↗
31. Editors’ choice—review—cobalt thin films: trends in processing technologies and emerging applications10.1149/2.0051902jss ↗
32. Ruthenium complexes as precursors for chemical vapor-deposition (CVD)10.1039/C4RA04701J ↗
33. Characteristics of cobalt films deposited by metal organic chemical vapor deposition method using dicobalt hexacarbonyl tert-butylacetylene10.1143/JJAP.47.5396 ↗
34. Calculations of product selectivity in electrochemical CO2 reduction10.1021/acscatal.7b03308 ↗
35. Theoretical study on the reaction mechanism and selectivity of acetylene semi-hydrogenation on Ni-Sn intermetallic catalysts10.1039/C8CP06032K ↗
36. Dominant kinetic pathways of graphene growth in chemical vapor deposition: the role of hydrogen10.1021/acs.jpcc.7b09622 ↗
37. Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition10.1021/acs.chemmater.8b03165 ↗
38. The Curtin-Hammett principle and the Winstein-Holness equation: new definition and recent extensions to classical concepts10.1021/ed063p42 ↗
39. Area-selective deposition: fundamentals, applications, and future outlook10.1021/acs.chemmater.0c00722 ↗
40. A.J. Adamczyk, A.C. Cooper, M.-S. Kim, S. V. Ivanov, Leveraging atomistic modeling during precursor design for cobalt film deposition, in: 13th International Symposium on Process Systems Engineering (PSE 2018), Elsevier, 2018: pp. 157–162. https://doi.org/10.1016/B978-0-444-64241-7.50021-5.10.1016/B978-0-444-64241-7.50021-5 ↗
41. Atomic layer deposition of Co using N2∕H2 plasma as a reactant10.1149/2.077111jes ↗
42. Atomic layer deposition of cobalt using H2-, N2-, and NH3-based plasmas: on the role of the Co-reactant10.1021/acs.jpcc.8b06342 ↗
43. (Invited) Selective atomic layer deposition of cobalt for back end of line10.1149/08003.0029ecst ↗
44. Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition10.1039/C9TC04091A ↗
45. Insight into selective surface reactions of dimethylamino-trimethylsilane for area-selective deposition of metal, nitride, and oxide10.1021/acs.jpcc.9b11270 ↗
46. Area-selective deposition of ruthenium by area-dependent surface diffusion10.1021/acs.chemmater.0c02588 ↗
47. The kinetics and mechanism of hydrogen adsorption and hydrogen-deuterium equilibration on the copper surface10.1246/bcsj.47.1852 ↗
48. Mechanism of methanol synthesis on Cu through CO2 and CO hydrogenation10.1021/cs200055d ↗
49. Effect of the components’ interface on the synthesis of methanol over Cu/ZnO from CO2/H2: a microkinetic analysis based on DFT + U calculations10.1039/C4CP05518G ↗
50. Surface chemistry of copper metal and copper oxide atomic layer deposition from copper(II) acetylacetonate: a combined first-principles and reactive molecular dynamics study10.1039/C5CP03707G ↗
51. Classification of processes for the atomic layer deposition of metals based on mechanistic information from density functional theory calculations10.1063/1.4975085 ↗
52. Copper reduction and atomic layer deposition by oxidative decomposition of formate by hydrazine10.1039/C4RA07003H ↗
53. Selectivity mechanisms in low pressure selective epitaxial silicon growth10.1149/1.2054839 ↗
54. Hydroxyl groups on silica surface10.1016/0022-3093(75)90095-2 ↗
55. The surface chemistry of amorphous silica. Zhuravlev model10.1016/S0927-7757(00)00556-2 ↗
56. Evolution mechanism of surface hydroxyl groups of silica during heat treatment10.1016/j.apsusc.2020.145766 ↗
57. An all-electron numerical method for solving the local density functional for polyatomic molecules10.1063/1.458452 ↗
58. From molecules to solids with the DMol3 approach10.1063/1.1316015 ↗
59. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
60. V.A. Basiuk, O.V. Prezhdo, E.V. Basiuk, Thermal smearing in DFT calculations: How small is really small? A case of La and Lu atoms adsorbed on graphene, Mater. Today Commun. 25 (2020) 101595 (1–9). https://doi.org/10.1016/j.mtcomm.2020.101595.10.1016/j.mtcomm.2020.101595 ↗
61. Azobenzene at coinage metal surfaces: Role of dispersive van der Waals interactions10.1103/PhysRevB.80.205414 ↗
62. A generalized synchronous transit method for transition state location10.1016/S0927-0256(03)00111-3 ↗
63. A DFT study on the C-H bond dissociation enthalpies of haloalkanes: correlation between the bond dissociation enthalpies and activation energies for hydrogen abstraction10.1021/jp001815x ↗
64. Bond dissociation energies of organic molecules10.1021/ar020230d ↗
65. Atomic layer deposition of metals: precursors and film growth10.1063/1.5087759 ↗
66. Role of axially coordinated surface sites for electrochemically controlled carbon monoxide adsorption on single crystal copper electrodes10.1039/c0cp02064h ↗
67. DFT Study on the hydrogenation of CO2 to methanol on Ho-Doped Cu(211) surface10.1021/acs.jpcc.0c04170 ↗
68. Atom-resolved imaging of dynamic shape changes in supported copper nanocrystals10.1126/science.1069325 ↗
69. Barrier for the H2CO→H2 +CO reaction: a discrepancy between high-level electronic structure calculations and experiment10.1063/1.481788 ↗
70. Understanding chemical and physical mechanisms in atomic layer deposition10.1063/1.5133390 ↗
71. Unraveling the selective etching mechanism of silicon nitride over silicon dioxide by phosphoric acid: first-principles study10.1016/j.apsusc.2021.149376 ↗
72. Reaction kinetics and mechanism on metal single crystal surfaces10.1016/S0360-0564(08)60119-4 ↗
73. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗