Effect of the interface on UV–vis–IR photodetection performance of PbS/ZnO nanocomposite photocatalysts

Abstract Two PbS/ZnO nanocomposites with the same Pb/Zn molar ratio of 1:12 and different PbS/ZnO interface were prepared by depositing PbS nanocrystals on nano ZnO with the reaction between Pb(NO 3 ) 2 and Na 2 S through changing the sequence of adding Pb(NO 3 ) 2 and Na 2 S to the nano ZnO suspension: (A) first adding Pb(NO 3 ) 2 followed by adding Na 2 S (denoted PbS/ZnO-A); (B) first adding Na 2 S followed by adding Pb(NO 3 ) 2 (denoted PbS/ZnO-B). The PbS/ZnO nanocomposites are characterized by XRD, BET, Raman, TEM, XPS, and UV–vis–IR. The characterizations indicate that PbS/ZnO-A has an interface of PbS nanocrystal closely contacted to ZnO nanocrystal while PbS/ZnO-B has an interface of a disordered layer between PbS nanocrystal and ZnO nanocrystal. It is found for the first time that the PbS/ZnO interface plays an important role in their photodetection performance. PbS/ZnO-A exhibits much higher photoresponse current and lower rise and recovery time than both PbS/ZnO-B and a mixture of nano PbS and ZnO with the same Pb/Zn molar ratio as PbS/ZnO-A for visible and near-infrared photodetection. PL and the impedance measurement in dark and irradiation reveal that the superior photodetection performance of PbS/ZnO-A over PbS/ZnO-B is attributed to its lower e–h recombination and migration resistance under the irradiation of visible and infrared light due to its very good PbS/ZnO interface of PbS nanocrystals closely attached ZnO nanocrystals, through which photogenerated electrons inject efficiently from the conduction band of PbS to that of ZnO. In contrast, the defect sites in the disordered layer between PbS nanocrystal and ZnO nanocrystal for PbS/ZnO-B act as e–h recombination centers, significantly decreasing the e–h separation efficiency.