Thermal stability of AlN films prepared by ion beam assisted deposition
Source abstract
Abstract
Abstract The thermal stability of AlN films deposited by ion beam assisted deposition was performed at 600 °C for 192 h under air ambient. The composition, morphology and optical properties were studied by X-ray photoelectron spectrometer, transmission electron microscopy, scanning electron microscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The results show that the deposited film is polycrystalline, smooth, dense and homogenous. The oxidation of grain boundary takes place due to the element diffusion in the polycrystalline material. Oxidation produces amorphous oxide layers on the surface of film. As annealing time increases, surface roughness and diffuse reflection increase. Annealing has little influence on refractive index and extinction coefficient.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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1. Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature films deposited via pulsed laser deposition technique at room temperature10.1016/j.apsusc.2008.06.190 ↗
2. The characterization of aluminum nitride thin films prepared by dual ion beam sputtering10.1016/j.surfcoat.2005.07.046 ↗
3. AlN thin films prepared by ion beam induced chemical vapour deposition10.1016/S0040-6090(97)00602-0 ↗
4. Effect of substrate bias on AlN thin film preparation in shielded reactive vacuum arc deposition10.1016/S0040-6090(00)01673-4 ↗
5. Fabrication of SOI structure with AlN film as buried insulator by ion-cut process10.1016/S0169-4332(02)00864-4 ↗
6. Fabrication and properties of Al2O3 and AlN coatings for fusion reactor blanket by sputtering method10.1016/S0257-8972(98)00486-1 ↗
7. Synthesis and microstructural characterisation of reactive RF magnetron sputtering AlN films for surface acoustic wave filters10.1016/j.diamond.2003.11.064 ↗
8. High performance W–AlN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering10.1016/j.solmat.2003.08.021 ↗
9. The optical properties of sputtered composite of Al–AlN10.1016/j.solmat.2005.11.006 ↗
10. Oxidation of aluminium nitride substrates10.1007/BF00351319 ↗
11. Oxidation behavior of AlN substrate at low temperature
12. Oxidation kinetics of aluminum nitride10.1111/j.1151-2916.1990.tb05167.x ↗
13. Oxidation kinetics of AIN powder10.1023/A:1006512904173 ↗
14. Oxidation behavior of AlN films at high temperature under controlled atmosphere10.1016/j.jeurceramsoc.2007.07.015 ↗
15. Study of the oxidation of aluminum nitride coatings at high temperature10.1016/0040-6090(94)06480-6 ↗
16. Thermally oxidized AlN thin films for device insulators10.1063/1.118980 ↗
17. Effects of oxidation temperature on the capacitance–voltage characteristics of oxidized AlN films on Si10.1063/1.120510 ↗
18. Study of dry oxidation of aluminum nitride on Si(111) substrate grown by metalorganic chemical vapor deposition10.1142/S0218625X03005463 ↗
19. Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection10.1016/S0257-8972(98)00527-1 ↗
20. AlN formation by direct nitrogen implantation using a DECR plasma10.1016/S0257-8972(99)00558-7 ↗
21. Aluminium–aluminium nitride cermet films: preparation by co-sputtering and microstructure10.1016/S0257-8972(97)00527-6 ↗
22. Dielectric properties of AlN thin films formed by ion beam enhanced deposition10.1016/S0167-577X(03)00377-X ↗
23. Nitrogen bonding in aluminum oxynitride films10.1016/j.apsusc.2010.02.004 ↗
24. Kinetics and initial stages of oxidation of aluminum nitride: thermogravimetric analysis and X-ray photoelectron spectroscopy study10.1116/1.574765 ↗
25. Thermal oxidation of single crystal aluminum nitride: a high resolution transmission electron microscopy study10.1016/j.matlet.2007.12.023 ↗
26. Thermal stability of plasma-nitrided aluminum oxide films on Si10.1063/1.1638629 ↗
27. Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications10.1016/0040-6090(95)08194-1 ↗
28. Characterisation of aluminium oxynitride gas barrier films10.1016/S0040-6090(01)00836-7 ↗
29. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition10.1016/j.apsusc.2014.08.174 ↗
30. Optical properties of high transmittance aluminum oxynitride thin films for spectral range from near ultraviolet to visible10.1007/s10043-009-0076-6 ↗
31. Statistical evaluation of refractive index, growth rate, hardness and Young's modulus of aluminium oxynitride films10.1016/S0040-6090(99)00564-7 ↗
32. Band-gap determination from diffuse reflectance measurements of semiconductor films, and application to photoelectrochemical water-splitting10.1016/j.solmat.2007.05.005 ↗
33. Modified Kubelka–Munk model for calculation of the reflectance of coatings with optically-rough surfaces10.1088/0022-3727/39/16/008 ↗