Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD

Abstract Epitaxial In 2 O 3 films have been deposited on Y-stabilized ZrO 2 (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450–750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In 2 O 3 (1 0 0)||YSZ(1 0 0) with In 2 O 3 [0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In 2 O 3 film deposited at 650 °C is as high as 66.5 cm 2 V −1 s −1 with carrier concentration of 1.5 × 10 19 cm −3 and resistivity of 6.3 × 10 −3 Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.