journal article·2014-08Open access

Atomic Layer Deposition of oriented nickel titanate (NiTiO3)

Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen

Abstract

Abstract The combination of the two well behaved binary oxide ALD processes, NiO (Ni(acac) 2 + O 3 ) and (TiO 2 (TiO i Pr) 4 + H 2 O), provide excellent means for depositing thin films of Ni x Ti 1− x O y with highly controllable stoichiometry. In particular, stoichiometric NiTiO 3 was obtained for a 1:1 molar pulsing ratio of NiO:TiO 2 . An ALD window was observed between 175 and 275 °C for this composition, within which the growth rate remained unchanged at ∼43 pm/subcycle. The measured refractive index was 2.42 and a direct band gap of 2.27 eV was found. The described process yielded smooth (0.4–0.9 nm RMS roughness), crystalline films of NiTiO 3 as-deposited on Si (1 0 0) substrates, with a strained (0 0 1) orientation. Annealing at 650 °C for 15 min relaxed the strain and improved the crystallinity.
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OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Electronic and Structural Properties of Oxides

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